| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DMN3028L-7MOSFET BVDSS: 25V~30V SOT23 T&R Diodes Incorporated |
2,501 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.2A (Ta) | 2.5V, 10V | 25mOhm @ 4A, 10V | 1.8V @ 250µA | 10.9 nC @ 10 V | ±20V | 680 pF @ 15 V | - | 860mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLML2246TRPBFMOSFET P-CH 20V 2.6A SOT23 Infineon Technologies |
55,159 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 2.6A (Ta) | 2.5V, 4.5V | 135mOhm @ 2.6A, 4.5V | 1.1V @ 10µA | 2.9 nC @ 4.5 V | ±12V | 220 pF @ 16 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
XP263N1001TR-GMOSFET N-CH 60V 1A SOT23 Torex Semiconductor Ltd |
9,725 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1A (Ta) | 4.5V, 10V | 250mOhm @ 500mA, 10V | 2.4V @ 250µA | 3.6 nC @ 10 V | ±20V | 180 pF @ 20 V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount |
|
DMN3051L-7MOSFET N-CH 30V 5.8A SOT23-3 Diodes Incorporated |
42,607 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.8A (Ta) | 4.5V, 10V | 38mOhm @ 5.8A, 10V | 2.2V @ 250µA | - | ±20V | 424 pF @ 5 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP2038USS-13MOSFET P-CH 20V 6.5A 8SO Diodes Incorporated |
4,989 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 38mOhm @ 5A, 4.5V | 1.1V @ 250µA | 14.4 nC @ 4.5 V | ±8V | 1496 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SSM6J512NU,LFMOSFET P-CH 12V 10A 6UDFNB Toshiba Semiconductor and Storage |
49,043 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSVII | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 10A (Ta) | 1.8V, 8V | 16.2mOhm @ 4A, 8V | 1V @ 1mA | 19.5 nC @ 4.5 V | ±10V | 1400 pF @ 6 V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount |
|
SI2302-TPMOSFET N-CH 20V 3A SOT-23 Micro Commercial Co |
19,840 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 2.5V, 4.5V | 72mOhm @ 3.6A, 4.5V | 1.2V @ 50µA | 10 nC @ 4.5 V | ±8V | 237 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SSM3K123TU,LFMOSFET N-CH 20V 4.2A UFM Toshiba Semiconductor and Storage |
21,568 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.2A (Ta) | 1.5V, 4V | 28mOhm @ 3A, 4V | 1V @ 1mA | 13.6 nC @ 4 V | ±10V | 1010 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
SI1077X-T1-GE3MOSFET P-CH 20V SC89-6 Vishay Siliconix |
7,609 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 1.75A (Ta) | 1.5V, 4.5V | 78mOhm @ 1.8A, 4.5V | 1V @ 250µA | 31.1 nC @ 8 V | ±8V | 965 pF @ 10 V | - | 330mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AON7400AMOSFET N-CH 30V 15A/40A 8DFN Alpha & Omega Semiconductor Inc. |
88,068 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 1380 pF @ 15 V | - | 3.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AO4498ELMOSFET N-CH 30V 18A 8SOIC Alpha & Omega Semiconductor Inc. |
3,333 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta) | 4.5V, 10V | 5.8mOhm @ 18A, 10V | 2.3V @ 250µA | 50 nC @ 10 V | ±20V | 2760 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AO4710L_101MOSFET N-CH 30V 12.7A 8SOIC Alpha & Omega Semiconductor Inc. |
3,555 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12.7A (Ta) | 4.5V, 10V | 11.8mOhm @ 12.7A, 10V | 2.3V @ 250µA | 43 nC @ 10 V | ±12V | 2376 pF @ 15 V | Schottky Diode (Body) | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CSD13302WMOSFET N-CH 12V 1.6A 4DSBGA Texas Instruments |
10,966 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 1.6A (Ta) | 2.5V, 4.5V | 17.1mOhm @ 1A, 4.5V | 1.3V @ 250µA | 7.8 nC @ 4.5 V | ±10V | 862 pF @ 6 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI2302DDS-T1-GE3MOSFET N-CH 20V 2.9A SOT23-3 Vishay Siliconix |
3,162 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2.9A (Tj) | 2.5V, 4.5V | 57mOhm @ 3.6A, 4.5V | 850mV @ 250µA | 5.5 nC @ 4.5 V | ±8V | - | - | 710mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AO4771LMOSFET P-CH 30V 4A 8SOIC Alpha & Omega Semiconductor Inc. |
3,775 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 4A (Ta) | 4.5V, 10V | 68mOhm @ 4A, 10V | 2.3V @ 250µA | 7 nC @ 10 V | ±20V | 350 pF @ 15 V | Schottky Diode (Body) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CSD13201W10MOSFET N-CH 12V 1.6A 4DSBGA Texas Instruments |
26,700 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 1.6A (Ta) | 1.8V, 4.5V | 34mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9 nC @ 4.5 V | ±8V | 462 pF @ 6 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AO5404E_001MOSFET N-CH 20V 500MA SC89-3 Alpha & Omega Semiconductor Inc. |
2,212 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.8V, 4.5V | 550mOhm @ 500mA, 4.5V | 1V @ 250µA | 1 nC @ 4.5 V | ±8V | 45 pF @ 10 V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SSM3J378R,LXHFAECQ MOSFET PCH -20V -6A SOT23F Toshiba Semiconductor and Storage |
13,541 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | 150°C | Surface Mount |
|
AO5404ELMOSFET N-CH 20V 500MA SC89-3 Alpha & Omega Semiconductor Inc. |
3,733 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 500mA (Ta) | 1.8V, 4.5V | 550mOhm @ 500mA, 4.5V | 1V @ 250µA | 1 nC @ 4.5 V | ±8V | 45 pF @ 10 V | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMPB85ENEAXMOSFET N-CH 60V 3A DFN2020MD-6 Nexperia USA Inc. |
5,057 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A (Ta) | 4.5V, 10V | 95mOhm @ 3A, 10V | 2.7V @ 250µA | 9.2 nC @ 10 V | ±20V | 305 pF @ 30 V | - | 1.6W (Ta), 15.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |