Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP65R190CFD7AAKSA1

IPP65R190CFD7AAKSA1

MOSFET N-CH 650V 14A TO220-3

Infineon Technologies
2,739 -

RFQ

IPP65R190CFD7AAKSA1

Технические

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) - 190mOhm @ 6.4A, 10V 4.5V @ 320µA 28 nC @ 10 V ±20V 1291 pF @ 400 V - 77W (Tc) -40°C ~ 150°C (TJ) Through Hole
EPC2023

EPC2023

GANFET N-CH 30V 60A DIE

EPC
2,619 -

RFQ

EPC2023

Технические

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 30 V 60A (Ta) - 1.3mOhm @ 40A, 5V 2.5V @ 20mA - - 2300 pF @ 15 V - - - Surface Mount
IXFP22N65X2M

IXFP22N65X2M

MOSFET N-CH 650V 22A TO220

IXYS
2,879 -

RFQ

IXFP22N65X2M

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 22A (Tc) 10V 145mOhm @ 11A, 10V 5V @ 1.5mA 37 nC @ 10 V ±30V 2190 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK090A65Z,S4X

TK090A65Z,S4X

MOSFET N-CH 650V 30A TO220SIS

Toshiba Semiconductor and Storage
2,537 -

RFQ

TK090A65Z,S4X

Технические

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Ta) 10V 90mOhm @ 15A, 10V 4V @ 1.27mA 47 nC @ 10 V ±30V 2780 pF @ 300 V - 45W (Tc) 150°C Through Hole
IMBG65R163M1HXTMA1

IMBG65R163M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,048 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
SIHK065N60E-T1-GE3

SIHK065N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,629 -

RFQ

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 68mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2946 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUK3015

SUK3015

MOSFET WITH ZENER DIODE 300V/15A

Sanken
2,757 -

RFQ

SUK3015

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 15A (Ta) 10V 150mOhm @ 7A, 10V 2.5V @ 1mA - ±25V 1800 pF @ 10 V - 89W (Tc) 150°C (TJ) Surface Mount
FCPF290N80

FCPF290N80

MOSFET N-CH 800V 17A TO220F

onsemi
2,999 -

RFQ

FCPF290N80

Технические

Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8440

FDP8440

MOSFET N-CH 40V 100A TO-220

onsemi
23,680 -

RFQ

FDP8440

Технические

Bulk,Tube * Last Time Buy - - - - - - - - - - - - - -
SIHK075N60EF-T1GE3

SIHK075N60EF-T1GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,062 -

RFQ

SIHK075N60EF-T1GE3

Технические

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 71mOhm @ 15A, 10V 5V @ 250µA 72 nC @ 10 V ±30V 2954 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHG24N80AEF-GE3

SIHG24N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
3,110 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 195mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±30V 1889 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP18N65X2

IXFP18N65X2

MOSFET N-CH 650V 18A TO220AB

IXYS
2,553 -

RFQ

IXFP18N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 200mOhm @ 9A, 10V 5V @ 1.5mA 29 nC @ 10 V ±30V 1520 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190CFDFKSA1

IPW65R190CFDFKSA1

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies
3,434 -

RFQ

IPW65R190CFDFKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 730µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R190CFDFKSA2

IPW65R190CFDFKSA2

MOSFET N-CH 650V 17.5A TO247-3

Infineon Technologies
3,510 -

RFQ

IPW65R190CFDFKSA2

Технические

Tube CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 17.5A (Tc) 10V 190mOhm @ 7.3A, 10V 4.5V @ 700µA 68 nC @ 10 V ±20V 1850 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPT039N15N5ATMA1

IPT039N15N5ATMA1

OPTIMOS 5 POWER MOSFET

Infineon Technologies
3,249 -

RFQ

IPT039N15N5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 21A (Ta), 190A (Tc) 8V, 10V 3.9mOhm @ 50A, 10V 4.6V @ 257µA 98 nC @ 10 V ±20V 7700 pF @ 75 V - 3.8W (Ta), 319W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP15N60C3XKSA1

SPP15N60C3XKSA1

MOSFET N-CH 650V 15A TO220-3

Infineon Technologies
3,713 -

RFQ

SPP15N60C3XKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1660 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP42N25P

IXTP42N25P

MOSFET N-CH 250V 42A TO220AB

IXYS
2,358 -

RFQ

IXTP42N25P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 42A (Tc) 10V 84mOhm @ 500mA, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2300 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTBS2D7N06M7

NTBS2D7N06M7

MOSFET N-CH 60V 110A D2PAK-3

onsemi
2,821 -

RFQ

NTBS2D7N06M7

Технические

Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 10V 2.7mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6655 pF @ 30 V - 176W (Tj) -55°C ~ 175°C (TJ) Surface Mount
IPT013N08NM5LFATMA1

IPT013N08NM5LFATMA1

TRENCH 40<-<100V PG-HSOF-8

Infineon Technologies
2,963 -

RFQ

IPT013N08NM5LFATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 333A (Tc) 10V 1.3mOhm @ 150A, 10V 4.1V @ 250µA 158 nC @ 10 V ±20V 820 pF @ 40 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1N120P

IXTA1N120P

MOSFET N-CH 1200V 1A TO263

IXYS
2,352 -

RFQ

IXTA1N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 4.5V @ 50µA 17.6 nC @ 10 V ±20V 550 pF @ 25 V - 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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