Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUXCLF1404STRL

AUXCLF1404STRL

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies
3,664 -

RFQ

AUXCLF1404STRL

Технические

Tube * Active - - - - - - - - - - - - - -
AUXDIFZ44ESTRL

AUXDIFZ44ESTRL

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,451 -

RFQ

AUXDIFZ44ESTRL

Технические

Tube * Active - - - - - - - - - - - - - -
IPI50R399CPXKSA2

IPI50R399CPXKSA2

MOSFET N-CH 500V 9A TO262-3

Infineon Technologies
3,262 -

RFQ

IPI50R399CPXKSA2

Технические

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 399mOhm @ 4.9A, 10V 3.5V @ 330µA 23 nC @ 10 V ±20V 890 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP023N04NGHKSA1

IPP023N04NGHKSA1

MOSFET N-CH 40V 90A TO220-3

Infineon Technologies
2,958 -

RFQ

IPP023N04NGHKSA1

Технические

Tube OptiMOS™3 Active - - - - - - - - - - - - - -
IPP037N06L3GHKSA1

IPP037N06L3GHKSA1

MOSFET N-CH 60V 90A TO220-3

Infineon Technologies
3,002 -

RFQ

IPP037N06L3GHKSA1

Технические

Tube * Active - - - - - - - - - - - - - -
IPP041N04NGHKSA1

IPP041N04NGHKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies
2,137 -

RFQ

IPP041N04NGHKSA1

Технические

Tube OptiMOS™3 Active - - - 80A (Tc) - - - - - - - - - -
IPP05CN10NGHKSA1

IPP05CN10NGHKSA1

MOSFET N-CH 100V 100A TO-220

Infineon Technologies
3,681 -

RFQ

IPP05CN10NGHKSA1

Технические

Tube OptiMOS™2 Active - - - 100A (Tc) - - - - - - - - - -
IPP12CN10LGHKSA1

IPP12CN10LGHKSA1

MOSFET N-CH 100V 69A TO220-3

Infineon Technologies
3,992 -

RFQ

IPP12CN10LGHKSA1

Технические

Tube OptiMOS™2 Active - - - 69A (Tc) - - - - - - - - - -
IRLU3636-701TRP

IRLU3636-701TRP

MOSFET N-CH 60V 50A IPAK

Infineon Technologies
2,918 -

RFQ

IRLU3636-701TRP

Технические

Tube * Active - - - - - - - - - - - - - -
PJA3409_R1_00001

PJA3409_R1_00001

SOT-23, MOSFET

Panjit International Inc.
124,786 -

RFQ

PJA3409_R1_00001

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2.9A (Ta) 4.5V, 10V 110mOhm @ 2.9A, 10V 2.1V @ 250µA 9.8 nC @ 10 V ±20V 396 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJA3411_R1_00001

PJA3411_R1_00001

SOT-23, MOSFET

Panjit International Inc.
71,865 -

RFQ

PJA3411_R1_00001

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Ta) 1.8V, 4.5V 100mOhm @ 3.1A, 4.5V 1.2V @ 250µA 5.4 nC @ 10 V ±12V 416 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP11N65C3HKSA1

SPP11N65C3HKSA1

MOSFET N-CH 650V 11A TO-220

Infineon Technologies
2,616 -

RFQ

SPP11N65C3HKSA1

Технические

Tube CoolMOS™ Active - - - 11A (Tc) - - - - - - - - - -
PJA3406_R1_00001

PJA3406_R1_00001

SOT-23, MOSFET

Panjit International Inc.
23,500 -

RFQ

PJA3406_R1_00001

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 4.5V, 10V 48mOhm @ 4.4A, 10V 2.1V @ 250µA 5.8 nC @ 10 V ±20V 235 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380E6BTMA1

IPD60R380E6BTMA1

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
57,070 -

RFQ

IPD60R380E6BTMA1

Технические

Bulk,Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 155°C (TJ) Surface Mount
PJA3402_R1_00001

PJA3402_R1_00001

SOT-23, MOSFET

Panjit International Inc.
17,492 -

RFQ

PJA3402_R1_00001

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4.4A (Ta) 1.8V, 10V 48mOhm @ 4.4A, 10V 1.2V @ 250µA 11.3 nC @ 10 V ±12V 447 pF @ 15 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies
40,500 -

RFQ

IPU60R1K4C6BKMA1

Технические

Bulk,Bulk CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V Super Junction 28.4W (Tc) -55°C ~ 155°C (TJ) Through Hole
CSD23280F3

CSD23280F3

MOSFET P-CH 12V 1.8A 3PICOSTAR

Texas Instruments
25,115 -

RFQ

CSD23280F3

Технические

Tape & Reel (TR),Cut Tape (CT) FemtoFET™ Active P-Channel MOSFET (Metal Oxide) 12 V 1.8A (Ta) 1.5V, 4.5V 116mOhm @ 400mA, 4.5V 0.95V @ 250µA 1.23 nC @ 4.5 V -6V 234 pF @ 6 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380E6ATMA2

IPD60R380E6ATMA2

MOSFET N-CH 600V 10.6A TO252-3

Infineon Technologies
7,500 -

RFQ

IPD60R380E6ATMA2

Технические

Bulk,Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 300µA 32 nC @ 10 V ±20V 700 pF @ 100 V Super Junction 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU80R1K0CEAKMA1

IPU80R1K0CEAKMA1

MOSFET N-CH 800V 5.7A TO251-3

Infineon Technologies
99,000 -

RFQ

IPU80R1K0CEAKMA1

Технические

Bulk,Tube CoolMOS™ CE Obsolete N-Channel MOSFET (Metal Oxide) 800 V 5.7A (Tc) 10V 950mOhm @ 3.6A, 10V 3.9V @ 250µA 31 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOSS32338C

AOSS32338C

MOSFET N-CH 30V 4A SOT23-3

Alpha & Omega Semiconductor Inc.
55,470 -

RFQ

AOSS32338C

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 2.5V, 10V 50mOhm @ 4A, 10V 1.5V @ 250µA 16 nC @ 10 V ±12V 340 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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