| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIL03N10A-TPMOSFET Micro Commercial Co |
3,399 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Ta) | 4.5V, 10V | 120mOhm @ 3A, 10V | 3V @ 250µA | 26 nC @ 10 V | ±20V | 1070 pF @ 50 V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMN3018SFGQ-13MOSFET N-CH 30V 8.5A PWRDI3333-8 Diodes Incorporated |
3,516 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.5A (Ta) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2.1V @ 250µA | 13.2 nC @ 10 V | ±25V | 697 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPP80N06S405AKSA2MOSFET N-CHANNEL_55/60V Infineon Technologies |
14,500 | - |
RFQ |
Технические |
Bulk,Tube | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPC302N15N3X7SA1MV POWER MOS Infineon Technologies |
3,083 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPT043N15N5ATMA1MV POWER MOS Infineon Technologies |
2,156 | - |
RFQ |
Технические |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSP612PH6327XTSA1SMALL SIGNAL+P-CH Infineon Technologies |
3,529 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, OptiMOS™ | Obsolete | - | - | - | 3A (Ta) | - | - | - | - | - | - | - | - | - | - |
|
BSS340NWH6327XTSA1SMALL SIGNAL+P-CH Infineon Technologies |
15,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SISC624P06X3MA1SMALL SIGNAL+P-CH Infineon Technologies |
3,177 | - |
RFQ |
Технические |
Tape & Reel (TR) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SJ438(AISIN,A,Q)MOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
3,299 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438(AISIN,Q,M)MOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
2,965 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438(CANO,A,Q)MOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
2,926 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438(CANO,Q,M)MOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
3,737 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438,MDKQ(JMOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
3,905 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438,MDKQ(MMOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
2,315 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438,Q(JMOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
3,860 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SJ438,Q(MMOSFET P-CH TO220NIS Toshiba Semiconductor and Storage |
2,354 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 5A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SK2962(T6CANO,A,FMOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
2,193 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 1A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SK2962(T6CANO,F,MMOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
3,900 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 1A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SK2962(TE6,F,M)MOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
2,921 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 1A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |
|
2SK2962,F(JMOSFET N-CH TO92MOD Toshiba Semiconductor and Storage |
2,904 | - |
RFQ |
Технические |
Bulk | - | Obsolete | - | - | - | 1A (Tj) | - | - | - | - | - | - | - | - | - | Through Hole |