Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
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SIR510DP-T1-RE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
5,994 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen V | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Ta), 126A (Tc) | 7.5V, 10V | 3.6mOhm @ 20A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 4980 pF @ 50 V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHD7N60E-E3MOSFET N-CH 600V 7A DPAK Vishay Siliconix |
2,930 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRLI520GPBFMOSFET N-CH 100V 7.2A TO220-3 Vishay Siliconix |
3,418 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Tc) | 4V, 5V | 270mOhm @ 4.3A, 5V | 2V @ 250µA | 12 nC @ 5 V | ±10V | 490 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SI4413DDY-T1-GE3MOSFET P-CHANNEL 8SOIC Vishay Siliconix |
2,776 | - |
RFQ |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | - | - | 4.5V, 10V | 5.5mOhm @ 10A, 10V | 1.6V @ 250µA | 114 nC @ 10 V | - | 4780 pF @ 15 V | - | - | -55°C ~ 125°C | Surface Mount | |
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IRF610STRRPBFMOSFET N-CH 200V 3.3A D2PAK Vishay Siliconix |
2,497 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF614STRRPBFMOSFET N-CH 250V 2.7A D2PAK Vishay Siliconix |
2,811 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 3.1W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI4124DY-T1-E3MOSFET N-CH 40V 20.5A 8SO Vishay Siliconix |
2,066 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 20.5A (Tc) | 4.5V, 10V | 7.5mOhm @ 14A, 10V | 3V @ 250µA | 77 nC @ 10 V | ±20V | 3540 pF @ 20 V | - | 2.5W (Ta), 5.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SI4874BDY-T1-GE3MOSFET N-CH 30V 12A 8SO Vishay Siliconix |
2,327 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 16A, 10V | 3V @ 250µA | 25 nC @ 4.5 V | ±20V | 3230 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHP4N80E-GE3MOSFET N-CH 800V 4.3A TO220AB Vishay Siliconix |
3,436 | - |
RFQ |
![]() Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHF640S-GE3MOSFET N-CH 200V 18A D2PAK Vishay Siliconix |
2,199 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SQJ401EP-T2_GE3MOSFET P-CH 12V 32A PPAK SO-8 Vishay Siliconix |
2,209 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 32A (Tc) | 2.5V, 4.5V | 6mOhm @ 15A, 4.5V | 1.5V @ 250µA | 164 nC @ 4.5 V | ±8V | 10015 pF @ 6 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SQJ431EP-T2_GE3MOSFET P-CH 200V 12A PPAK SO-8 Vishay Siliconix |
2,603 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 12A (Tc) | 6V, 10V | 213mOhm @ 3.8A, 10V | 3.5V @ 250µA | 106 nC @ 10 V | ±20V | 4355 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SI4628DY-T1-GE3MOSFET N-CH 30V 38A 8SO Vishay Siliconix |
3,083 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | SkyFET®, TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 87 nC @ 10 V | ±20V | 3450 pF @ 15 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF9Z14STRLPBFMOSFET P-CH 60V 6.7A D2PAK Vishay Siliconix |
3,338 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SIHU7N60E-E3MOSFET N-CH 600V 7A TO251 Vishay Siliconix |
3,733 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFI9610GPBFMOSFET P-CH 200V 2A TO220-3 Vishay Siliconix |
2,496 | - |
RFQ |
![]() Технические |
Tube | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 2A (Tc) | 10V | 3Ohm @ 1.2A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SIHP7N60E-E3MOSFET N-CH 600V 7A TO220AB Vishay Siliconix |
3,875 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFZ14PBF-BE3MOSFET N-CH 60V 10A TO220AB Vishay Siliconix |
1,978 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10A (Tc) | - | 200mOhm @ 6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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SIHFS9N60A-GE3MOSFET N-CH 600V 9.2A TO263 Vishay Siliconix |
3,270 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.2A (Tc) | 10V | 750mOhm @ 5.5A, 10V | 4V @ 250µA | 49 nC @ 10 V | ±30V | 1400 pF @ 25 V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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SIHA4N80E-GE3MOSFET N-CH 800V 4.3A TO220 Vishay Siliconix |
3,407 | - |
RFQ |
![]() Технические |
Tube | E | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |