| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AOT4S60LMOSFET N-CH 600V 4A TO220 Alpha & Omega Semiconductor Inc. |
3,767 | - |
RFQ |
Технические |
Tube | aMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | ±30V | 263 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
AOTF4S60MOSFET N-CH 600V 4A TO220-3F Alpha & Omega Semiconductor Inc. |
2,045 | - |
RFQ |
Технические |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | ±30V | 263 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRFR214TRPBF-BE3N-CHANNEL 250V Vishay Siliconix |
2,922 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RDD020N60TLMOSFET N-CH 600V 2A CPT3 Rohm Semiconductor |
2,476 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Ta) | 10V | - | - | - | ±30V | - | - | 20W (Tc) | 150°C (TJ) | Surface Mount |
|
BB504CDS-TL-ERF N-CHANNEL MOSFET Renesas Electronics America Inc |
963,000 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
ON5258215NOW NEXPERIA ON5258 - RF MOSFET NXP USA Inc. |
696,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
UPA502T(0)-T2-ASMALL SIGNAL N-CHANNEL MOSFET Renesas Electronics America Inc |
221,382 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSP126/S911115N-CHANNEL POWER MOSFET NXP USA Inc. |
204,767 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
ISL9N322AP3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
157,453 | - |
RFQ |
Технические |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 22mOhm @ 35A, 10V | 3V @ 250µA | 27 nC @ 10 V | ±20V | 970 pF @ 15 V | - | 50W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
|
BB504CDS-TL-HRF N-CHANNEL MOSFET Renesas Electronics America Inc |
57,000 | - |
RFQ |
Технические |
Bulk | * | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STD5P06VT4PFET DPAK SPCL 60V TR onsemi |
52,500 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
FDME430NTMOSFET N-CH 30V 6A MICROFET Fairchild Semiconductor |
34,301 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Ta) | - | 40mOhm @ 6A, 4.5V | 1.5V @ 250µA | 9 nC @ 4.5 V | ±12V | 760 pF @ 15 V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PN3685MOSFET N-CH TO-92 Fairchild Semiconductor |
23,600 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | - | - | - | - | - | - | - | - | - | - | - | Through Hole |
|
SI4431DYP-CHANNEL MOSFET Fairchild Semiconductor |
22,104 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 6.3A (Ta) | 4.5V, 10V | 32mOhm @ 7A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±20V | 930 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SK1337TZ-ESMALL SIGNAL N-CHANNEL MOSFET Renesas Electronics America Inc |
20,403 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFR210BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |
17,300 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.7A (Tc) | 10V | 1.5Ohm @ 1.35A, 10V | 4V @ 250µA | 9.3 nC @ 10 V | ±30V | 225 pF @ 25 V | - | 2.5W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
STD1059-001NFET DPAK SPECIAL onsemi |
15,225 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
BUK9245-55A/C1118N-CHANNEL POWER MOSFET NXP USA Inc. |
15,000 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK4180-T1-AN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
12,000 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
BUK6228-55C,118PFET, 31A I(D), 55V, 0.044OHM, 1 NXP USA Inc. |
2,867 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 29mOhm @ 10A, 10V | 2.8V @ 1mA | 20.2 nC @ 10 V | ±16V | 1340 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |