Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI2301CDS-T1-E3

SI2301CDS-T1-E3

MOSFET P-CH 20V 3.1A SOT23-3

Vishay Siliconix
2,229 -

RFQ

SI2301CDS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.1A (Tc) 2.5V, 4.5V 112mOhm @ 2.8A, 4.5V 1V @ 250µA 10 nC @ 4.5 V ±8V 405 pF @ 10 V - 860mW (Ta), 1.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2318CDS-T1-GE3

SI2318CDS-T1-GE3

MOSFET N-CH 40V 5.6A SOT23-3

Vishay Siliconix
3,661 -

RFQ

SI2318CDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 5.6A (Tc) 4.5V, 10V 42mOhm @ 4.3A, 10V 2.5V @ 250µA 9 nC @ 10 V ±20V 340 pF @ 20 V - 1.25W (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1308EDL-T1-GE3

SI1308EDL-T1-GE3

MOSFET N-CH 30V 1.4A SOT323

Vishay Siliconix
2,285 -

RFQ

SI1308EDL-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.4A (Tc) 2.5V, 10V 132mOhm @ 1.4A, 10V 1.5V @ 250µA 4.1 nC @ 10 V ±12V 105 pF @ 15 V - 400mW (Ta), 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2301BDS-T1-E3

SI2301BDS-T1-E3

MOSFET P-CH 20V 2.2A SOT23-3

Vishay Siliconix
3,429 -

RFQ

SI2301BDS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.5V, 4.5V 100mOhm @ 2.8A, 4.5V 950mV @ 250µA 10 nC @ 4.5 V ±8V 375 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2300DS-T1-GE3

SI2300DS-T1-GE3

MOSFET N-CH 30V 3.6A SOT23-3

Vishay Siliconix
2,635 -

RFQ

SI2300DS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.6A (Tc) 2.5V, 4.5V 68mOhm @ 2.9A, 4.5V 1.5V @ 250µA 10 nC @ 10 V ±12V 320 pF @ 15 V - 1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8802DB-T2-E1

SI8802DB-T2-E1

MOSFET N-CH 8V 4MICROFOOT

Vishay Siliconix
2,252 -

RFQ

SI8802DB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 3A (Ta) 1.2V, 4.5V 54mOhm @ 1A, 4.5V 700mV @ 250µA 6.5 nC @ 4.5 V ±5V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2312CDS-T1-GE3

SI2312CDS-T1-GE3

MOSFET N-CH 20V 6A SOT23-3

Vishay Siliconix
2,903 -

RFQ

SI2312CDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.8V, 4.5V 31.8mOhm @ 5A, 4.5V 1V @ 250µA 18 nC @ 5 V ±8V 865 pF @ 10 V - 1.25W (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1050X-T1-GE3

SI1050X-T1-GE3

MOSFET N-CH 8V 1.34A SC89-6

Vishay Siliconix
3,961 -

RFQ

SI1050X-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 8 V 1.34A (Ta) 1.5V, 4.5V 86mOhm @ 1.34A, 4.5V 900mV @ 250µA 11.6 nC @ 5 V ±5V 585 pF @ 4 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1012R-T1-GE3

SI1012R-T1-GE3

MOSFET N-CH 20V 500MA SC75A

Vishay Siliconix
2,828 -

RFQ

SI1012R-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.8V, 4.5V 700mOhm @ 600mA, 4.5V 900mV @ 250µA 0.75 nC @ 4.5 V ±6V - - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2315BDS-T1-E3

SI2315BDS-T1-E3

MOSFET P-CH 12V 3A SOT23-3

Vishay Siliconix
2,982 -

RFQ

SI2315BDS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4.5V 50mOhm @ 3.85A, 4.5V 900mV @ 250µA 15 nC @ 4.5 V ±8V 715 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2308BDS-T1-GE3

SI2308BDS-T1-GE3

MOSFET N-CH 60V 2.3A SOT23-3

Vishay Siliconix
3,749 -

RFQ

SI2308BDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 156mOhm @ 1.9A, 10V 3V @ 250µA 6.8 nC @ 10 V ±20V 190 pF @ 30 V - 1.09W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2308BDS-T1-E3

SI2308BDS-T1-E3

MOSFET N-CH 60V 2.3A SOT23-3

Vishay Siliconix
3,800 -

RFQ

SI2308BDS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2.3A (Tc) 4.5V, 10V 156mOhm @ 1.9A, 10V 3V @ 250µA 6.8 nC @ 10 V ±20V 190 pF @ 30 V - 1.09W (Ta), 1.66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2309CDS-T1-GE3

SI2309CDS-T1-GE3

MOSFET P-CH 60V 1.6A SOT23-3

Vishay Siliconix
3,753 -

RFQ

SI2309CDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 1.6A (Tc) 4.5V, 10V 345mOhm @ 1.25A, 10V 3V @ 250µA 4.1 nC @ 4.5 V ±20V 210 pF @ 30 V - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2319CDS-T1-GE3

SI2319CDS-T1-GE3

MOSFET P-CH 40V 4.4A SOT23-3

Vishay Siliconix
2,913 -

RFQ

SI2319CDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 4.4A (Tc) 4.5V, 10V 77mOhm @ 3.1A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 595 pF @ 20 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2318AES-T1_GE3

SQ2318AES-T1_GE3

MOSFET N-CH 40V 8A SOT23-3

Vishay Siliconix
2,962 -

RFQ

SQ2318AES-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Tc) 4.5V, 10V 31mOhm @ 7.9A, 10V 2.5V @ 250µA 13 nC @ 10 V ±20V 555 pF @ 10 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ1470AEH-T1_GE3

SQ1470AEH-T1_GE3

MOSFET N-CH 30V 1.7A SOT363 SC70

Vishay Siliconix
2,941 -

RFQ

SQ1470AEH-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Tc) 2.5V, 4.5V 65mOhm @ 4.2A, 4.5V 1.6V @ 250µA 5.2 nC @ 4.5 V ±12V 450 pF @ 15 V - 3.3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2318AES-T1_BE3

SQ2318AES-T1_BE3

MOSFET N-CH 40V 8A SOT23-3

Vishay Siliconix
3,822 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Tc) 4.5V, 10V 31mOhm @ 7.9A, 10V 2.5V @ 250µA 13 nC @ 10 V ±20V 553 pF @ 20 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI2343CDS-T1-GE3

SI2343CDS-T1-GE3

MOSFET P-CH 30V 5.9A SOT23-3

Vishay Siliconix
2,688 -

RFQ

SI2343CDS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.9A (Tc) 4.5V, 10V 45mOhm @ 4.2A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 590 pF @ 15 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA429DJT-T1-GE3

SIA429DJT-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
210 -

RFQ

SIA429DJT-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.5V, 4.5V 20.5mOhm @ 6A, 4.5V 1V @ 250µA 62 nC @ 8 V ±8V 1750 pF @ 10 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2333CDS-T1-E3

SI2333CDS-T1-E3

MOSFET P-CH 12V 7.1A SOT23-3

Vishay Siliconix
2,712 -

RFQ

SI2333CDS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 7.1A (Tc) 1.8V, 4.5V 35mOhm @ 5.1A, 4.5V 1V @ 250µA 25 nC @ 4.5 V ±8V 1225 pF @ 6 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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