Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQW44N65EF-GE3

SQW44N65EF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,578 -

RFQ

SQW44N65EF-GE3

Технические

Bulk Automotive, AEC-Q101, E Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 73mOhm @ 22A, 10V 4V @ 250µA 266 nC @ 10 V ±30V 5858 pF @ 100 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
LSIC1MO170E0750

LSIC1MO170E0750

SICFET N-CH 1700V 750OHM TO247-3

Littelfuse Inc.
2,511 -

RFQ

LSIC1MO170E0750

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1700 V 6.2A (Tc) 20V 1Ohm @ 2A, 20V 4V @ 1mA 13 nC @ 20 V +22V, -6V 200 pF @ 1000 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH230N075T2

IXFH230N075T2

MOSFET N-CH 75V 230A TO247AD

IXYS
2,821 -

RFQ

IXFH230N075T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG65R072M1HXTMA1

IMBG65R072M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
2,574 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
APT14F100B

APT14F100B

MOSFET N-CH 1000V 14A TO247

Microchip Technology
2,407 -

RFQ

APT14F100B

Технические

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 980mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLZ24NS

AUIRLZ24NS

MOSFET N-CH 55V 18A D2PAK

Infineon Technologies
2,532 -

RFQ

AUIRLZ24NS

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH072N60F-F085

FCH072N60F-F085

MOSFET N-CH 600V 52A TO247-3

onsemi
3,479 -

RFQ

FCH072N60F-F085

Технические

Tube,Tube Automotive, AEC-Q101, SuperFET® II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 72mOhm @ 26A, 10V 5V @ 250µA 210 nC @ 10 V ±20V 6330 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH190N65F-F085

FCH190N65F-F085

MOSFET N-CH 650V 20.6A TO247-3

onsemi
3,799 -

RFQ

FCH190N65F-F085

Технические

Tube,Tube,Tube Automotive, AEC-Q101, SuperFET® II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 27A, 10V 5V @ 250µA 82 nC @ 10 V ±20V 3181 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSM6K411TU(TE85L,F

SSM6K411TU(TE85L,F

MOSFET N-CH 20V 10A UF6

Toshiba Semiconductor and Storage
2,560 -

RFQ

SSM6K411TU(TE85L,F

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSIV Active N-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 12mOhm @ 7A, 4.5V 1.2V @ 1mA 9.4 nC @ 4.5 V ±12V 710 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
DMP2006UFG-13

DMP2006UFG-13

MOSFET P-CH 20V 17.5A POWERDI

Diodes Incorporated
3,404 -

RFQ

DMP2006UFG-13

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 17.5A (Ta), 40A (Tc) 1.5V, 4.5V 5.5mOhm @ 15A, 4.5V 1V @ 250µA 200 nC @ 10 V ±10V 7500 pF @ 10 V - 2.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP3065LVT-13

DMP3065LVT-13

MOSFET P-CH 30V 5.1A TSOT-26

Diodes Incorporated
3,338 -

RFQ

DMP3065LVT-13

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 42mOhm @ 4.9A, 10V 2.1V @ 250µA 20 nC @ 10 V ±20V 880 pF @ 15 V - 1.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
STH290N4F6-2

STH290N4F6-2

MOSFET N-CH 60V H2PAK-2

STMicroelectronics
2,478 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
IPB65R041CFD7ATMA1

IPB65R041CFD7ATMA1

HIGH POWER_NEW

Infineon Technologies
2,311 -

RFQ

IPB65R041CFD7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R090CFD7XKSA1

IPW65R090CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies
2,335 -

RFQ

IPW65R090CFD7XKSA1

Технические

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 90mOhm @ 12.5A, 10V 4.5V @ 630µA 53 nC @ 10 V ±20V 2513 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
STH290N4F6-6

STH290N4F6-6

MOSFET N-CH 60V H2PAK-6

STMicroelectronics
2,375 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
FDPF2D3N10C

FDPF2D3N10C

MOSFET N-CH 100V 222A TO220F

onsemi
2,743 -

RFQ

FDPF2D3N10C

Технические

Bulk,Tube,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
STL3P6F6

STL3P6F6

MOSFET P-CH 60V 3A POWERFLAT

STMicroelectronics
2,443 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
STI18N60M2

STI18N60M2

MOSFET N-CH 600V 9A I2PAK

STMicroelectronics
3,090 -

RFQ

Tube * Obsolete - - - - - - - - - - - - - -
IRF100P219AKMA1

IRF100P219AKMA1

MOSFET N-CH 100V TO247AC

Infineon Technologies
2,708 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 203A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 278µA 210 nC @ 10 V ±20V 12020 pF @ 50 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP4110

AUIRFP4110

MOSFET N-CH 100V 120A TO247AC

Infineon Technologies
3,311 -

RFQ

AUIRFP4110

Технические

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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