Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIR510DP-T1-RE3

SIR510DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
5,994 -

RFQ

SIR510DP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Ta), 126A (Tc) 7.5V, 10V 3.6mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 4980 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD7N60E-E3

SIHD7N60E-E3

MOSFET N-CH 600V 7A DPAK

Vishay Siliconix
2,930 -

RFQ

SIHD7N60E-E3

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLI520GPBF

IRLI520GPBF

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix
3,418 -

RFQ

IRLI520GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 4V, 5V 270mOhm @ 4.3A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4413DDY-T1-GE3

SI4413DDY-T1-GE3

MOSFET P-CHANNEL 8SOIC

Vishay Siliconix
2,776 -

RFQ

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) - - 4.5V, 10V 5.5mOhm @ 10A, 10V 1.6V @ 250µA 114 nC @ 10 V - 4780 pF @ 15 V - - -55°C ~ 125°C Surface Mount
IRF610STRRPBF

IRF610STRRPBF

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
2,497 -

RFQ

IRF610STRRPBF

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614STRRPBF

IRF614STRRPBF

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
2,811 -

RFQ

IRF614STRRPBF

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4124DY-T1-E3

SI4124DY-T1-E3

MOSFET N-CH 40V 20.5A 8SO

Vishay Siliconix
2,066 -

RFQ

SI4124DY-T1-E3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 77 nC @ 10 V ±20V 3540 pF @ 20 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4874BDY-T1-GE3

SI4874BDY-T1-GE3

MOSFET N-CH 30V 12A 8SO

Vishay Siliconix
2,327 -

RFQ

SI4874BDY-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 16A, 10V 3V @ 250µA 25 nC @ 4.5 V ±20V 3230 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP4N80E-GE3

SIHP4N80E-GE3

MOSFET N-CH 800V 4.3A TO220AB

Vishay Siliconix
3,436 -

RFQ

SIHP4N80E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF640S-GE3

SIHF640S-GE3

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix
2,199 -

RFQ

SIHF640S-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ401EP-T2_GE3

SQJ401EP-T2_GE3

MOSFET P-CH 12V 32A PPAK SO-8

Vishay Siliconix
2,209 -

RFQ

SQJ401EP-T2_GE3

Технические

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 32A (Tc) 2.5V, 4.5V 6mOhm @ 15A, 4.5V 1.5V @ 250µA 164 nC @ 4.5 V ±8V 10015 pF @ 6 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ431EP-T2_GE3

SQJ431EP-T2_GE3

MOSFET P-CH 200V 12A PPAK SO-8

Vishay Siliconix
2,603 -

RFQ

SQJ431EP-T2_GE3

Технические

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 6V, 10V 213mOhm @ 3.8A, 10V 3.5V @ 250µA 106 nC @ 10 V ±20V 4355 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4628DY-T1-GE3

SI4628DY-T1-GE3

MOSFET N-CH 30V 38A 8SO

Vishay Siliconix
3,083 -

RFQ

SI4628DY-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 2.5V @ 1mA 87 nC @ 10 V ±20V 3450 pF @ 15 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z14STRLPBF

IRF9Z14STRLPBF

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
3,338 -

RFQ

IRF9Z14STRLPBF

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHU7N60E-E3

SIHU7N60E-E3

MOSFET N-CH 600V 7A TO251

Vishay Siliconix
3,733 -

RFQ

SIHU7N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9610GPBF

IRFI9610GPBF

MOSFET P-CH 200V 2A TO220-3

Vishay Siliconix
2,496 -

RFQ

IRFI9610GPBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP7N60E-E3

SIHP7N60E-E3

MOSFET N-CH 600V 7A TO220AB

Vishay Siliconix
3,875 -

RFQ

SIHP7N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ14PBF-BE3

IRFZ14PBF-BE3

MOSFET N-CH 60V 10A TO220AB

Vishay Siliconix
1,978 -

RFQ

IRFZ14PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) - 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHFS9N60A-GE3

SIHFS9N60A-GE3

MOSFET N-CH 600V 9.2A TO263

Vishay Siliconix
3,270 -

RFQ

SIHFS9N60A-GE3

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA4N80E-GE3

SIHA4N80E-GE3

MOSFET N-CH 800V 4.3A TO220

Vishay Siliconix
3,407 -

RFQ

SIHA4N80E-GE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
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15,000+ Складские запасы
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