Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPW65R041CFD7XKSA1

IPW65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
3,893 -

RFQ

IPW65R041CFD7XKSA1

Технические

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT140N10P

IXFT140N10P

MOSFET N-CH 100V 140A TO268

IXYS
2,653 -

RFQ

IXFT140N10P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 140A (Tc) 10V 11mOhm @ 70A, 10V 5V @ 4mA 155 nC @ 10 V ±20V 4700 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STWA75N65DM6

STWA75N65DM6

N-CHANNEL 650 V, 33 MOHM TYP., 7

STMicroelectronics
3,484 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 36mOhm @ 37.5A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5700 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT30M85BVRG

APT30M85BVRG

MOSFET N-CH 300V 40A TO247

Microchip Technology
3,940 -

RFQ

APT30M85BVRG

Технические

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 300 V 40A (Tc) 10V 85mOhm @ 500mA, 10V 4V @ 1mA 195 nC @ 10 V ±30V 4950 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH26N65X2

IXFH26N65X2

IXFH26N65X2

IXYS
2,020 -

RFQ

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 26A (Tc) 10V 130mOhm @ 500mA, 10V 5V @ 2.5mA 45 nC @ 10 V ±30V 2450 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ150N15P

IXTQ150N15P

MOSFET N-CH 150V 150A TO3P

IXYS
3,530 -

RFQ

IXTQ150N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 13mOhm @ 500mA, 10V 5V @ 250µA 190 nC @ 10 V ±20V 5800 pF @ 25 V - 714W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH6N120P

IXFH6N120P

MOSFET N-CH 1200V 6A TO247AD

IXYS
2,278 -

RFQ

IXFH6N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 6A (Tc) 10V 2.4Ohm @ 500mA, 10V 5V @ 1mA 92 nC @ 10 V ±30V 2830 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
STWA65N65DM2AG

STWA65N65DM2AG

MOSFET N-CH 650V 60A TO247

STMicroelectronics
3,330 -

RFQ

STWA65N65DM2AG

Технические

Tube MDmesh™ DM2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 50mOhm @ 30A, 10V 5V @ 250µA 120 nC @ 10 V ±25V 5500 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH94N20X4

IXTH94N20X4

MOSFET N-CH 200V 94A X4 TO-247

IXYS
3,816 -

RFQ

IXTH94N20X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVBG080N120SC1

NVBG080N120SC1

SICFET N-CH 1200V 30A D2PAK-7

onsemi
3,089 -

RFQ

NVBG080N120SC1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 110mOhm @ 20A, 20V 4.3V @ 5mA 56 nC @ 20 V +25V, -15V 1154 pF @ 800 V - 179W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IMBG65R039M1HXTMA1

IMBG65R039M1HXTMA1

SILICON CARBIDE MOSFET PG-TO263-

Infineon Technologies
3,997 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
STP12N120K5

STP12N120K5

MOSFET N-CH 1200V 12A TO220

STMicroelectronics
2,721 -

RFQ

STP12N120K5

Технические

Tube MDmesh™ K5 Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 690mOhm @ 6A, 10V 5V @ 100µA 44.2 nC @ 10 V ±30V 1370 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA130N15X3

IXFA130N15X3

MOSFET N-CH 150V 130A TO263AA

IXYS
2,282 -

RFQ

IXFA130N15X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVHL082N65S3F

NVHL082N65S3F

MOSFET N-CH 650V 40A TO247-3

onsemi
1,350 -

RFQ

NVHL082N65S3F

Технические

Bulk,Tube Automotive, AEC-Q101, SuperFET® III, FRFET® Active N-Channel MOSFET (Metal Oxide) 650 V 40A (Tc) 10V 82mOhm @ 20A, 10V 5V @ 4mA 81 nC @ 10 V ±30V 3410 pF @ 400 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH94N30P3

IXFH94N30P3

MOSFET N-CH 300V 94A TO247

IXYS
3,611 -

RFQ

IXFH94N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP94N20X4

IXTP94N20X4

MOSFET 200V 94A N-CH ULTRA TO220

IXYS
3,894 -

RFQ

IXTP94N20X4

Технические

Tube Ultra X4 Active N-Channel MOSFET (Metal Oxide) 200 V 94A (Tc) 10V 10.6mOhm @ 47A, 10V 4.5V @ 250µA 77 nC @ 10 V ±20V 5050 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH110N25T

IXFH110N25T

MOSFET N-CH 250V 110A TO247AD

IXYS
3,449 -

RFQ

IXFH110N25T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 110A (Tc) 10V 24mOhm @ 55A, 10V 4.5V @ 3mA 157 nC @ 10 V ±20V 9400 pF @ 25 V - 694W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMBG120R060M1HXTMA1

IMBG120R060M1HXTMA1

SICFET N-CH 1.2KV 36A TO263

Infineon Technologies
2,638 -

RFQ

IMBG120R060M1HXTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) - 83mOhm @ 13A, 18V 5.7V @ 5.6mA 34 nC @ 18 V +18V, -15V 1145 pF @ 800 V Standard 181W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPW35N60CFDFKSA1

SPW35N60CFDFKSA1

MOSFET N-CH 600V 34.1A TO247-3

Infineon Technologies
3,505 -

RFQ

SPW35N60CFDFKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 34.1A (Tc) 10V 118mOhm @ 21.6A, 10V 5V @ 1.9mA 212 nC @ 10 V ±20V 5060 pF @ 25 V - 313W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW68N65DM6-4AG

STW68N65DM6-4AG

MOSFET N-CH 650V 72A TO247-4

STMicroelectronics
3,614 -

RFQ

STW68N65DM6-4AG

Технические

Tube Automotive, AEC-Q101, MDmesh™ Active N-Channel MOSFET (Metal Oxide) 650 V 72A (Tc) - 39mOhm @ 36A, 10V 4.75V @ 250µA 118 nC @ 10 V ±25V 5900 pF @ 100 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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