Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP25N50E-BE3

SIHP25N50E-BE3

N-CHANNEL 500V

Vishay Siliconix
2,996 -

RFQ

SIHP25N50E-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LCPBF-BE3

IRFBC40LCPBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
846 -

RFQ

IRFBC40LCPBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM50N04-4M0L_GE3

SQM50N04-4M0L_GE3

MOSFET N-CHANNEL 40V 50A TO263

Vishay Siliconix
2,431 -

RFQ

SQM50N04-4M0L_GE3

Технические

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 6100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD19N20-90-T4-E3

SUD19N20-90-T4-E3

MOSFET N-CH 200V 19A TO252

Vishay Siliconix
2,634 -

RFQ

SUD19N20-90-T4-E3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19A (Tc) 6V, 10V 90mOhm @ 5A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 1800 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9530STRRPBF

IRF9530STRRPBF

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
2,651 -

RFQ

IRF9530STRRPBF

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL630STRLPBF

IRL630STRLPBF

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,751 -

RFQ

IRL630STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4V, 5V 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFIBF20GPBF

IRFIBF20GPBF

MOSFET N-CH 900V 1.2A TO220-3

Vishay Siliconix
3,697 -

RFQ

IRFIBF20GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.2A (Tc) 10V 8Ohm @ 720mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP25N60EFL-BE3

SIHP25N60EFL-BE3

N-CHANNEL 600V

Vishay Siliconix
978 -

RFQ

SIHP25N60EFL-BE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP22N60AE-BE3

SIHP22N60AE-BE3

N-CHANNEL 600V

Vishay Siliconix
2,000 -

RFQ

SIHP22N60AE-BE3

Технические

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUM40012EL-GE3

SUM40012EL-GE3

MOSFET N-CH 40V 150A TO263

Vishay Siliconix
2,133 -

RFQ

SUM40012EL-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.67mOhm @ 30A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 10930 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHK045N60E-T1-GE3

SIHK045N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

Vishay Siliconix
2,000 -

RFQ

SIHK045N60E-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 49mOhm @ 17A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 4013 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR844DP-T1-GE3

SIR844DP-T1-GE3

MOSFET N-CH 25V 50A PPAK SO-8

Vishay Siliconix
3,857 -

RFQ

SIR844DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 50A (Tc) 4.5V, 10V 2.8mOhm @ 15A, 10V 2.6V @ 250µA 90 nC @ 10 V ±20V 3215 pF @ 10 V - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCSPBF

IRF840LCSPBF

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,994 -

RFQ

IRF840LCSPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD50P06-15L-T4-E3

SUD50P06-15L-T4-E3

MOSFET P-CH 60V 50A TO252

Vishay Siliconix
3,751 -

RFQ

SUD50P06-15L-T4-E3

Технические

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 15mOhm @ 17A, 10V 3V @ 250µA 165 nC @ 10 V ±20V 4950 pF @ 25 V - 3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP15N60E-E3

SIHP15N60E-E3

MOSFET N-CH 600V 15A TO220AB

Vishay Siliconix
2,316 -

RFQ

SIHP15N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFPS38N60L-GE3

SIHFPS38N60L-GE3

POWER MOSFET SUPER-247, 150 M @

Vishay Siliconix
380 -

RFQ

SIHFPS38N60L-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 150mOhm @ 23A, 10V 5V @ 250µA 320 nC @ 10 V ±30V 7990 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHS36N50D-GE3

SIHS36N50D-GE3

D SERIES POWER MOSFET SUPER-247

Vishay Siliconix
3,057 -

RFQ

SIHS36N50D-GE3

Технические

Tube D Active N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 18A, 10V 5V @ 250µA 125 nC @ 10 V ±30V 3233 pF @ 100 V - 446W (Tc) -55°C ~ 150°C (TJ)
IRFP27N60KPBF

IRFP27N60KPBF

MOSFET N-CH 600V 27A TO247-3

Vishay Siliconix
5,085 -

RFQ

IRFP27N60KPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 220mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 4660 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

MOSFET N-CH 40V 50A TO263

Vishay Siliconix
3,430 -

RFQ

SQM50N04-4M1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 4.1mOhm @ 30A, 10V 3.5V @ 250µA 105 nC @ 10 V ±20V 6715 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC30SPBF

IRFBC30SPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,189 -

RFQ

IRFBC30SPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь