| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPP03N60C3XKSA1LOW POWER_LEGACY Infineon Technologies |
554,907 | - |
RFQ |
Технические |
Tube,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RQ5E025TNTLMOSFET N-CH 30V 2.5A TSMT3 Rohm Semiconductor |
900 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 2.5V, 4.5V | 92mOhm @ 2.5A, 4.5V | 1.5V @ 1mA | 4.6 nC @ 4.5 V | ±12V | 220 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount |
|
SISA88DN-T1-GE3MOSFET N-CH 30V 16.2A/40.5A PPAK Vishay Siliconix |
110,405 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16.2A (Ta), 40.5A (Tc) | 4.5V, 10V | 6.7mOhm @ 10A, 10V | 2.4V @ 250µA | 25.5 nC @ 10 V | +20V, -16V | 985 pF @ 15 V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1330EDL-T1-E3MOSFET N-CH 60V 240MA SC70-3 Vishay Siliconix |
14,835 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 240mA (Ta) | 3V, 10V | 2.5Ohm @ 250mA, 10V | 2.5V @ 250µA | 0.6 nC @ 4.5 V | ±20V | - | - | 280mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTGS3455T1GMOSFET P-CH 30V 2.5A 6TSOP onsemi |
44,995 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2.5A (Ta) | 4.5V, 10V | 100mOhm @ 3.5A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 480 pF @ 5 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT3006LFDF-7MOSFET N-CH 30V 14.1A 6UDFN Diodes Incorporated |
49,356 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 14.1A (Ta) | 3.7V, 10V | 7mOhm @ 9A, 10V | 3V @ 250µA | 22.6 nC @ 10 V | ±20V | 1320 pF @ 15 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SPP03N60S5XKSA1LOW POWER_LEGACY Infineon Technologies |
36,930 | - |
RFQ |
Технические |
Tube,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
PJW5P06A_R2_0000160V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
4,726 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4.5V, 10V | 68mOhm @ 5A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 879 pF @ 30 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SPP04N50C3XKSA1LOW POWER_LEGACY Infineon Technologies |
2,475 | - |
RFQ |
Технические |
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDN028N20MOSFET N-CH 20V 6.1A SUPERSOT3 onsemi |
2,999 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.1A (Tc) | 2.5V, 4.5V | 28mOhm @ 5.2A, 4.5V | 1.5V @ 250µA | 6 nC @ 4.5 V | ±12V | 600 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SPP06N60C3XKSA1LOW POWER_LEGACY Infineon Technologies |
2,140 | - |
RFQ |
Технические |
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPP07N60S5HKSA1LOW POWER_LEGACY Infineon Technologies |
3,277 | - |
RFQ |
Технические |
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPP07N60S5XKSA1LOW POWER_LEGACY Infineon Technologies |
3,964 | - |
RFQ |
Технические |
Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPP07N65C3XKSA1LOW POWER_LEGACY Infineon Technologies |
3,988 | - |
RFQ |
Технические |
Tube,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPP12N50C3XKSA1LOW POWER_LEGACY Infineon Technologies |
10,229 | - |
RFQ |
Технические |
Tube,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SPS02N60C3BKMA1LOW POWER_LEGACY Infineon Technologies |
41,925 | - |
RFQ |
Технические |
Tube,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
CSD22205LMOSFET P-CH 8V 7.4A 4PICOSTAR Texas Instruments |
18,920 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 7.4A (Ta) | 1.5V, 4.5V | 9.9mOhm @ 1A, 4.5V | 1.05V @ 250µA | 8.5 nC @ 4.5 V | -6V | 1390 pF @ 4 V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC020N03LSGATMA2LV POWER MOS Infineon Technologies |
2,049 | - |
RFQ |
Технические |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
R6015KNZC8MOSFET N-CHANNEL 600V 15A TO3PF Rohm Semiconductor |
2,282 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Tc) | 10V | 290mOhm @ 6.5A, 10V | 5V @ 1mA | 27.5 nC @ 10 V | ±20V | 1050 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
R6020KNZC8MOSFET N-CHANNEL 600V 20A TO3PF Rohm Semiconductor |
3,261 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |