Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9530SPBF

IRF9530SPBF

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
2,560 -

RFQ

IRF9530SPBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
JANSR2N7269U

JANSR2N7269U

MOSFET N-CH 200V 26A U1

Microsemi Corporation
3,324 -

RFQ

JANSR2N7269U

Технические

Tray Military, MIL-PRF-19500/603 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 12V 110mOhm @ 26A, 12V 4V @ 1mA 170 nC @ 12 V ±20V - - 150W (Tc) -55°C ~ 150°C Surface Mount
JANSR2N7380

JANSR2N7380

MOSFET N-CH 100V 14.4A TO257

Microsemi Corporation
3,807 -

RFQ

JANSR2N7380

Технические

Tray Military, MIL-PRF-19500/614 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14.4A (Tc) 12V 200mOhm @ 14.4A, 12V 4V @ 1mA 40 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANSR2N7381

JANSR2N7381

MOSFET N-CH 200V 9.4A TO257

Microsemi Corporation
3,064 -

RFQ

JANSR2N7381

Технические

Tray Military, MIL-PRF-19500/614 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 12V 490mOhm @ 9.4A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANSR2N7389

JANSR2N7389

MOSFET P-CH 100V 6.5A TO205AF

Microsemi Corporation
3,897 -

RFQ

JANSR2N7389

Технические

Tray Military, MIL-PRF-19500/630 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Through Hole
JANSR2N7389U

JANSR2N7389U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation
2,295 -

RFQ

JANSR2N7389U

Технические

Tray Military, MIL-PRF-19500/630 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Surface Mount
DMP2088LCP3-7

DMP2088LCP3-7

MOSFET P-CH 20V 2.9A X2DSN1006-3

Diodes Incorporated
3,781 -

RFQ

DMP2088LCP3-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.9A (Ta) 1.8V, 8V 88mOhm @ 500mA, 8V 1.2V @ 250µA 1.5 nC @ 4.5 V -12V 160 pF @ 10 V - 1.13W -55°C ~ 150°C (TJ) Surface Mount
DMG7401SFGQ-7

DMG7401SFGQ-7

MOSFET P-CH 30V 9.8A PWRDI3333-8

Diodes Incorporated
2,023 -

RFQ

DMG7401SFGQ-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 9.8A (Ta) 4.5V, 20V 11mOhm @ 12A, 20V 3V @ 250µA 58 nC @ 10 V ±25V 2987 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2541UCB9-7

DMP2541UCB9-7

MOSFET P-CH 25V 3.9A U-WLB1515-9

Diodes Incorporated
2,773 -

RFQ

DMP2541UCB9-7

Технические

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 25 V 3.9A (Ta) 1.8V, 4.5V 40mOhm @ 2A, 4.5V 1.1V @ 250µA 7 nC @ 4.5 V -6V 850 pF @ 10 V - 940mW (Ta) -55°C ~ 155°C (TJ) Surface Mount
DMP3056LVT-13

DMP3056LVT-13

MOSFET P-CH 30V 4.3A TSOT-26

Diodes Incorporated
3,793 -

RFQ

DMP3056LVT-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 50mOhm @ 6A, 10V 2.1V @ 250µA 11.8 nC @ 10 V ±25V 642 pF @ 25 V - 1.38W -55°C ~ 150°C (TJ) -
DMP3056LVT-7

DMP3056LVT-7

MOSFET P-CH 30V 4.3A TSOT-26

Diodes Incorporated
2,648 -

RFQ

DMP3056LVT-7

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 50mOhm @ 6A, 10V 2.1V @ 250µA 11.8 nC @ 10 V ±25V 642 pF @ 25 V - 1.38W -55°C ~ 150°C (TJ) -
DMN3008SFGQ-7

DMN3008SFGQ-7

MOSFET N-CH 30V PWRDI3333

Diodes Incorporated
2,139 -

RFQ

DMN3008SFGQ-7

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 17.6A (Ta), 62A (Tc) 4.5V, 10V 4.4mOhm @ 13.5A, 10V 2.3V @ 250µA 86 nC @ 10 V ±20V 3690 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2035UVT-13

DMP2035UVT-13

MOSFET P-CH 20V 7.2A TSOT26

Diodes Incorporated
3,863 -

RFQ

DMP2035UVT-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Obsolete P-Channel MOSFET (Metal Oxide) 20 V 7.2A (Ta) 1.8V, 4.5V 35mOhm @ 4A, 4.5V 1.5V @ 250µA 23.1 nC @ 4.5 V ±12V 2400 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN6013LFGQ-13

DMN6013LFGQ-13

MOSFET N-CH 60V 10.3A PWRDI3333

Diodes Incorporated
3,800 -

RFQ

DMN6013LFGQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 10.3A (Ta), 45A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V 3V @ 250µA 55.4 nC @ 10 V ±20V 2577 pF @ 30 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IXFH150N25X3HV

IXFH150N25X3HV

MOSFET N-CH

IXYS
3,367 -

RFQ

IXFH150N25X3HV

Технические

Tube HiPerFET™, Ultra X3 Active - - - - - - - - - - - - - -
DMPH4025SFVWQ-13

DMPH4025SFVWQ-13

MOSFET P-CH 40V PWRDI3333

Diodes Incorporated
2,584 -

RFQ

DMPH4025SFVWQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 8.7A (Ta), 40A (Tc) 4.5V, 10V 25mOhm @ 30A, 10V 1.8V @ 250µA 38.6 nC @ 10 V ±20V 1918 pF @ 20 V - 2.3W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
IXTH06N220P3HV

IXTH06N220P3HV

MOSFET N-CH 2200V 600MA TO247HV

IXYS
3,248 -

RFQ

IXTH06N220P3HV

Технические

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2200 V 600mA (Tc) 10V 80Ohm @ 300mA, 10V 4V @ 250µA 10.4 nC @ 10 V ±20V 290 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK240N075L2

IXTK240N075L2

MOSFET N-CH 75V 240A TO264

IXYS
2,137 -

RFQ

IXTK240N075L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 7mOhm @ 120A, 10V 4.5V @ 3mA 546 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R190C7ATMA1

IPB65R190C7ATMA1

MOSFET N-CH 650V 13A D2PAK

Infineon Technologies
2,944 -

RFQ

IPB65R190C7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

MOSFET N-CH 30V 7.1A TSOP-6

Infineon Technologies
2,307 -

RFQ

BSL302SNH6327XTSA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta) 4.5V, 10V 25mOhm @ 7.1A, 10V 2V @ 30µA 6.6 nC @ 5 V ±20V 750 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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