Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2719GR-E1-A

UPA2719GR-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
21,376 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2719GR-E1-AT

UPA2719GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
15,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSP135L6906

BSP135L6906

N-CHANNEL POWER MOSFET

Infineon Technologies
12,702 -

RFQ

BSP135L6906

Технические

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF3504

AUIRF3504

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
12,211 -

RFQ

AUIRF3504

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 87A (Tc) 10V 9.2mOhm @ 52A, 10V 4V @ 100µA 54 nC @ 10 V ±20V 2150 pF @ 25 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75631SK8

HUF75631SK8

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,828 -

RFQ

HUF75631SK8

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJP18N20_T0_00001

PJP18N20_T0_00001

TO-220AB, MOSFET

Panjit International Inc.
1,875 -

RFQ

PJP18N20_T0_00001

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 160mOhm @ 9A, 10V 3V @ 250µA 24 nC @ 10 V ±20V 1017 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFZ44N

AUIRFZ44N

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
1,120 -

RFQ

AUIRFZ44N

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS6680

FDS6680

MOSFET N-CH 30V 11.5A 8SOIC

Fairchild Semiconductor
58,328 -

RFQ

FDS6680

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2070 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6670S

FDS6670S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
28,785 -

RFQ

FDS6670S

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V 3V @ 1mA 34 nC @ 5 V ±20V 2674 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF9N50YDTU

FQPF9N50YDTU

MOSFET N-CH 500V 5.3A TO220F-3

Fairchild Semiconductor
24,800 -

RFQ

FQPF9N50YDTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S530SM9A

RF1S530SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
11,640 -

RFQ

RF1S530SM9A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.3A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF9N50T

FQPF9N50T

MOSFET N-CH 500V 5.3A TO220F

Fairchild Semiconductor
11,000 -

RFQ

FQPF9N50T

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
H7N1004FN-E

H7N1004FN-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
44,013 -

RFQ

H7N1004FN-E

Технические

Bulk * Active - - - - - - - - - - - - - -
RJK6026DPP-90#T2F

RJK6026DPP-90#T2F

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
38,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDS6614A

FDS6614A

MOSFET N-CH 30V 9.3A 8SOIC

Fairchild Semiconductor
25,863 -

RFQ

FDS6614A

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.3A (Ta) 4.5V, 10V 18mOhm @ 9.3A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RJK6026DPP-00#T2

RJK6026DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
25,529 -

RFQ

RJK6026DPP-00#T2

Технические

Bulk * Active - - - - - - - - - - - - - -
AUIRFZ46NL

AUIRFZ46NL

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
9,803 -

RFQ

AUIRFZ46NL

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 39A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFZ44V

AUIRFZ44V

MOSFET N-CH 60V 55A TO220AB

International Rectifier
10,850 -

RFQ

AUIRFZ44V

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) - 16.5mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V - 1812 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R310CFD

IPI65R310CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
10,696 -

RFQ

IPI65R310CFD

Технические

Bulk * Active - - - - - - - - - - - - - -
RJK03P3DPA-00#J5A

RJK03P3DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
816,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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