Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPC50LC

IRFPC50LC

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
2,794 -

RFQ

IRFPC50LC

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24STRL

IRF9Z24STRL

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix
2,711 -

RFQ

IRF9Z24STRL

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34STRR

IRF9Z34STRR

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
3,895 -

RFQ

IRF9Z34STRR

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC20STRL

IRFBC20STRL

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,458 -

RFQ

IRFBC20STRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20STRR

IRFBC20STRR

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,604 -

RFQ

IRFBC20STRR

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30AL

IRFBC30AL

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
3,648 -

RFQ

IRFBC30AL

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30ASTRL

IRFBC30ASTRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
3,427 -

RFQ

IRFBC30ASTRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30ASTRR

IRFBC30ASTRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,191 -

RFQ

IRFBC30ASTRR

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRL

IRFBC30STRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,675 -

RFQ

IRFBC30STRL

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRR

IRFBC30STRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,802 -

RFQ

IRFBC30STRR

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40AL

IRFBC40AL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,985 -

RFQ

IRFBC40AL

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - - - Through Hole
IRFBC40ASTRL

IRFBC40ASTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,519 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40ASTRR

IRFBC40ASTRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,638 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCL

IRFBC40LCL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,636 -

RFQ

IRFBC40LCL

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LC

IRFBC40LC

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
3,264 -

RFQ

IRFBC40LC

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LCS

IRFBC40LCS

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,411 -

RFQ

IRFBC40LCS

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCSTRL

IRFBC40LCSTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,265 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2303CDS-T1-BE3

SI2303CDS-T1-BE3

MOSFET P-CH 30V 1.9A/2.7A SOT23

Vishay Siliconix
904 -

RFQ

SI2303CDS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta), 2.7A (Tc) 4.5V, 10V 190mOhm @ 1.9A, 10V 3V @ 250µA 8 nC @ 10 V ±20V 155 pF @ 15 V - 1W (Ta), 2.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1032X-T1-GE3

SI1032X-T1-GE3

MOSFET N-CH 20V 200MA SC89-3

Vishay Siliconix
150 -

RFQ

SI1032X-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI8819EDB-T2-E1

SI8819EDB-T2-E1

MOSFET P-CH 12V 2.9A 4MICRO FOOT

Vishay Siliconix
3,859 -

RFQ

SI8819EDB-T2-E1

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 2.9A (Ta) 1.5V, 3.7V 80mOhm @ 1.5A, 3.7V 900mV @ 250µA 17 nC @ 8 V ±8V 650 pF @ 6 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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