Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM033NB04CR RLG

TSM033NB04CR RLG

MOSFET N-CH 40V 21A/121A 8PDFN

Taiwan Semiconductor Corporation
3,650 -

RFQ

TSM033NB04CR RLG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta), 121A (Tc) 10V 3.3mOhm @ 21A, 10V 4V @ 250µA 77 nC @ 10 V ±20V 5022 pF @ 20 V - 3.1W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7108DN-T1-E3

SI7108DN-T1-E3

MOSFET N-CH 20V 14A PPAK1212-8

Vishay Siliconix
2,739 -

RFQ

SI7108DN-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.9mOhm @ 22A, 10V 2V @ 250µA 30 nC @ 4.5 V ±16V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF830APBF

IRF830APBF

MOSFET N-CH 500V 5A TO220AB

Vishay Siliconix
7,518 -

RFQ

IRF830APBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF2HNK60Z

STF2HNK60Z

MOSFET N-CH 600V 2A TO220FP

STMicroelectronics
1,188 -

RFQ

STF2HNK60Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.8Ohm @ 1A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD020PBF

IRFD020PBF

MOSFET N-CH 50V 2.4A 4DIP

Vishay Siliconix
4,991 -

RFQ

IRFD020PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 2.4A (Tc) 10V 100mOhm @ 1.4A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9110PBF

IRFU9110PBF

MOSFET P-CH 100V 3.1A TO251AA

Vishay Siliconix
1,734 -

RFQ

IRFU9110PBF

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF55N06

FDPF55N06

MOSFET N-CH 60V 55A TO220F

onsemi
1,933 -

RFQ

FDPF55N06

Технические

Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 22mOhm @ 27.5A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1510 pF @ 25 V - 48W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP5NK50Z

STP5NK50Z

MOSFET N-CH 500V 4.4A TO220AB

STMicroelectronics
1,980 -

RFQ

STP5NK50Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 500 V 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4.5V @ 50µA 28 nC @ 10 V ±30V 535 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14SPBF

IRLZ14SPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
949 -

RFQ

IRLZ14SPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR5305TRL

AUIRFR5305TRL

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
23,481 -

RFQ

AUIRFR5305TRL

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
XP202A0003MR-G

XP202A0003MR-G

MOSFET P-CH 30V 3A SOT23

Torex Semiconductor Ltd
2,844 -

RFQ

XP202A0003MR-G

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Tj) 4V, 10V 45mOhm @ 1.5A, 10V 2.6V @ 1mA 10 nC @ 10 V ±20V 435 pF @ 10 V - 1W 150°C Surface Mount
DMT15H067SSS-13

DMT15H067SSS-13

MOSFET N-CH 150V 4.5A/13A 8SO

Diodes Incorporated
3,208 -

RFQ

DMT15H067SSS-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta), 13A (Tc) 10V 67mOhm @ 4.1A, 10V 4V @ 250µA 6.4 nC @ 10 V ±20V 425 pF @ 75 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TPN6R003NL,LQ

TPN6R003NL,LQ

MOSFET N CH 30V 27A 8TSON-ADV

Toshiba Semiconductor and Storage
3,508 -

RFQ

TPN6R003NL,LQ

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6mOhm @ 13.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 32W (Tc) 150°C (TJ) Surface Mount
DMT47M2SFVWQ-13

DMT47M2SFVWQ-13

MOSFET N-CH 40V PWRDI3333

Diodes Incorporated
3,915 -

RFQ

DMT47M2SFVWQ-13

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 15.4A (Ta), 49.1A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA 12.1 nC @ 10 V ±20V 897 pF @ 20 V - 2.67W (Ta), 27.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount, Wettable Flank
DMT43M8LFV-13

DMT43M8LFV-13

MOSFET N-CH 40V 87A POWERDI3333

Diodes Incorporated
3,054 -

RFQ

DMT43M8LFV-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 44.4 nC @ 10 V ±20V 3213 pF @ 20 V - 2.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT43M8LFV-7

DMT43M8LFV-7

MOSFET N-CH 40V 87A POWERDI3333

Diodes Incorporated
3,523 -

RFQ

DMT43M8LFV-7

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.5V @ 250µA 44.4 nC @ 10 V ±20V 3213 pF @ 20 V - 2.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMTH8012LPSW-13

DMTH8012LPSW-13

MOSFET N-CH 80V 53.7A PWRDI5060

Diodes Incorporated
2,454 -

RFQ

DMTH8012LPSW-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 53.7A (Tc) 4.5V, 10V 17mOhm @ 12A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1949 pF @ 40 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
AO3404_102

AO3404_102

MOSFET N-CH 30V 5A SOT23-3

Alpha & Omega Semiconductor Inc.
2,130 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 4.5V, 10V 31mOhm @ 5A, 10V 2.4V @ 250µA 6.3 nC @ 10 V ±20V 310 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXMN10A08E6QTA

ZXMN10A08E6QTA

MOSFET BVDSS: 61V~100V SOT26 T&R

Diodes Incorporated
3,701 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Ta) 6V, 10V 250mOhm @ 3.2A, 10V 4V @ 250µA 7.7 nC @ 10 V ±20V 405 pF @ 50 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD060N03LGBTMA1

IPD060N03LGBTMA1

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
3,144 -

RFQ

IPD060N03LGBTMA1

Технические

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 2300 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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