Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPG40PBF

IRFPG40PBF

MOSFET N-CH 1000V 4.3A TO247-3

Vishay Siliconix
103 -

RFQ

IRFPG40PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) 10V 3.5Ohm @ 2.6A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP38N30X3

IXFP38N30X3

MOSFET N-CH 300V 38A TO220

IXYS
258 -

RFQ

IXFP38N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 50mOhm @ 19A, 10V 4.5V @ 1mA 35 nC @ 10 V ±20V 2240 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT9M100S

APT9M100S

MOSFET N-CH 1000V 9A D3PAK

Microchip Technology
632 -

RFQ

APT9M100S

Технические

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 9A (Tc) 10V 1.4Ohm @ 5A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2605 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP360LCPBF

IRFP360LCPBF

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix
300 -

RFQ

IRFP360LCPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 3400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ22N50P

IXTQ22N50P

MOSFET N-CH 500V 22A TO3P

IXYS
2,329 -

RFQ

IXTQ22N50P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 270mOhm @ 11A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 2630 pF @ 25 V - 350W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP33N60E-GE3

SIHP33N60E-GE3

MOSFET N-CH 600V 33A TO220AB

Vishay Siliconix
708 -

RFQ

SIHP33N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 99mOhm @ 16.5A, 10V 4V @ 250µA 150 nC @ 10 V ±30V 3508 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
C2M1000170J-TR

C2M1000170J-TR

SICFET N-CH 1700V 5.3A D2PAK-7

Wolfspeed, Inc.
4,800 -

RFQ

C2M1000170J-TR

Технические

Tape & Reel (TR) C2M™ Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.3A (Tc) 20V 1.4Ohm @ 2A, 20V 3.1V @ 500µA (Typ) 13 nC @ 20 V +25V, -10V 200 pF @ 1000 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
C3M0280090J

C3M0280090J

SICFET N-CH 900V 11A D2PAK-7

Wolfspeed, Inc.
5,894 -

RFQ

C3M0280090J

Технические

Tube C3M™ Active N-Channel SiCFET (Silicon Carbide) 900 V 11A (Tc) 15V 360mOhm @ 7.5A, 15V 3.5V @ 1.2mA 9.5 nC @ 15 V +18V, -8V 150 pF @ 600 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB35N60E-GE3

SIHB35N60E-GE3

MOSFET N-CH 650V 32A D2PAK

Vishay Siliconix
535 -

RFQ

SIHB35N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 94mOhm @ 17A, 10V 4V @ 250µA 132 nC @ 10 V ±30V 2760 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STFW40N60M2

STFW40N60M2

MOSFET N-CH 600V 34A ISOWATT

STMicroelectronics
114 -

RFQ

STFW40N60M2

Технические

Tube MDmesh™ II Plus Active N-Channel MOSFET (Metal Oxide) 600 V 34A (Tc) 10V 88mOhm @ 17A, 10V 4V @ 250µA 57 nC @ 10 V ±25V 2500 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA90N15

FQA90N15

MOSFET N-CH 150V 90A TO3PN

onsemi
197 -

RFQ

FQA90N15

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 90A (Tc) 10V 18mOhm @ 45A, 10V 4V @ 250µA 285 nC @ 10 V ±25V 8700 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVBLS001N06C

NVBLS001N06C

MOSFET N-CH 60V 51A/422A 8HPSOF

onsemi
8,000 -

RFQ

NVBLS001N06C

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 51A (Ta), 422A (Tc) 10V 0.9mOhm @ 80A, 10V 4V @ 562µA 143 nC @ 10 V ±20V 11575 pF @ 30 V - 4.2W (Ta), 284W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDU5N50NZTU

FDU5N50NZTU

MOSFET N-CH 500V 4A DPAK3

onsemi
4,379 -

RFQ

FDU5N50NZTU

Технические

Bulk,Tube,Tube - Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 1.5Ohm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 440 pF @ 25 V - 62W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISA66DN-T1-GE3

SISA66DN-T1-GE3

MOSFET N-CH 30V 40A PPAK1212-8

Vishay Siliconix
2,982 -

RFQ

SISA66DN-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.2V @ 1mA 66 nC @ 10 V +20V, -16V 3014 pF @ 15 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH22N60P3

IXFH22N60P3

MOSFET N-CH 600V 22A TO247AD

IXYS
174 -

RFQ

IXFH22N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIRA66DP-T1-GE3

SIRA66DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,952 -

RFQ

SIRA66DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.2V @ 1mA 66 nC @ 10 V +20V, -16V - - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIJA58ADP-T1-GE3

SIJA58ADP-T1-GE3

MOSFET N-CH 40V 32.3A/109A PPAK

Vishay Siliconix
3,815 -

RFQ

SIJA58ADP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 32.3A (Ta), 109A (Tc) 4.5V, 10V 2.65mOhm @ 15A, 10V 2.4V @ 250µA 61 nC @ 10 V +20V, -16V 3030 pF @ 20 V - 5W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH4007SK3-13

DMTH4007SK3-13

MOSFET N-CH 40V 17.6A/76A TO252

Diodes Incorporated
2,217 -

RFQ

DMTH4007SK3-13

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 40 V 17.6A (Ta), 76A (Tc) 10V 6mOhm @ 20A, 10V 4V @ 250µA 41.9 nC @ 10 V ±20V 2082 pF @ 25 V - 3.1W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DMPH4015SK3-13

DMPH4015SK3-13

MOSFET P-CHANNEL 40V 45A TO252

Diodes Incorporated
3,643 -

RFQ

DMPH4015SK3-13

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 91 nC @ 10 V ±25V 4234 pF @ 20 V - 3.3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
TPH6R30ANL,L1Q

TPH6R30ANL,L1Q

MOSFET N-CH 100V 66A/45A 8SOP

Toshiba Semiconductor and Storage
3,562 -

RFQ

TPH6R30ANL,L1Q

Технические

Tape & Reel (TR) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Ta), 45A (Tc) 4.5V, 10V 6.3mOhm @ 22.5A, 10V 2.5V @ 500µA 55 nC @ 10 V ±20V 4300 pF @ 50 V - 2.5W (Ta), 54W (Tc) 150°C Surface Mount
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