| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFB4228PBFMOSFET N-CH 150V 83A TO220AB Infineon Technologies |
745 | - |
RFQ |
Технические |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±30V | 4530 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
FDP025N06MOSFET N-CH 60V 120A TO220-3 onsemi |
1,354 | - |
RFQ |
Технические |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.5mOhm @ 75A, 10V | 4.5V @ 250µA | 226 nC @ 10 V | ±20V | 14885 pF @ 25 V | - | 395W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FCP22N60NMOSFET N-CH 600V 22A TO220-3 onsemi |
651 | - |
RFQ |
Технические |
Tube | SupreMOS™ | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 22A (Tc) | 10V | 165mOhm @ 11A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±45V | 1950 pF @ 100 V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFP460APBFMOSFET N-CH 500V 20A TO247-3 Vishay Siliconix |
1,796 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 105 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
CSD18536KCSMOSFET N-CH 60V 200A TO220-3 Texas Instruments |
777 | - |
RFQ |
Технические |
Tube | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 200A (Ta) | 4.5V, 10V | 1.6mOhm @ 100A, 10V | 2.2V @ 250µA | 108 nC @ 10 V | ±20V | 11430 pF @ 30 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFB18N50KPBFMOSFET N-CH 500V 17A TO220AB Vishay Siliconix |
2,987 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 17A (Tc) | 10V | 290mOhm @ 10A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±30V | 2830 pF @ 25 V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFB3004PBFMOSFET N-CH 40V 195A TO220AB Infineon Technologies |
1,807 | - |
RFQ |
Технические |
Tube | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
FDP020N06B-F102MOSFET N-CH 60V 120A TO220-3 onsemi |
2,150 | - |
RFQ |
Технические |
Tube | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2mOhm @ 100A, 10V | 4.5V @ 250µA | 268 nC @ 10 V | ±20V | 20930 pF @ 30 V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
|
IRFB20N50KPBFMOSFET N-CH 500V 20A TO220AB Vishay Siliconix |
2,409 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 250mOhm @ 12A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 2870 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
STW15NK50ZMOSFET N-CH 500V 14A TO247-3 STMicroelectronics |
450 | - |
RFQ |
Технические |
Tube | SuperMESH™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 14A (Tc) | 10V | 340mOhm @ 7A, 10V | 4.5V @ 100µA | 106 nC @ 10 V | ±30V | 2260 pF @ 25 V | - | 160W (Tc) | -50°C ~ 150°C (TJ) | Through Hole |
|
IRFP460LCPBFMOSFET N-CH 500V 20A TO247-3 Vishay Siliconix |
450 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±30V | 3600 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPW90R500C3XKSA1MOSFET N-CH 900V 11A TO247-3 Infineon Technologies |
1,155 | - |
RFQ |
Технические |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68 nC @ 10 V | ±20V | 1700 pF @ 100 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPP60R099P7XKSA1MOSFET N-CH 600V 31A TO220-3 Infineon Technologies |
828 | - |
RFQ |
Технические |
Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 31A (Tc) | 10V | 99mOhm @ 10.5A, 10V | 4V @ 530µA | 45 nC @ 10 V | ±20V | 1952 pF @ 400 V | - | 117W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
UF3C120150B7S1200V/150MOHM, SIC, FAST CASCODE UnitedSiC |
952 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 1200 V | 17A (Tc) | 12V | 180mOhm @ 5A, 12V | 5.5V @ 10mA | 25.7 nC @ 12 V | ±25V | 738 pF @ 100 V | Super Junction | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFP264PBFMOSFET N-CH 250V 38A TO247-3 Vishay Siliconix |
1,386 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 38A (Tc) | 10V | 75mOhm @ 23A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 5400 pF @ 25 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQA65N20MOSFET N-CH 200V 65A TO3PN onsemi |
208 | - |
RFQ |
Технические |
Tube | QFET® | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 200 V | 65A (Tc) | 10V | 32mOhm @ 32.5A, 10V | 5V @ 250µA | 200 nC @ 10 V | ±30V | 7900 pF @ 25 V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
APT8M100BMOSFET N-CH 1000V 8A TO247 Microchip Technology |
641 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 8A (Tc) | 10V | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60 nC @ 10 V | ±30V | 1885 pF @ 25 V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXFP38N30X3MMOSFET N-CH 300V 38A TO220 IXYS |
923 | - |
RFQ |
Технические |
Tube | HiPerFET™, Ultra X3 | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 38A (Tc) | - | - | - | - | - | - | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
UF3C065080B7SSICFET N-CH 650V 27A D2PAK-7 UnitedSiC |
2,870 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Cascode SiCJFET) | 650 V | 27A (Tc) | - | 105mOhm @ 20A, 12V | 6V @ 10mA | 23 nC @ 12 V | ±25V | 760 pF @ 100 V | - | 136.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXFH20N50P3MOSFET N-CH 500V 20A TO247AD IXYS |
179 | - |
RFQ |
Технические |
Tube | HiPerFET™, Polar3™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 1.5mA | 36 nC @ 10 V | ±30V | 1800 pF @ 25 V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |