| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMW65R027M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |
136 | - |
RFQ |
Tube | - | Active | - | - | - | 47A (Tc) | - | - | - | - | - | - | - | - | - | - | |
|
IPW60R017C7XKSA1HIGH POWER_NEW Infineon Technologies |
224 | - |
RFQ |
Технические |
Tube | CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 109A (Tc) | 10V | 17mOhm @ 58.2A, 10V | 4V @ 2.91mA | 240 nC @ 10 V | ±20V | 9890 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NTHL020N090SC1SICFET N-CH 900V 118A TO247-3 onsemi |
269 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 118A (Tc) | 15V | 28mOhm @ 60A, 15V | 4.3V @ 20mA | 196 nC @ 15 V | +19V, -10V | 4415 pF @ 450 V | - | 503W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
TP65H015G5WS650 V 95 A GAN FET Transphorm |
456 | - |
RFQ |
Технические |
Tube | SuperGaN™ | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 93A (Tc) | 10V | 18mOhm @ 60A, 10V | 4.8V @ 2mA | 100 nC @ 10 V | ±20V | 5218 pF @ 400 V | - | 266W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTN102N65X2MOSFET N-CH 650V 76A SOT227 IXYS |
220 | - |
RFQ |
Технические |
Tube | Ultra X2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 76A (Tc) | 10V | 30mOhm @ 51A, 10V | 5V @ 250µA | 152 nC @ 10 V | ±30V | 10900 pF @ 25 V | - | 595AW (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount |
|
C3M0021120KSICFET N-CH 1200V 100A TO247-4L Wolfspeed, Inc. |
5,065 | - |
RFQ |
Технические |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 162 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0021120DSICFET N-CH 1200V 100A TO247-3 Wolfspeed, Inc. |
2,372 | - |
RFQ |
Технические |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 100A (Tc) | 15V | 28.8mOhm @ 50A, 15V | 3.6V @ 17.7mA | 160 nC @ 15 V | +15V, -4V | 4818 pF @ 1000 V | - | 469W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
C3M0030090KSICFET N-CH 900V 63A TO247-4 Wolfspeed, Inc. |
4,934 | - |
RFQ |
Технические |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 900 V | 63A (Tc) | 15V | 39mOhm @ 35A, 15V | 3.5V @ 11mA | 87 nC @ 15 V | +15V, -4V | 1864 pF @ 600 V | - | 149W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IXTX46N50LMOSFET N-CH 500V 46A PLUS247-3 IXYS |
1,140 | - |
RFQ |
Технические |
Tube | Linear | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 46A (Tc) | 20V | 160mOhm @ 500mA, 20V | 6V @ 250µA | 260 nC @ 15 V | ±30V | 7000 pF @ 25 V | - | 700W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C2M0040120DSICFET N-CH 1200V 60A TO247-3 Wolfspeed, Inc. |
2,114 | - |
RFQ |
Технические |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 20V | 52mOhm @ 40A, 20V | 2.8V @ 10mA | 115 nC @ 20 V | +25V, -10V | 1893 pF @ 1000 V | - | 330W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
|
C3M0015065DSICFET N-CH 650V 120A TO247-3 Wolfspeed, Inc. |
820 | - |
RFQ |
Технические |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 120A (Tc) | 15V | 21mOhm @ 55.8A, 15V | 3.6V @ 15.5mA | 188 nC @ 15 V | +15V, -4V | 5011 pF @ 400 V | - | 416W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
DMT4008LFV-13MOSFET N-CH 40V PWRDI3333 Diodes Incorporated |
2,775 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.1A (Ta), 54.8A (Tc) | 4.5V, 10V | 7.9mOhm @ 12A, 10V | 3V @ 250µA | 17.1 nC @ 10 V | ±20V | 1179 pF @ 20 V | - | 1.9W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SCT3030KLHRC11SICFET N-CH 1200V 72A TO247N Rohm Semiconductor |
779 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 72A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 131 nC @ 18 V | +22V, -4V | 2222 pF @ 800 V | - | 339W | 175°C (TJ) | Through Hole |
|
|
C2M0025120DSICFET N-CH 1200V 90A TO247-3 Wolfspeed, Inc. |
7,165 | - |
RFQ |
Технические |
Tube | Z-FET™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 90A (Tc) | 20V | 34mOhm @ 50A, 20V | 2.4V @ 10mA | 161 nC @ 20 V | +25V, -10V | 2788 pF @ 1000 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMT4008LFV-7MOSFET N-CH 40V PWRDI3333 Diodes Incorporated |
3,002 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12.1A (Ta), 54.8A (Tc) | 4.5V, 10V | 7.9mOhm @ 12A, 10V | 3V @ 250µA | 17.1 nC @ 10 V | ±20V | 1179 pF @ 20 V | - | 1.9W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C3M0016120KSICFET N-CH 1.2KV 115A TO247-4 Wolfspeed, Inc. |
584 | - |
RFQ |
Технические |
Tube | C3M™ | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 115A (Tc) | 15V | 22.3mOhm @ 75A, 15V | 3.6V @ 23mA | 211 nC @ 15 V | +15V, -4V | 6085 pF @ 1000 V | - | 556W (Tc) | -40°C ~ 175°C (TJ) | Through Hole |
|
SIHFR9310-GE3MOSFET P-CH 400V 1.8A DPAK Vishay Siliconix |
2,684 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 400 V | 1.8A (Tc) | 10V | 7Ohm @ 1.1A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
C2M0045170PSICFET N-CH 1700V 72A TO247-4 Wolfspeed, Inc. |
2,435 | - |
RFQ |
Технические |
Tube | C2M™ | Not For New Designs | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 72A (Tc) | 20V | 59mOhm @ 50A, 20V | 4V @ 18mA | 188 nC @ 20 V | +25V, -10V | 3672 pF @ 1000 V | - | 520W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
DMTH47M2SPSWQ-13MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated |
2,415 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 73A (Tc) | 10V | 7.5mOhm @ 20A, 10V | 4V @ 250µA | 12.1 nC @ 10 V | ±20V | 897 pF @ 20 V | - | 3.3W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
DMNH6021SPSQ-13MOSFET N-CH 60V 55A PWRDI5060-8 Diodes Incorporated |
2,021 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 55A (Tc) | 4.5V, 10V | 23mOhm @ 12A, 10V | 3V @ 250µA | 19.7 nC @ 10 V | ±20V | 1016 pF @ 30 V | - | 1.6W (Ta), 53W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |