| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDMA410NZT-F130PT4 NCH 20/8V ZENER IN onsemi |
2,037 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 9.5A (Ta) | 1.5V, 4.5V | 23mOhm @ 9.5A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±8V | 1310 pF @ 10 V | - | 900mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP26M1UFG-13MOSFET BVDSS: 8V~24V POWERDI3333 Diodes Incorporated |
2,902 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 71A (Tc) | 1.5V, 4.5V | 5.5mOhm @ 15A, 4.5V | 1V @ 250µA | 164 nC @ 10 V | ±10V | 5392 pF @ 10 V | - | 1.67W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP26M1UFG-7MOSFET BVDSS: 8V~24V POWERDI3333 Diodes Incorporated |
2,397 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 71A (Tc) | 1.5V, 4.5V | 5.5mOhm @ 15A, 4.5V | 1V @ 250µA | 164 nC @ 10 V | ±10V | 5392 pF @ 10 V | - | 1.67W (Ta), 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AON7400AL_102MOSFET N-CH 30V 15A/40A 8DFN Alpha & Omega Semiconductor Inc. |
3,808 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 1380 pF @ 15 V | - | 3.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AON7400AL_103MOSFET N-CH 30V 15A/40A 8DFN Alpha & Omega Semiconductor Inc. |
3,779 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 1380 pF @ 15 V | - | 3.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
VN10LPSTZMOSFET VMOS N-CHAN TO92-3 Diodes Incorporated |
3,280 | - |
RFQ |
Технические |
Tape & Box (TB) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 270mA (Ta) | 5V, 10V | 5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 60 pF @ 25 V | - | 625mW (Ta) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF9333TRPBFMOSFET P-CH 30V 9.2A 8SO Infineon Technologies |
3,210 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 9.2A (Ta) | 4.5V, 10V | 19.4mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38 nC @ 10 V | ±20V | 1110 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NVTFS015P03P8ZTAGPT8P PORTFOLIO EXPANSION onsemi |
2,208 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 17A (Ta), 88.6A (Tc) | 4.5V, 10V | 7.5mOhm @ 12A, 10V | 3V @ 250µA | 105 nC @ 10 V | ±25V | 2706 pF @ 15 V | - | 3.2W (Ta), 88.2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
2SK2463T100MOSFET N-CH 60V 2A MPT3 Rohm Semiconductor |
3,410 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | 4V, 10V | 380mOhm @ 1A, 10V | 2.5V @ 1mA | - | ±20V | 200 pF @ 10 V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount |
|
DMTH4008LPSQ-13MOSFET N-CH 40V PWRDI5060 Diodes Incorporated |
2,426 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14.4A (Ta), 64.8A (Tc) | 5V, 10V | 8.8mOhm @ 10A, 10V | 3V @ 250µA | 15.3 nC @ 10 V | ±20V | 1088 pF @ 20 V | - | 2.99W (Ta), 55.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
IPSA70R1K4P7SAKMA1MOSFET N-CH 700V 4A TO251-3 Infineon Technologies |
18,000 | - |
RFQ |
Технические |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 4A (Tc) | 10V | 1.4Ohm @ 700mA, 10V | 3.5V @ 40µA | 4.7 nC @ 400 V | ±16V | 158 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
SSM5H16TU,LFMOSFET N-CH 30V 1.9A UFV Toshiba Semiconductor and Storage |
5,400 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | U-MOSIII | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 1.9A (Ta) | 1.8V, 4V | 133mOhm @ 1A, 4V | 1V @ 1mA | 1.9 nC @ 4 V | ±12V | 123 pF @ 15 V | Schottky Diode (Isolated) | 500mW (Ta) | 150°C | Surface Mount |
|
SSM6K404TU,LFMOSFET N-CH 20V 3A UF6 Toshiba Semiconductor and Storage |
5,837 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.5V, 4V | 55mOhm @ 2A, 4V | 1V @ 1mA | 5.9 nC @ 4 V | ±10V | 400 pF @ 10 V | - | 500mW (Ta) | 150°C | Surface Mount |
|
|
AON6572MOSFET N-CH 30V 36A/85A 8DFN Alpha & Omega Semiconductor Inc. |
3,899 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 36A (Ta), 85A (Tc) | 4.5V, 10V | 3.2mOhm @ 20A, 10V | 2V @ 250µA | 65 nC @ 10 V | ±12V | 3290 pF @ 15 V | - | 6.2W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMN3016LFDE-13MOSFET N-CH 30V 10A 6UDFN Diodes Incorporated |
19,958 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 12mOhm @ 11A, 10V | 2V @ 250µA | 25.1 nC @ 10 V | ±20V | 1415 pF @ 15 V | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMP2005UFG-13MOSFET P-CH 20V 89A POWERDI3333 Diodes Incorporated |
2,217 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 89A (Tc) | 1.8V, 4.5V | 4mOhm @ 15A, 4.5V | 900mV @ 250µA | 125 nC @ 10 V | ±10V | 4670 pF @ 10 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI2367DS-T1-GE3MOSFET P-CH 20V 3.8A SOT23-3 Vishay Siliconix |
8,185 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.8A (Tc) | 1.8V, 4.5V | 66mOhm @ 2.5A, 4.5V | 1V @ 250µA | 23 nC @ 8 V | ±8V | 561 pF @ 10 V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMTH6016LFVWQ-13-AMOSFET BVDSS: 41V~60V POWERDI333 Diodes Incorporated |
3,388 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 41A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 15.1 nC @ 10 V | ±20V | 939 pF @ 30 V | - | 1.17W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount, Wettable Flank |
|
DMP2005UFG-7MOSFET P-CH 20V 89A POWERDI3333 Diodes Incorporated |
2,291 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 89A (Tc) | 1.8V, 4.5V | 4mOhm @ 15A, 4.5V | 900mV @ 250µA | 125 nC @ 10 V | ±10V | 4670 pF @ 10 V | - | 2.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI1031R-T1-GE3MOSFET P-CH 20V 140MA SC75A Vishay Siliconix |
29,940 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 140mA (Ta) | 1.5V, 4.5V | 8Ohm @ 150mA, 4.5V | 1.2V @ 250µA | 1.5 nC @ 4.5 V | ±6V | - | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |