| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DN2535N3-GMOSFET N-CH 350V 120MA TO92 Microchip Technology |
1,430 | - |
RFQ |
Технические |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQU5P20TUMOSFET P-CH 200V 3.7A IPAK onsemi |
8,553 | - |
RFQ |
Технические |
Tube | QFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 200 V | 3.7A (Tc) | 10V | 1.4Ohm @ 1.85A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±30V | 430 pF @ 25 V | - | 2.5W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
SPD04N50C3ATMA1MOSFET N-CH 500V 4.5A TO252-3 Infineon Technologies |
7,890 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
TSM230N06CP ROGMOSFET N-CHANNEL 60V 34A TO252 Taiwan Semiconductor Corporation |
59,800 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 34A (Tc) | 4.5V, 10V | 23mOhm @ 20A, 10V | 2.5V @ 250µA | 28 nC @ 10 V | ±20V | 1680 pF @ 25 V | - | 104W (Tc) | 150°C (TJ) | Surface Mount |
|
FQU13N06LTUMOSFET N-CH 60V 11A IPAK onsemi |
9,108 | - |
RFQ |
Технические |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 11A (Tc) | 5V, 10V | 115mOhm @ 5.5A, 10V | 2.5V @ 250µA | 6.4 nC @ 5 V | ±20V | 350 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPD50R280CEAUMA1MOSFET N-CH 550V 13A TO252 Infineon Technologies |
3,574 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 550 V | 13A (Ta) | 13V | 280mOhm @ 4.2A, 13V | 3.5V @ 350µA | 32.6 nC @ 10 V | ±20V | 773 pF @ 100 V | - | 119W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFR4104TRPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
15,448 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRLU024NPBFMOSFET N-CH 55V 17A IPAK Infineon Technologies |
2,947 | - |
RFQ |
Технические |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
DN2540N3-GMOSFET N-CH 400V 120MA TO92 Microchip Technology |
1,760 | - |
RFQ |
Технические |
Bag | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 120mA (Tj) | 0V | 25Ohm @ 120mA, 0V | - | - | ±20V | 300 pF @ 25 V | Depletion Mode | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXFD23N60Q-72MOSFET N-CHANNEL 600V DIE IXYS |
3,905 | - |
RFQ |
Bulk | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | |
|
IXFD24N50Q-72MOSFET N-CH IXYS |
2,082 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
IXFD26N50Q-72MOSFET N-CHANNEL 500V DIE IXYS |
2,697 | - |
RFQ |
Bulk | HiPerFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | - | - | - | - | - | - | - | - | - | - | - | |
|
IRLZ24NPBFMOSFET N-CH 55V 18A TO220AB Infineon Technologies |
18,506 | - |
RFQ |
Технические |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
MCU28P10Y-TPP-CHANNEL MOSFET,DPAK Micro Commercial Co |
4,700 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 28A | 4.5V, 10V | 52mOhm @ 15A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | ±20V | 2100 pF @ 50 V | - | 96W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IXFD26N60Q-8XQMOSFET N-CH IXYS |
3,237 | - |
RFQ |
Bulk | - | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
BSC072N08NS5ATMA1MOSFET N-CH 80V 74A TDSON Infineon Technologies |
32,505 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 74A (Tc) | 6V, 10V | 7.2mOhm @ 37A, 10V | 3.8V @ 36µA | 29 nC @ 10 V | ±20V | 2100 pF @ 40 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPD60N10S4L12ATMA1MOSFET N-CH 100V 60A TO252-3 Infineon Technologies |
87,473 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 60A (Tc) | 4.5V, 10V | 12mOhm @ 60A, 10V | 2.1V @ 46µA | 49 nC @ 10 V | ±16V | 3170 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFU120NPBFMOSFET N-CH 100V 9.4A IPAK Infineon Technologies |
8,562 | - |
RFQ |
Технические |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.4A (Tc) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
DMN3024LSS-13MOSFET N-CH 30V 6.4A 8SO Diodes Incorporated |
3,279 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6.4A (Ta) | 4.5V, 10V | 24mOhm @ 7A, 10V | 3V @ 250µA | 12.9 nC @ 10 V | ±20V | 608 pF @ 15 V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMTH4014LFVWQ-7MOSFET BVDSS: 31V~40V POWERDI333 Diodes Incorporated |
2,421 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 11.5A (Ta), 49.8A (Tc) | 4.5V, 10V | 13.7mOhm @ 20A, 10V | 3V @ 250µA | 11.2 nC @ 10 V | ±20V | 750 pF @ 20 V | - | 3.1W | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |