Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLZ44PBF-BE3

IRLZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
796 -

RFQ

IRLZ44PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB9N60APBF-BE3

IRFB9N60APBF-BE3

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix
3,606 -

RFQ

IRFB9N60APBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) - 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFPS40N60K-GE3

SIHFPS40N60K-GE3

POWER MOSFET SUPER-247, 130 M @

Vishay Siliconix
100 -

RFQ

SIHFPS40N60K-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF510L

IRF510L

MOSFET N-CH 100V 5.6A TO262-3

Vishay Siliconix
2,791 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V - 180 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF510STRL

IRF510STRL

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,097 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF510STRR

IRF510STRR

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,109 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520S

IRF520S

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,990 -

RFQ

IRF520S

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520STRL

IRF520STRL

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
3,053 -

RFQ

IRF520STRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520STRR

IRF520STRR

MOSFET N-CH 100V 9.2A D2PAK

Vishay Siliconix
2,297 -

RFQ

IRF520STRR

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 10V 270mOhm @ 5.5A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530L

IRF530L

MOSFET N-CH 100V 14A TO262

Vishay Siliconix
2,325 -

RFQ

IRF530L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF530STRL

IRF530STRL

MOSFET N-CH 100V 14A D2PAK

Vishay Siliconix
2,732 -

RFQ

IRF530STRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 670 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540L

IRF540L

MOSFET N-CH 100V 28A TO262

Vishay Siliconix
2,688 -

RFQ

IRF540L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF610L

IRF610L

MOSFET N-CH 200V 3.3A TO262

Vishay Siliconix
3,241 -

RFQ

IRF610L

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF610STRL

IRF610STRL

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
2,143 -

RFQ

IRF610STRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF610STRR

IRF610STRR

MOSFET N-CH 200V 3.3A D2PAK

Vishay Siliconix
2,990 -

RFQ

IRF610STRR

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614L

IRF614L

MOSFET N-CH 250V 2.7A TO262

Vishay Siliconix
2,523 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF614STRL

IRF614STRL

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
3,646 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF614STRR

IRF614STRR

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
2,658 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF620L

IRF620L

MOSFET N-CH 200V 5.2A I2PAK

Vishay Siliconix
2,354 -

RFQ

IRF620L

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF620STRL

IRF620STRL

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
3,797 -

RFQ

IRF620STRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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