Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ48NPBF

IRFZ48NPBF

MOSFET N-CH 55V 64A TO220AB

Infineon Technologies
9,110 -

RFQ

IRFZ48NPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
CSD17559Q5

CSD17559Q5

MOSFET N-CH 30V 40A/100A 8VSON

Texas Instruments
3,921 -

RFQ

CSD17559Q5

Технические

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta), 100A (Tc) 4.5V, 10V 1.15mOhm @ 40A, 10V 1.7V @ 250µA 51 nC @ 4.5 V ±20V 9200 pF @ 15 V - 3.2W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL520PBF

IRL520PBF

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
1,100 -

RFQ

IRL520PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) 4V, 5V 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF3860T

FDPF3860T

MOSFET N-CH 100V 20A TO220F

onsemi
1,271 -

RFQ

FDPF3860T

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 10V 38.2mOhm @ 5.9A, 10V 4.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 33.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS030N06B

FDMS030N06B

MOSFET N-CH 60V 22.1A/100A 8PQFN

onsemi
3,416 -

RFQ

FDMS030N06B

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 22.1A (Ta), 100A (Tc) 10V 3mOhm @ 50A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 7560 pF @ 30 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44VPBF

IRFZ44VPBF

MOSFET N-CH 60V 55A TO220AB

Infineon Technologies
3,219 -

RFQ

IRFZ44VPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 16.5mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1812 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU110PBF

IRLU110PBF

MOSFET N-CH 100V 4.3A TO251AA

Vishay Siliconix
1,207 -

RFQ

IRLU110PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
PSMN017-30PL,127

PSMN017-30PL,127

MOSFET N-CH 30V 32A TO220AB

Nexperia USA Inc.
1,156 -

RFQ

PSMN017-30PL,127

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Tc) 4.5V, 10V 17mOhm @ 10A, 10V 2.15V @ 1mA 10.7 nC @ 10 V ±20V 552 pF @ 15 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
TN0702N3-G

TN0702N3-G

MOSFET N-CH 20V 530MA TO92-3

Microchip Technology
6,557 -

RFQ

TN0702N3-G

Технические

Bag - Active N-Channel MOSFET (Metal Oxide) 20 V 530mA (Tj) 2V, 5V 1.3Ohm @ 500mA, 5V 1V @ 1mA - ±20V 200 pF @ 20 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3415STRLPBF

IRF3415STRLPBF

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
4,029 -

RFQ

IRF3415STRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44EPBF

IRFZ44EPBF

MOSFET N-CH 60V 48A TO220AB

Infineon Technologies
6,847 -

RFQ

IRFZ44EPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN015-60PS,127

PSMN015-60PS,127

MOSFET N-CH 60V 50A TO220AB

Nexperia USA Inc.
5,651 -

RFQ

PSMN015-60PS,127

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 14.8mOhm @ 15A, 10V 4V @ 1mA 20.9 nC @ 10 V ±20V 1220 pF @ 30 V - 86W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN4R3-30PL,127

PSMN4R3-30PL,127

MOSFET N-CH 30V 100A TO220AB

Nexperia USA Inc.
1,327 -

RFQ

PSMN4R3-30PL,127

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 4.3mOhm @ 15A, 10V 2.15V @ 1mA 41.5 nC @ 10 V ±20V 2400 pF @ 12 V - 103W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF730PBF

IRF730PBF

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
11,006 -

RFQ

IRF730PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB2552

FDB2552

MOSFET N-CH 150V 5A/37A TO263AB

onsemi
2,230 -

RFQ

FDB2552

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Ta), 37A (Tc) 6V, 10V 36mOhm @ 16A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2800 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010EPBF

IRF1010EPBF

MOSFET N-CH 60V 84A TO220AB

Infineon Technologies
7,574 -

RFQ

IRF1010EPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF7P20

FQPF7P20

MOSFET P-CH 200V 5.2A TO220F

onsemi
1,336 -

RFQ

FQPF7P20

Технические

Tube QFET® Active P-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 690mOhm @ 2.6A, 10V 5V @ 250µA 25 nC @ 10 V ±30V 770 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB7446PBF

IRFB7446PBF

MOSFET N-CH 40V 120A TO220AB

Infineon Technologies
4,904 -

RFQ

IRFB7446PBF

Технические

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 3.3mOhm @ 70A, 10V 3.9V @ 100µA 93 nC @ 10 V ±20V 3183 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC037N08NS5ATMA1

BSC037N08NS5ATMA1

MOSFET N-CH 80V 100A TDSON

Infineon Technologies
11,623 -

RFQ

BSC037N08NS5ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 6V, 10V 3.7mOhm @ 50A, 10V 3.8V @ 72µA 58 nC @ 10 V ±20V 4200 pF @ 40 V - 2.5W (Ta), 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFD9110PBF

IRFD9110PBF

MOSFET P-CH 100V 700MA 4DIP

Vishay Siliconix
1,999 -

RFQ

IRFD9110PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 700mA (Ta) 10V 1.2Ohm @ 420mA, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
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