Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF510SPBF

IRF510SPBF

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
22,651 -

RFQ

IRF510SPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STD16N65M5

STD16N65M5

MOSFET N-CH 650V 12A DPAK

STMicroelectronics
8,587 -

RFQ

STD16N65M5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 299mOhm @ 6A, 10V 5V @ 250µA 45 nC @ 10 V ±25V 1250 pF @ 100 V - 90W (Tc) 150°C (TJ) Surface Mount
STF100N6F7

STF100N6F7

MOSFET N-CH 60V 46A TO220FP

STMicroelectronics
1,476 -

RFQ

STF100N6F7

Технические

Tube STripFET™ F7 Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 10V 5.6mOhm @ 23A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1980 pF @ 25 V - 25W (Tc) -55°C ~ 175°C (TJ) Through Hole
PHP79NQ08LT,127

PHP79NQ08LT,127

MOSFET N-CH 75V 73A TO220AB

Nexperia USA Inc.
6,224 -

RFQ

PHP79NQ08LT,127

Технические

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 73A (Tc) 10V 16mOhm @ 25A, 10V 2V @ 1mA 30 nC @ 5 V ±15V 3026 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR9020PBF

IRFR9020PBF

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
2,331 -

RFQ

IRFR9020PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF3710PBF

IRF3710PBF

MOSFET N-CH 100V 57A TO220AB

Infineon Technologies
1,359 -

RFQ

IRF3710PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34PBF

IRFZ34PBF

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
10,552 -

RFQ

IRFZ34PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
STF13N60M2

STF13N60M2

MOSFET N-CH 600V 11A TO220FP

STMicroelectronics
944 -

RFQ

STF13N60M2

Технические

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 5.5A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 580 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
DMPH6050SFG-7

DMPH6050SFG-7

MOSFET BVDSS: 41V-60V POWERDI333

Diodes Incorporated
2,161 -

RFQ

DMPH6050SFG-7

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 6.1A (Ta), 18A (Tc) 4.5V, 10V 50mOhm @ 7A, 10V 3V @ 250µA 24.1 nC @ 10 V ±20V 1.293 pF @ 30 V - 3.2W -55°C ~ 175°C (TJ) Surface Mount
TPC8125,LQ(S

TPC8125,LQ(S

MOSFET P-CH 30V 10A 8SOP

Toshiba Semiconductor and Storage
3,761 -

RFQ

TPC8125,LQ(S

Технические

Tape & Reel (TR) U-MOSVI Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13mOhm @ 5A, 10V 2V @ 500µA 64 nC @ 10 V +20V, -25V 2580 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
SIHFR9014-GE3

SIHFR9014-GE3

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,324 -

RFQ

SIHFR9014-GE3

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOI444

AOI444

MOSFET N-CH 60V 4A/12A TO251A

Alpha & Omega Semiconductor Inc.
2,335 -

RFQ

AOI444

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 4A (Ta), 12A (Tc) 4.5V, 10V 60mOhm @ 12A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 540 pF @ 30 V - 2.1W (Ta), 20W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMTH8028LFVW-7

DMTH8028LFVW-7

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated
2,706 -

RFQ

DMTH8028LFVW-7

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 27A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V 2.5V @ 250µA 10.4 nC @ 10 V ±20V 631 pF @ 40 V - 1.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
DMTH8028LFVW-13

DMTH8028LFVW-13

MOSFET BVDSS: 61V~100V POWERDI33

Diodes Incorporated
2,522 -

RFQ

DMTH8028LFVW-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 27A (Tc) 4.5V, 10V 25mOhm @ 5A, 10V 2.5V @ 250µA 10.4 nC @ 10 V ±20V 631 pF @ 40 V - 1.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
NTLUS3A18PZTBG

NTLUS3A18PZTBG

MOSFET P-CH 20V 5.1A 6UDFN

onsemi
2,493 -

RFQ

NTLUS3A18PZTBG

Технические

Tape & Reel (TR),Cut Tape (CT) µCool™ Active P-Channel MOSFET (Metal Oxide) 20 V 5.1A (Ta) 1.5V, 4.5V 18mOhm @ 7A, 4.5V 1V @ 250µA 28 nC @ 4.5 V ±8V 2240 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP6110SVTQ-13

DMP6110SVTQ-13

MOSFET P-CH 60V 7.3A TSOT26

Diodes Incorporated
2,901 -

RFQ

DMP6110SVTQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 7.3A (Ta) 4.5V, 10V 105mOhm @ 4.5A, 10V 3V @ 250µA 17.2 nC @ 10 V ±20V 969 pF @ 30 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF2807PBF

IRF2807PBF

MOSFET N-CH 75V 82A TO220AB

Infineon Technologies
5,621 -

RFQ

IRF2807PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
TSM10NB60CI C0G

TSM10NB60CI C0G

MOSFET N-CH 600V 10A ITO220AB

Taiwan Semiconductor Corporation
2,179 -

RFQ

TSM10NB60CI C0G

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 750mOhm @ 5A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1820 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM120N10PQ56 RLG

TSM120N10PQ56 RLG

MOSFET N-CH 100V 58A 8PDFN

Taiwan Semiconductor Corporation
2,464 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 58A (Tc) 10V 12mOhm @ 30A, 10V 4V @ 250µA 145 nC @ 10 V ±20V 3902 pF @ 30 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM120NA03CR RLG

TSM120NA03CR RLG

MOSFET N-CH 30V 39A 8PDFN

Taiwan Semiconductor Corporation
3,784 -

RFQ

TSM120NA03CR RLG

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 39A (Tc) 4.5V, 10V 11.7mOhm @ 11A, 10V 2.5V @ 250µA 9.2 nC @ 10 V ±20V 562 pF @ 15 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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