| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ISL9N315AD3N-CHANNEL POWER MOSFET Fairchild Semiconductor |
16,032 | - |
RFQ |
Технические |
Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 15mOhm @ 30A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 900 pF @ 15 V | - | 55W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
|
BSC883N03LSGN-CHANNEL POWER MOSFET Infineon Technologies |
14,999 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPP096N03LGHKSA1N-CHANNEL POWER MOSFET Infineon Technologies |
13,100 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFH7921TRPBF-IRIRFH7921 - HEXFET POWER MOSFET International Rectifier |
11,183 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
AOWF4S60MOSFET N-CH 600V 4A TO262F Alpha & Omega Semiconductor Inc. |
2,390 | - |
RFQ |
Технические |
Tube | aMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 600 V | 4A (Tc) | 10V | 900mOhm @ 2A, 10V | 4.1V @ 250µA | 6 nC @ 10 V | ±30V | 263 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BUK7575-100A,127MOSFET N-CH 100V 23A TO220AB NXP USA Inc. |
10,760 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Ta) | - | 75mOhm @ 13A, 10V | 4V @ 1mA | - | ±20V | 1210 pF @ 25 V | - | 99W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
|
PJQ5442-AU_R2_000A140V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 14A (Ta), 90A (Tc) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 4.5 V | ±20V | 1258 pF @ 25 V | - | 2.4W (Ta), 99.3W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
AOB2910LMOSFET N CH 100V 6A TO263 Alpha & Omega Semiconductor Inc. |
2,221 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Ta), 30A (Tc) | 4.5V, 10V | 23.5mOhm @ 20A, 10V | 2.7V @ 250µA | 25 nC @ 10 V | ±20V | 1190 pF @ 50 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFU91103.1A 100V 1.200 OHM P-CHANNEL Harris Corporation |
2,564 | - |
RFQ |
Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
NTTFS8D1N08HTAGMOSFET N-CH 80V 14A/61A 8WDFN onsemi |
3,935 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 14A (Ta), 61A (Tc) | 6V, 10V | 8.3mOhm @ 16A, 10V | 4V @ 80µA | 23 nC @ 10 V | ±20V | 1450 pF @ 20 V | - | 3.2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
DMT10H009LPS-13MOSFET N-CH 100V PWRDI5060 Diodes Incorporated |
2,160 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 90A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 40.2 nC @ 10 V | ±20V | 2309 pF @ 50 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CSD17305Q5AMOSFET N-CH 30V 29A/100A 8VSON Texas Instruments |
2,500 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 29A (Ta), 100A (Tc) | 3V, 8V | 3.4mOhm @ 30A, 8V | 1.6V @ 250µA | 18.3 nC @ 4.5 V | +10V, -8V | 2600 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF520MOSFET N-CH 100V 9.2A TO220AB Harris Corporation |
1,331 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | - | 270mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
BUK9245-55A,118TRANSISTOR >30MHZ NXP USA Inc. |
1,063 | - |
RFQ |
Технические |
Bulk | Automotive, AEC-Q101, TrenchMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 28A (Tc) | 4.5V, 10V | 40mOhm @ 5A, 10V | 2V @ 1mA | 14 nC @ 5 V | ±15V | 1006 pF @ 25 V | - | 70W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDG330PMOSFET P-CH 12V 2A SC88 Fairchild Semiconductor |
219,501 | - |
RFQ |
Технические |
Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 2A (Ta) | - | 110mOhm @ 2A, 4.5V | 1.5V @ 250µA | 7 nC @ 4.5 V | ±8V | 477 pF @ 6 V | - | 480mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
ATP201-V-TL-HN-CHANNEL MOSFET Sanyo |
114,000 | - |
RFQ |
Bulk | - | Active | - | - | - | 35A (Tj) | - | - | - | - | - | - | - | - | 150°C (TJ) | Surface Mount | |
|
MTD3302T4SMALL SIGNAL N-CHANNEL MOSFET onsemi |
92,500 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
STU6N60DM2MOSFET N-CH 600V 5A IPAK STMicroelectronics |
3,013 | - |
RFQ |
Технические |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 5A (Tc) | 10V | 1.1Ohm @ 2.5A, 10V | 4.75V @ 250µA | 6.2 nC @ 10 V | ±25V | 274 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPD40N03S4L08ATMA1MOSFET N-CH 30V 40A TO252-31 Infineon Technologies |
17,972 | - |
RFQ |
Технические |
Tape & Reel (TR),Bulk | Automotive, AEC-Q101, OptiMOS™ | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 8.3mOhm @ 40A, 10V | 2.2V @ 13µA | 20 nC @ 10 V | ±16V | 1520 pF @ 15 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFR120TRRPBFMOSFET N-CH 100V 7.7A DPAK Vishay Siliconix |
3,258 | - |
RFQ |
Технические |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.7A (Tc) | 10V | 270mOhm @ 4.6A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |