Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1405ZPBF

IRF1405ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,685 -

RFQ

IRF1405ZPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB260NPBF

IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

Infineon Technologies
934 -

RFQ

IRFB260NPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4220 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF18N50T

FDPF18N50T

MOSFET N-CH 500V 18A TO220F

onsemi
683 -

RFQ

FDPF18N50T

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 265mOhm @ 9A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2860 pF @ 25 V - 38.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF33N25T

FDPF33N25T

MOSFET N-CH 250V 33A TO220F

onsemi
8,179 -

RFQ

FDPF33N25T

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 250 V 33A (Tc) 10V 94mOhm @ 16.5A, 10V 5V @ 250µA 48 nC @ 10 V ±30V 2135 pF @ 25 V - 37W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R180P7XKSA1

IPP60R180P7XKSA1

MOSFET N-CH 650V 18A TO220-3

Infineon Technologies
2,000 -

RFQ

IPP60R180P7XKSA1

Технические

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP064NPBF

IRFP064NPBF

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies
7,733 -

RFQ

IRFP064NPBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P03P4L04AKSA1

IPP80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies
457 -

RFQ

IPP80P03P4L04AKSA1

Технические

Tube OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004PBF

IRL1004PBF

MOSFET N-CH 40V 130A TO220AB

Infineon Technologies
2,206 -

RFQ

IRL1004PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW9NK95Z

STW9NK95Z

MOSFET N-CH 950V 7A TO247

STMicroelectronics
349 -

RFQ

STW9NK95Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 950 V 7A (Tc) 10V 1.38Ohm @ 3.6A, 10V 4.5V @ 100µA 56 nC @ 10 V ±30V 2256 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP9240PBF

IRFP9240PBF

MOSFET P-CH 200V 12A TO247-3

Vishay Siliconix
972 -

RFQ

IRFP9240PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 12A (Tc) 10V 500mOhm @ 7.2A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
PHP191NQ06LT,127

PHP191NQ06LT,127

MOSFET N-CH 55V 75A TO220AB

Nexperia USA Inc.
4,218 -

RFQ

PHP191NQ06LT,127

Технические

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 3.7mOhm @ 25A, 10V 2V @ 1mA 95.6 nC @ 5 V ±15V 7665 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410PBF

IRFB4410PBF

MOSFET N-CH 100V 88A TO220AB

Infineon Technologies
7,510 -

RFQ

IRFB4410PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP140N8F7

STP140N8F7

MOSFET N-CH 80V 90A TO220

STMicroelectronics
249 -

RFQ

STP140N8F7

Технические

Tube DeepGATE™, STripFET™ VII Active N-Channel MOSFET (Metal Oxide) 80 V 90A (Tc) 10V 4.3mOhm @ 45A, 10V 4.5V @ 250µA 96 nC @ 10 V ±20V 6340 pF @ 40 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
DMT3006LFV-13

DMT3006LFV-13

MOSFET N-CH 30V 60A POWERDI3333

Diodes Incorporated
2,116 -

RFQ

DMT3006LFV-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 7mOhm @ 9A, 10V 3V @ 250µA 8.4 nC @ 10 V ±20V 1155 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT3006LFV-7

DMT3006LFV-7

MOSFET N-CH 30V 60A POWERDI3333

Diodes Incorporated
2,919 -

RFQ

DMT3006LFV-7

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 7mOhm @ 9A, 10V 3V @ 250µA 8.4 nC @ 10 V ±20V 1155 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
US5U29TR

US5U29TR

MOSFET P-CH 20V 1A TUMT5

Rohm Semiconductor
2,249 -

RFQ

US5U29TR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 390mOhm @ 1A, 4.5V 2V @ 1mA 2.1 nC @ 5 V ±12V 150 pF @ 10 V Schottky Diode (Isolated) 1W (Ta) 150°C (TJ) Surface Mount
DMP2021UFDF-13

DMP2021UFDF-13

MOSFET P-CH 20V 9A 6UDFN

Diodes Incorporated
2,487 -

RFQ

DMP2021UFDF-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.5V, 4.5V 16mOhm @ 7A, 4.5V 1V @ 250µA 59 nC @ 8 V ±8V 2760 pF @ 15 V - 730mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP6110SVTQ-7

DMP6110SVTQ-7

MOSFET P-CH 60V 7.3A TSOT26

Diodes Incorporated
3,686 -

RFQ

DMP6110SVTQ-7

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 60 V 7.3A (Ta) 4.5V, 10V 105mOhm @ 4.5A, 10V 3V @ 250µA 17.2 nC @ 10 V ±20V 969 pF @ 30 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RZL035P01TR

RZL035P01TR

MOSFET P-CH 12V 3.5A TUMT6

Rohm Semiconductor
2,969 -

RFQ

RZL035P01TR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 3.5A (Ta) 1.5V, 4.5V 36mOhm @ 3.5A, 4.5V 1V @ 1mA - ±10V 1940 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
RQ1C075UNTR

RQ1C075UNTR

MOSFET N-CH 20V 7.5A TSMT8

Rohm Semiconductor
3,787 -

RFQ

RQ1C075UNTR

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 7.5A (Ta) 1.5V, 4.5V 16mOhm @ 7.5A, 4.5V 1V @ 1mA 18 nC @ 4.5 V ±10V 1400 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
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