Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI2304BDS-T1-BE3

SI2304BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
8,133 -

RFQ

SI2304BDS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 70mOhm @ 2.5A, 10V 3V @ 250µA 7 nC @ 10 V ±20V 225 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1403BDL-T1-E3

SI1403BDL-T1-E3

MOSFET P-CH 20V 1.4A SC70-6

Vishay Siliconix
1,344 -

RFQ

SI1403BDL-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 1.4A (Ta) 2.5V, 4.5V 150mOhm @ 1.5A, 4.5V 1.3V @ 250µA 4.5 nC @ 4.5 V ±12V - - 568mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ2301ES-T1_GE3

SQ2301ES-T1_GE3

MOSFET P-CH 20V 3.9A TO236

Vishay Siliconix
2,850 -

RFQ

SQ2301ES-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.9A (Tc) 2.5V, 4.5V 120mOhm @ 2.8A, 4.5V 1.5V @ 250µA 8 nC @ 4.5 V ±8V 425 pF @ 10 V - 3W (Tc) -55°C ~ 175°C (TA) Surface Mount
SIHA21N60EF-E3

SIHA21N60EF-E3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix
3,249 -

RFQ

SIHA21N60EF-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQP120P06-6M7L_GE3

SQP120P06-6M7L_GE3

MOSFET P-CH 60V TO220AB

Vishay Siliconix
2,586 -

RFQ

Tube - Last Time Buy - - - 119A (Tc) - - - - - - - - - Through Hole
SQP90P06-07L_GE3

SQP90P06-07L_GE3

MOSFET P-CH 60V 120A TO220AB

Vishay Siliconix
3,376 -

RFQ

SQP90P06-07L_GE3

Технические

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2.5V @ 250µA 270 nC @ 10 V ±20V 14280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI3457CDV-T1-GE3

SI3457CDV-T1-GE3

MOSFET P-CH 30V 5.1A 6TSOP

Vishay Siliconix
1,322 -

RFQ

SI3457CDV-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.1A (Tc) 4.5V, 10V 74mOhm @ 4.1A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 15 V - 2W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3424CDV-T1-BE3

SI3424CDV-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
1,161 -

RFQ

SI3424CDV-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 7.2A (Ta), 8A (Tc) 4.5V, 10V 26mOhm @ 7.2A, 10V 2.5V @ 250µA 12.5 nC @ 10 V ±20V 405 pF @ 15 V - 2W (Ta), 3.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2303ES-T1_BE3

SQ2303ES-T1_BE3

MOSFET P-CH 30V 2.5A SOT23-3

Vishay Siliconix
361 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Tc) 4.5V, 10V 170mOhm @ 1.7A, 10V 2.5V @ 250µA 6.8 nC @ 10 V ±20V 210 pF @ 25 V - 1.9W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI2306BDS-T1-BE3

SI2306BDS-T1-BE3

N-CHANNEL 30-V (D-S) MOSFET

Vishay Siliconix
3,691 -

RFQ

SI2306BDS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.16A (Ta) 4.5V, 10V 47mOhm @ 3.5A, 10V 3V @ 250µA 4.5 nC @ 5 V ±20V 305 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2312BDS-T1-BE3

SI2312BDS-T1-BE3

N-CHANNEL 20-V (D-S) MOSFET

Vishay Siliconix
2,280 -

RFQ

SI2312BDS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3.9A (Ta) 1.8V, 4.5V 31mOhm @ 5A, 4.5V 850mV @ 250µA 12 nC @ 4.5 V ±8V - - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60E-E3

SIHP22N60E-E3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,967 -

RFQ

SIHP22N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIA427DJ-T1-GE3

SIA427DJ-T1-GE3

MOSFET P-CH 8V 12A PPAK SC70-6

Vishay Siliconix
1,007 -

RFQ

SIA427DJ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 12A (Tc) 1.2V, 4.5V 16mOhm @ 8.2A, 4.5V 800mV @ 250µA 50 nC @ 5 V ±5V 2300 pF @ 4 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB22N60E-E3

SIHB22N60E-E3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix
2,415 -

RFQ

SIHB22N60E-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1920 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7880ADP-T1-GE3

SI7880ADP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
3,461 -

RFQ

SI7880ADP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 3V @ 250µA 125 nC @ 10 V ±20V 5600 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP22N60EL-GE3

SIHP22N60EL-GE3

MOSFET N-CH 600V 21A TO220AB

Vishay Siliconix
3,828 -

RFQ

SIHP22N60EL-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI3442BDV-T1-BE3

SI3442BDV-T1-BE3

N-CHANNEL 2.5-V (G-S) MOSFET

Vishay Siliconix
2,790 -

RFQ

SI3442BDV-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 57mOhm @ 4A, 4.5V 1.8V @ 250µA 5 nC @ 4.5 V ±12V 295 pF @ 10 V - 860mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF644STRLPBF

IRF644STRLPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,250 -

RFQ

IRF644STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA22N60EL-E3

SIHA22N60EL-E3

MOSFET N-CHANNEL 600V 21A TO220

Vishay Siliconix
2,643 -

RFQ

SIHA22N60EL-E3

Технические

Tube EL Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 197mOhm @ 11A, 10V 5V @ 250µA 74 nC @ 10 V ±30V 1690 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7002-T1-E3

2N7002-T1-E3

MOSFET N-CH 60V 115MA TO236

Vishay Siliconix
315 -

RFQ

2N7002-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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