| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NVMFS5C450NAFT3GMOSFET N-CH 40V 24A/102A 5DFN onsemi |
2,332 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 24A (Ta), 102A (Tc) | 10V | 3.3mOhm @ 50A, 10V | 3.5V @ 65µA | 23 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 3.6W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NTMFS4926NT1GMOSFET N-CH 30V 9A/44A 5DFN onsemi |
2,746 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 44A (Tc) | 4.5V, 10V | 7mOhm @ 30A, 10V | 2.2V @ 250µA | 17.3 nC @ 10 V | ±20V | 1004 pF @ 15 V | - | 920mW (Ta), 21.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RW1C020UNT2RMOSFET N-CH 20V 2A 6WEMT Rohm Semiconductor |
3,659 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 2A (Ta) | 1.5V, 4.5V | 105mOhm @ 2A, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | ±10V | 180 pF @ 10 V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount |
|
CEDM7004 BK PBFREEMOSFET N-CH 30V 1.78A SOT-883 Central Semiconductor Corp |
2,054 | - |
RFQ |
Технические |
Box | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.78A (Ta) | 1.8V, 4.5V | 460mOhm @ 200mA, 4.5V | 1V @ 250µA | 0.79 nC @ 4.5 V | 8V | 43 pF @ 25 V | - | 100mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount |
|
SIS472BDN-T1-GE3MOSFET N-CH 30V 15.3A/38.3A PPAK Vishay Siliconix |
3,293 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15.3A (Ta), 38.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5 nC @ 10 V | +20V, -16V | 1000 pF @ 15 V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AON4703MOSFET P-CH 20V 3.4A 8DFN Alpha & Omega Semiconductor Inc. |
2,304 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.4A (Ta) | 1.8V, 4.5V | 90mOhm @ 3.4A, 4.5V | 1V @ 250µA | 6.1 nC @ 4.5 V | ±8V | 540 pF @ 10 V | Schottky Diode (Isolated) | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RT1C060UNTRMOSFET N-CH 20V 6A 8TSST Rohm Semiconductor |
3,641 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 1.5V, 4.5V | 28mOhm @ 6A, 4.5V | 1V @ 1mA | 11 nC @ 4.5 V | ±10V | 870 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | Surface Mount |
|
|
AON6594MOSFET N-CH 30V 22A/35A 8DFN Alpha & Omega Semiconductor Inc. |
3,295 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 22A (Ta), 35A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.2V @ 250µA | 22 nC @ 10 V | ±20V | 1037 pF @ 15 V | - | 5W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT6011LSS-13MOSFET BVDSS: 41V~60V SO-8 T&R 2 Diodes Incorporated |
3,550 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 10.6A (Ta) | 4.5V, 10V | 11mOhm @ 10A, 10V | 2.5V @ 250µA | 22.2 nC @ 10 V | ±20V | 1072 pF @ 30 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC042N03LSGATMA1MOSFET N-CH 30V 20A/93A TDSON Infineon Technologies |
3,764 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta), 93A (Tc) | 4.5V, 10V | 4.2mOhm @ 30A, 10V | 2.2V @ 250µA | 42 nC @ 10 V | ±20V | 3500 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIHFL110TR-GE3MOSFET N-CH 100V 1.5A SOT223 Vishay Siliconix |
3,865 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQD2N90TMMOSFET N-CH 900V 1.7A DPAK onsemi |
8,534 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | QFET® | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 7.2Ohm @ 850mA, 10V | 5V @ 250µA | 15 nC @ 10 V | ±30V | 500 pF @ 25 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RSR015P03TLMOSFET P-CH 30V 1.5A TSMT3 Rohm Semiconductor |
2,833 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 1.5A (Ta) | 4V, 10V | 235mOhm @ 1.5A, 10V | - | 2.6 nC @ 5 V | ±20V | 190 pF @ 10 V | - | 1W (Ta) | - | Surface Mount |
|
FDD6670AMOSFET N-CH 30V 15A/66A DPAK onsemi |
19,903 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 66A (Tc) | 4.5V, 10V | 8mOhm @ 15A, 10V | 3V @ 250µA | 22 nC @ 5 V | ±20V | 1755 pF @ 15 V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMT68M8LSS-13MOSFET N-CHANNEL 60V 28.9A 8SO Diodes Incorporated |
2,676 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 28.9A (Tc) | 4.5V, 10V | 8.5mOhm @ 13.5A, 10V | 3V @ 250µA | 31.8 nC @ 10 V | ±20V | 2107 pF @ 30 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FCD4N60TMMOSFET N-CH 600V 3.9A DPAK onsemi |
4,337 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SuperFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.9A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6 nC @ 10 V | ±30V | 540 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDD3860MOSFET N-CH 100V 6.2A DPAK onsemi |
4,900 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6.2A (Ta) | 10V | 36mOhm @ 5.9A, 10V | 4.5V @ 250µA | 31 nC @ 10 V | ±20V | 1740 pF @ 50 V | - | 3.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC059N04LS6ATMA1MOSFET N-CH 40V 17A TDSON Infineon Technologies |
48,373 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 17A (Ta), 49A (Tc), 59A (Tc) | 4.5V, 10V | 5.9mOhm @ 50A, 10V | 2.3V @ 250µA | 9.4 nC @ 10 V | ±20V | 830 pF @ 20 V | - | 3W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
DMP4025SFG-7MOSFET P-CH 40V 4.65A PWRDI3333 Diodes Incorporated |
3,783 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 4.65A (Ta) | 4.5V, 10V | 25mOhm @ 3A, 10V | 1.8V @ 250µA | 14 nC @ 4.5 V | ±20V | 1643 pF @ 20 V | - | 810mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQA470EJ-T1_GE3MOSFET N-CH 30V 2.25A PPAK SC70 Vishay Siliconix |
2,886 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.25A (Tc) | 2.5V, 4.5V | 65mOhm @ 3A, 4.5V | 1.1V @ 250µA | 6 nC @ 4.5 V | ±12V | 440 pF @ 20 V | - | 13.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |