Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFI624G

IRFI624G

MOSFET N-CH 250V 3.4A TO220-3

Vishay Siliconix
3,694 -

RFQ

IRFI624G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.4A (Tc) 10V 1.1Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI630G

IRFI630G

MOSFET N-CH 200V 5.9A TO220-3

Vishay Siliconix
2,381 -

RFQ

IRFI630G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.9A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI634G

IRFI634G

MOSFET N-CH 250V 5.6A TO220-3

Vishay Siliconix
2,825 -

RFQ

IRFI634G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 5.6A (Tc) 10V 450mOhm @ 3.4A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI640G

IRFI640G

MOSFET N-CH 200V 9.8A TO220-3

Vishay Siliconix
2,982 -

RFQ

IRFI640G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.8A (Tc) 10V 180mOhm @ 5.9A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI644G

IRFI644G

MOSFET N-CH 250V 7.9A TO220-3

Vishay Siliconix
2,436 -

RFQ

IRFI644G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.9A (Tc) 10V 280mOhm @ 4.7A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI720G

IRFI720G

MOSFET N-CH 400V 2.6A TO220-3

Vishay Siliconix
3,234 -

RFQ

IRFI720G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 1.8Ohm @ 1.6A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI730G

IRFI730G

MOSFET N-CH 400V 3.7A TO220-3

Vishay Siliconix
2,861 -

RFQ

IRFI730G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.7A (Tc) 10V 1Ohm @ 2.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI744G

IRFI744G

MOSFET N-CH 450V 4.9A TO220-3

Vishay Siliconix
2,604 -

RFQ

IRFI744G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 630mOhm @ 2.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI820G

IRFI820G

MOSFET N-CH 500V 2.1A TO220-3

Vishay Siliconix
2,436 -

RFQ

IRFI820G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI840GLC

IRFI840GLC

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix
2,367 -

RFQ

IRFI840GLC

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9530G

IRFI9530G

MOSFET P-CH 100V 7.7A TO220-3

Vishay Siliconix
2,527 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 10V 300mOhm @ 4.6A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9540G

IRFI9540G

MOSFET P-CH 100V 11A TO220-3

Vishay Siliconix
3,537 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 200mOhm @ 6.6A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9620G

IRFI9620G

MOSFET P-CH 200V 3A TO220-3

Vishay Siliconix
2,101 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3A (Tc) 10V 1.5Ohm @ 1.8A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 15 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9630G

IRFI9630G

MOSFET P-CH 200V 4.3A TO220-3

Vishay Siliconix
3,896 -

RFQ

IRFI9630G

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 4.3A (Tc) 10V 800mOhm @ 2.6A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9Z34G

IRFI9Z34G

MOSFET P-CH 60V 12A TO220-3

Vishay Siliconix
3,177 -

RFQ

IRFI9Z34G

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 140mOhm @ 7.2A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIB5N65A

IRFIB5N65A

MOSFET N-CH 650V 5.1A TO220-3

Vishay Siliconix
2,198 -

RFQ

IRFIB5N65A

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 5.1A (Tc) 10V 930mOhm @ 3.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB6N60A

IRFIB6N60A

MOSFET N-CH 600V 5.5A TO220-3

Vishay Siliconix
3,458 -

RFQ

IRFIB6N60A

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 750mOhm @ 3.3A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB7N50A

IRFIB7N50A

MOSFET N-CH 500V 6.6A TO220-3

Vishay Siliconix
2,697 -

RFQ

IRFIB7N50A

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.6A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC20G

IRFIBC20G

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix
3,111 -

RFQ

IRFIBC20G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC30G

IRFIBC30G

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix
3,463 -

RFQ

IRFIBC30G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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