Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVTYS003N03CLTWG

NVTYS003N03CLTWG

T6 30V N-CH LL IN LFPAK33

onsemi
2,270 -

RFQ

NVTYS003N03CLTWG

Технические

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 98A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.2V @ 250µA 26 nC @ 10 V ±20V 1870 pF @ 15 V - 3W (Ta), 59W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMT61M5SPSW-13

DMT61M5SPSW-13

MOSFET BVDSS: 41V~60V POWERDI506

Diodes Incorporated
3,973 -

RFQ

DMT61M5SPSW-13

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 215A (Tc) 10V 1.5mOhm @ 30A, 10V 4V @ 250µA 130.6 nC @ 10 V ±20V 8306 pF @ 30 V - 2.7W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOWF380A60C

AOWF380A60C

MOSFET N-CH 600V 11A TO262F

Alpha & Omega Semiconductor Inc.
3,052 -

RFQ

AOWF380A60C

Технические

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tj) 10V 380mOhm @ 5.5A, 10V 3.8V @ 250µA 20 nC @ 10 V ±20V 955 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STL3N80K5

STL3N80K5

MOSFET N-CH 800V 2.5A POWERFLAT

STMicroelectronics
3,342 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
FQPF3N50C

FQPF3N50C

MOSFET N-CH 500V 3A TO220F

Fairchild Semiconductor
20,381 -

RFQ

FQPF3N50C

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 250µA 13 nC @ 10 V ±30V 365 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF540

IRF540

MOSFET N-CH 100V 28A TO220AB

onsemi
4,849 -

RFQ

IRF540

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1700 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQD10N30-330H_4GE3

SQD10N30-330H_4GE3

N-CHANNEL 300-V (D-S) 175C MOSFE

Vishay Siliconix
4,678 -

RFQ

SQD10N30-330H_4GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 300 V 10A (Tc) 10V 330mOhm @ 14A, 10V 4.4V @ 250µA 47 nC @ 10 V ±30V 2190 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4463DY

SI4463DY

P-CHANNEL MOSFET

Fairchild Semiconductor
192,279 -

RFQ

SI4463DY

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 11.5A (Ta) 2.5V, 4.5V 12mOhm @ 11.5A, 4.5V 1.5V @ 250µA 60 nC @ 4.5 V ±12V 4481 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPW50R280CE

IPW50R280CE

N-CHANNEL POWER MOSFET

Infineon Technologies
114,925 -

RFQ

IPW50R280CE

Технические

Bulk * Active - - - - - - - - - - - - - -
HUFA75321S3ST

HUFA75321S3ST

MOSFET N-CH 55V 35A D2PAK

Fairchild Semiconductor
16,000 -

RFQ

HUFA75321S3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF9Z34N

AUIRF9Z34N

AUTOMOTIVE HEXFET P CHANNEL

International Rectifier
11,686 -

RFQ

AUIRF9Z34N

Технические

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75337S3ST

HUFA75337S3ST

MOSFET N-CH 55V 75A D2PAK

Fairchild Semiconductor
10,860 -

RFQ

HUFA75337S3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 109 nC @ 20 V ±20V 1775 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK03M3DPA-00#J5A

RJK03M3DPA-00#J5A

MOSFET N-CH 30V 40A 8WPAK

Renesas Electronics America Inc
3,000 -

RFQ

RJK03M3DPA-00#J5A

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 4.5V, 10V 3.9mOhm @ 20A, 10V - 15.7 nC @ 4.5 V ±20V 3010 pF @ 10 V - 35W (Tc) 150°C (TJ) Surface Mount
FDC633N

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

Fairchild Semiconductor
1,220,870 -

RFQ

FDC633N

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.2A (Ta) 2.5V, 4.5V 42mOhm @ 5.2A, 4.5V 1V @ 250µA 16 nC @ 4.5 V ±8V 538 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR320TRRPBF

IRFR320TRRPBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,556 -

RFQ

IRFR320TRRPBF

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320PBF-BE3

IRFR320PBF-BE3

N-CHANNEL 400V

Vishay Siliconix
3,753 -

RFQ

IRFR320PBF-BE3

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320TRPBF-BE3

IRFR320TRPBF-BE3

N-CHANNEL 400V

Vishay Siliconix
2,096 -

RFQ

IRFR320TRPBF-BE3

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TK5A45DA(STA4,Q,M)

TK5A45DA(STA4,Q,M)

MOSFET N-CH 450V 4.5A TO220SIS

Toshiba Semiconductor and Storage
3,224 -

RFQ

TK5A45DA(STA4,Q,M)

Технические

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A (Ta) 10V 1.75Ohm @ 2.3A, 10V 4.4V @ 1mA 9 nC @ 10 V ±30V 380 pF @ 25 V - 30W (Tc) 150°C (TJ) Through Hole
TP0606N3-G-P002

TP0606N3-G-P002

MOSFET P-CH 60V 320MA TO92-3

Microchip Technology
3,829 -

RFQ

TP0606N3-G-P002

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 320mA (Tj) 5V, 10V 3.5Ohm @ 750mA, 10V 2.4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
TP0606N3-G-P003

TP0606N3-G-P003

MOSFET P-CH 60V 320MA TO92-3

Microchip Technology
3,474 -

RFQ

TP0606N3-G-P003

Технические

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 320mA (Tj) 5V, 10V 3.5Ohm @ 750mA, 10V 2.4V @ 1mA - ±20V 150 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь