Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP03N60C3XKSA1

SPP03N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
554,907 -

RFQ

SPP03N60C3XKSA1

Технические

Tube,Tube * Obsolete - - - - - - - - - - - - - -
RQ5E025TNTL

RQ5E025TNTL

MOSFET N-CH 30V 2.5A TSMT3

Rohm Semiconductor
900 -

RFQ

RQ5E025TNTL

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 2.5V, 4.5V 92mOhm @ 2.5A, 4.5V 1.5V @ 1mA 4.6 nC @ 4.5 V ±12V 220 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
SISA88DN-T1-GE3

SISA88DN-T1-GE3

MOSFET N-CH 30V 16.2A/40.5A PPAK

Vishay Siliconix
110,405 -

RFQ

SISA88DN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 16.2A (Ta), 40.5A (Tc) 4.5V, 10V 6.7mOhm @ 10A, 10V 2.4V @ 250µA 25.5 nC @ 10 V +20V, -16V 985 pF @ 15 V - 3.2W (Ta), 19.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1330EDL-T1-E3

SI1330EDL-T1-E3

MOSFET N-CH 60V 240MA SC70-3

Vishay Siliconix
14,835 -

RFQ

SI1330EDL-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 240mA (Ta) 3V, 10V 2.5Ohm @ 250mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTGS3455T1G

NTGS3455T1G

MOSFET P-CH 30V 2.5A 6TSOP

onsemi
44,995 -

RFQ

NTGS3455T1G

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 2.5A (Ta) 4.5V, 10V 100mOhm @ 3.5A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 480 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT3006LFDF-7

DMT3006LFDF-7

MOSFET N-CH 30V 14.1A 6UDFN

Diodes Incorporated
49,356 -

RFQ

DMT3006LFDF-7

Технические

Cut Tape (CT),Tape & Box (TB) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 14.1A (Ta) 3.7V, 10V 7mOhm @ 9A, 10V 3V @ 250µA 22.6 nC @ 10 V ±20V 1320 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP03N60S5XKSA1

SPP03N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies
36,930 -

RFQ

SPP03N60S5XKSA1

Технические

Tube,Tube * Obsolete - - - - - - - - - - - - - -
PJW5P06A_R2_00001

PJW5P06A_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
4,726 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 5A (Ta) 4.5V, 10V 68mOhm @ 5A, 10V 2.5V @ 250µA 17 nC @ 10 V ±20V 879 pF @ 30 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPP04N50C3XKSA1

SPP04N50C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
2,475 -

RFQ

SPP04N50C3XKSA1

Технические

Tube * Obsolete - - - - - - - - - - - - - -
FDN028N20

FDN028N20

MOSFET N-CH 20V 6.1A SUPERSOT3

onsemi
2,999 -

RFQ

FDN028N20

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 6.1A (Tc) 2.5V, 4.5V 28mOhm @ 5.2A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 600 pF @ 10 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPP06N60C3XKSA1

SPP06N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
2,140 -

RFQ

SPP06N60C3XKSA1

Технические

Tube * Obsolete - - - - - - - - - - - - - -
SPP07N60S5HKSA1

SPP07N60S5HKSA1

LOW POWER_LEGACY

Infineon Technologies
3,277 -

RFQ

SPP07N60S5HKSA1

Технические

Tube * Obsolete - - - - - - - - - - - - - -
SPP07N60S5XKSA1

SPP07N60S5XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,964 -

RFQ

SPP07N60S5XKSA1

Технические

Tube * Obsolete - - - - - - - - - - - - - -
SPP07N65C3XKSA1

SPP07N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,988 -

RFQ

SPP07N65C3XKSA1

Технические

Tube,Tube * Obsolete - - - - - - - - - - - - - -
SPP12N50C3XKSA1

SPP12N50C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
10,229 -

RFQ

SPP12N50C3XKSA1

Технические

Tube,Tube * Obsolete - - - - - - - - - - - - - -
SPS02N60C3BKMA1

SPS02N60C3BKMA1

LOW POWER_LEGACY

Infineon Technologies
41,925 -

RFQ

SPS02N60C3BKMA1

Технические

Tube,Tube * Obsolete - - - - - - - - - - - - - -
CSD22205L

CSD22205L

MOSFET P-CH 8V 7.4A 4PICOSTAR

Texas Instruments
18,920 -

RFQ

CSD22205L

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active P-Channel MOSFET (Metal Oxide) 8 V 7.4A (Ta) 1.5V, 4.5V 9.9mOhm @ 1A, 4.5V 1.05V @ 250µA 8.5 nC @ 4.5 V -6V 1390 pF @ 4 V - 600mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC020N03LSGATMA2

BSC020N03LSGATMA2

LV POWER MOS

Infineon Technologies
2,049 -

RFQ

BSC020N03LSGATMA2

Технические

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
R6015KNZC8

R6015KNZC8

MOSFET N-CHANNEL 600V 15A TO3PF

Rohm Semiconductor
2,282 -

RFQ

R6015KNZC8

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6020KNZC8

R6020KNZC8

MOSFET N-CHANNEL 600V 20A TO3PF

Rohm Semiconductor
3,261 -

RFQ

R6020KNZC8

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь