Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB4228PBF

IRFB4228PBF

MOSFET N-CH 150V 83A TO220AB

Infineon Technologies
745 -

RFQ

IRFB4228PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
FDP025N06

FDP025N06

MOSFET N-CH 60V 120A TO220-3

onsemi
1,354 -

RFQ

FDP025N06

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.5mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP22N60N

FCP22N60N

MOSFET N-CH 600V 22A TO220-3

onsemi
651 -

RFQ

FCP22N60N

Технические

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 165mOhm @ 11A, 10V 4V @ 250µA 45 nC @ 10 V ±45V 1950 pF @ 100 V - 205W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460APBF

IRFP460APBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
1,796 -

RFQ

IRFP460APBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 105 nC @ 10 V ±30V 3100 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
CSD18536KCS

CSD18536KCS

MOSFET N-CH 60V 200A TO220-3

Texas Instruments
777 -

RFQ

CSD18536KCS

Технические

Tube NexFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 200A (Ta) 4.5V, 10V 1.6mOhm @ 100A, 10V 2.2V @ 250µA 108 nC @ 10 V ±20V 11430 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB18N50KPBF

IRFB18N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
2,987 -

RFQ

IRFB18N50KPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 120 nC @ 10 V ±30V 2830 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB3004PBF

IRFB3004PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
1,807 -

RFQ

IRFB3004PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP020N06B-F102

FDP020N06B-F102

MOSFET N-CH 60V 120A TO220-3

onsemi
2,150 -

RFQ

FDP020N06B-F102

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2mOhm @ 100A, 10V 4.5V @ 250µA 268 nC @ 10 V ±20V 20930 pF @ 30 V - 333W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB20N50KPBF

IRFB20N50KPBF

MOSFET N-CH 500V 20A TO220AB

Vishay Siliconix
2,409 -

RFQ

IRFB20N50KPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 250mOhm @ 12A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 2870 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW15NK50Z

STW15NK50Z

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics
450 -

RFQ

STW15NK50Z

Технические

Tube SuperMESH™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 340mOhm @ 7A, 10V 4.5V @ 100µA 106 nC @ 10 V ±30V 2260 pF @ 25 V - 160W (Tc) -50°C ~ 150°C (TJ) Through Hole
IRFP460LCPBF

IRFP460LCPBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
450 -

RFQ

IRFP460LCPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 270mOhm @ 12A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3600 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R500C3XKSA1

IPW90R500C3XKSA1

MOSFET N-CH 900V 11A TO247-3

Infineon Technologies
1,155 -

RFQ

IPW90R500C3XKSA1

Технические

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099P7XKSA1

IPP60R099P7XKSA1

MOSFET N-CH 600V 31A TO220-3

Infineon Technologies
828 -

RFQ

IPP60R099P7XKSA1

Технические

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C120150B7S

UF3C120150B7S

1200V/150MOHM, SIC, FAST CASCODE

UnitedSiC
952 -

RFQ

UF3C120150B7S

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 1200 V 17A (Tc) 12V 180mOhm @ 5A, 12V 5.5V @ 10mA 25.7 nC @ 12 V ±25V 738 pF @ 100 V Super Junction 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP264PBF

IRFP264PBF

MOSFET N-CH 250V 38A TO247-3

Vishay Siliconix
1,386 -

RFQ

IRFP264PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 38A (Tc) 10V 75mOhm @ 23A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 5400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA65N20

FQA65N20

MOSFET N-CH 200V 65A TO3PN

onsemi
208 -

RFQ

FQA65N20

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 65A (Tc) 10V 32mOhm @ 32.5A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7900 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT8M100B

APT8M100B

MOSFET N-CH 1000V 8A TO247

Microchip Technology
641 -

RFQ

APT8M100B

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.8Ohm @ 4A, 10V 5V @ 1mA 60 nC @ 10 V ±30V 1885 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP38N30X3M

IXFP38N30X3M

MOSFET N-CH 300V 38A TO220

IXYS
923 -

RFQ

IXFP38N30X3M

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) - - - - - - - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
UF3C065080B7S

UF3C065080B7S

SICFET N-CH 650V 27A D2PAK-7

UnitedSiC
2,870 -

RFQ

UF3C065080B7S

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Cascode SiCJFET) 650 V 27A (Tc) - 105mOhm @ 20A, 12V 6V @ 10mA 23 nC @ 12 V ±25V 760 pF @ 100 V - 136.4W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFH20N50P3

IXFH20N50P3

MOSFET N-CH 500V 20A TO247AD

IXYS
179 -

RFQ

IXFH20N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Продукты
1800+
1800+ производители
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15,000+ Складские запасы
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