| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FDD6632MOSFET N-CH 30V 9A DPAK Fairchild Semiconductor |
17,099 | - |
RFQ |
Технические |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 70mOhm @ 9A, 10V | 3V @ 250µA | 4 nC @ 5 V | ±20V | 255 pF @ 15 V | - | 15W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
MMDF2P01HDR2P-CHANNEL POWER MOSFET onsemi |
17,085 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MCACD40N03-TPN-CHANNEL MOSFET, DFN5060 Micro Commercial Co |
10,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
MCG20P03-TPP-CHANNEL MOSFET, DFN3333 Micro Commercial Co |
9,860 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 28.7 nC @ 10 V | ±20V | 1750 pF @ 15 V | - | 21W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SJ576APTL-EP-CHANNEL MOSFET Renesas Electronics America Inc |
15,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
MTSF2P03HDR2P-CHANNEL POWER MOSFET onsemi |
212,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDN372SMOSFET N-CH 30V 2.6A SUPERSOT3 Fairchild Semiconductor |
111,448 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.6A (Ta) | 4.5V, 10V | 40mOhm @ 2.6A, 10V | 3V @ 1mA | 8.1 nC @ 5 V | ±16V | 630 pF @ 15 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CPH6315-TL-EP-CHANNEL POWER MOSFET onsemi |
102,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
CPH6429-TL-EMOSFET N-CH 60V 2A 6CPH onsemi |
90,074 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Ta) | - | 220mOhm @ 1A, 4V | - | 4.2 nC @ 4 V | - | 325 pF @ 20 V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | |
|
MMDF1300R2P-CHANNEL POWER MOSFET onsemi |
73,490 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BF5020WH6327N-CHANNEL POWER MOSFET Infineon Technologies |
54,916 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
MCH3427-TL-EMOSFET N-CH 20V 4A 3MCPH onsemi |
54,000 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | - | 52mOhm @ 2A, 4V | - | 6 nC @ 4 V | - | 400 pF @ 10 V | - | 1W (Ta) | 150°C (TJ) | Surface Mount |
|
CPH3331-TL-EP-CHANNEL SILICON MOSFET onsemi |
33,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
NVTFS6H854NLTAGMOSFET N-CH 80V 10A/41A 8WDFN onsemi |
2,192 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 10A (Ta), 41A (Tc) | 4.5V, 10V | 13.4mOhm @ 10A, 10V | 2V @ 45µA | 17 nC @ 10 V | ±20V | 902 pF @ 40 V | - | 3.2W (Ta), 54W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
DMP3004SSS-13MOSFET P-CH 30V 16.2A 8SO T&R 2 Diodes Incorporated |
2,063 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16.2A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.5V @ 250µA | 156 nC @ 10 V | ±20V | 7693 pF @ 15 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RSH110N03TB1MOSFET N-CH 30V 11A 8SOP Rohm Semiconductor |
3,739 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | - | 10.7mOhm @ 11A, 10V | 2.5V @ 1mA | 17 nC @ 5 V | - | 1300 pF @ 10 V | - | 2W (Ta) | - | Surface Mount |
|
TK6P53D(T6RSS-Q)MOSFET N-CH 525V 6A DPAK Toshiba Semiconductor and Storage |
2,506 | - |
RFQ |
Технические |
Tape & Reel (TR) | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 525 V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
|
TK7P50D(T6RSS-Q)MOSFET N-CH 500V 7A DPAK Toshiba Semiconductor and Storage |
3,312 | - |
RFQ |
Технические |
Tape & Reel (TR) | π-MOSVII | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 100W (Tc) | 150°C (TJ) | Surface Mount |
|
TSM60N900CH C5GMOSFET N-CH 600V 4.5A TO251 Taiwan Semiconductor Corporation |
3,044 | - |
RFQ |
Технические |
Tube | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7 nC @ 10 V | ±30V | 480 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
TSM60N900CP ROGMOSFET N-CH 600V 4.5A TO252 Taiwan Semiconductor Corporation |
3,284 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7 nC @ 10 V | ±30V | 480 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |