| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT60N60BCSGMOSFET N-CH 600V 60A TO247 Microchip Technology |
787 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.9V @ 3mA | 190 nC @ 10 V | ±30V | 7200 pF @ 25 V | - | 431W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUK7230-55A,118MOSFET N-CH 55V 38A DPAK Nexperia USA Inc. |
3,487 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 38A (Tc) | 10V | 30mOhm @ 25A, 10V | 4V @ 1mA | - | ±20V | 1152 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IXTT40N50L2MOSFET N-CH 500V 40A TO268 IXYS |
300 | - |
RFQ |
Технические |
Tube | Linear L2™ | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 40A (Tc) | 10V | 170mOhm @ 20A, 10V | 4.5V @ 250µA | 320 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 540W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRLIZ24GPBFMOSFET N-CHANNEL 60V 14A TO220 Vishay Siliconix |
2,576 | - |
RFQ |
Технические |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18 nC @ 5 V | ±10V | 870 pF @ 25 V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
SCT20N120AGSICFET N-CH 1200V 20A HIP247 STMicroelectronics |
551 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 239mOhm @ 10A, 20V | 3.5V @ 1mA | 45 nC @ 20 V | +25V, -10V | 650 pF @ 400 V | - | 153W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
|
RCJ050N25TLMOSFET N-CH 250V 5A LPT Rohm Semiconductor |
1,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 5A (Tc) | 10V | 1.36Ohm @ 2.5A, 10V | 5.5V @ 1mA | 8.5 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 1.56W (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount |
|
IAUZ18N10S5L420ATMA1MOSFET N-CH 100V 18A TSDSON-8-32 Infineon Technologies |
2,419 | - |
RFQ |
Технические |
Tape & Reel (TR) | OptiMOS™-5 | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | 4.5V, 10V | 42mOhm @ 9A, 10V | 2.2V @ 8µA | 8 nC @ 10 V | ±20V | 470 pF @ 50 V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
TSM70N1R4CH C5GMOSFET N-CH 700V 3.3A TO251 Taiwan Semiconductor Corporation |
2,368 | - |
RFQ |
Технические |
Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 700 V | 3.3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 370 pF @ 100 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NTMFS4C808NAT3GTRENCH 6 30V NCH onsemi |
2,583 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 52A (Tc) | 4.5V, 10V | 4.8mOhm @ 18A, 10V | 2.1V @ 250µA | 18.2 nC @ 10 V | ±20V | 1670 pF @ 15 V | - | 760mW (Ta), 25.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
TSM70N1R4CP ROGMOSFET N-CH 700V 3.3A TO252 Taiwan Semiconductor Corporation |
3,812 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 700 V | 3.3A (Tc) | 10V | 1.4Ohm @ 1.2A, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 370 pF @ 100 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRFU5505PBFMOSFET P-CH 55V 18A IPAK Infineon Technologies |
3,311 | - |
RFQ |
Технические |
Bulk,Tube | HEXFET® | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TPH2R805PL,LQPB-F POWER MOSFET TRANSISTOR SOP Toshiba Semiconductor and Storage |
3,120 | - |
RFQ |
Технические |
Tape & Reel (TR) | U-MOSIX-H | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.4V @ 500µA | 73 nC @ 10 V | ±20V | 5175 pF @ 22.5 V | - | 830mW (Ta), 116W (Tc) | 175°C | Surface Mount |
|
CSD17322Q5AMOSFET N-CH 30V 87A 8VSON Texas Instruments |
3,666 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 87A (Tc) | 4.5V, 8V | 8.8mOhm @ 14A, 8V | 2V @ 250µA | 4.3 nC @ 4.5 V | ±10V | 695 pF @ 15 V | - | 3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMT31M7LSS-13MOSFET BVDSS: 25V~30V SO-8 T&R 2 Diodes Incorporated |
2,971 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 78A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 3V @ 250µA | 84 nC @ 10 V | ±20V | 5492 pF @ 15 V | - | 1.7W (Ta), 5.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
DMT64M1LCG-7MOSFET BVDSS: 61V~100V V-DFN3333 Diodes Incorporated |
3,857 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 65 V | 16.7A (Ta), 67.8A (Tc) | 4.5V, 10V | 5.4mOhm @ 20A, 10V | 2.5V @ 250µA | 51.4 nC @ 10 V | ±20V | 2626 pF @ 30 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
IPW65R048CFDAFKSA1MOSFET N-CH 650V 63.3A TO247-3 Infineon Technologies |
221 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, CoolMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 63.3A (Tc) | 10V | 48mOhm @ 29.4A, 10V | 4.5V @ 2.9mA | 270 nC @ 10 V | ±20V | 7440 pF @ 100 V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
|
DMT64M1LCG-13MOSFET BVDSS: 61V~100V V-DFN3333 Diodes Incorporated |
2,371 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 65 V | 16.7A (Ta), 67.8A (Tc) | 4.5V, 10V | 5.4mOhm @ 20A, 10V | 2.5V @ 250µA | 51.4 nC @ 10 V | ±20V | 2626 pF @ 30 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
AOB4184MOSFET N-CH 40V 12A/50A TO263 Alpha & Omega Semiconductor Inc. |
2,286 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Ta), 50A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 3V @ 250µA | 35 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RSH090N03TB1MOSFET N-CH 30V 9A SOP8 Rohm Semiconductor |
2,403 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
DMT67M8LCGQ-13MOSFET N-CH 60V 16A/64.6A 8DFN Diodes Incorporated |
2,314 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 16A (Ta), 64.6A (Tc) | 4.5V, 10V | 5.7mOhm @ 20A, 10V | 2.5V @ 250µA | 37.5 nC @ 10 V | ±20V | 2130 pF @ 30 V | - | 900mW (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |