Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMJ70H600SH3

DMJ70H600SH3

MOSFET N-CH 700V 11A TO251

Diodes Incorporated
2,535 -

RFQ

DMJ70H600SH3

Технические

Tube Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 700 V 11A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 18.2 nC @ 10 V ±30V 643 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3007STRLPBF

IRF3007STRLPBF

MOSFET N CH 75V 62A D2PAK

Infineon Technologies
3,060 -

RFQ

IRF3007STRLPBF

Технические

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 62A (Tc) 10V 12.6mOhm @ 48A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3270 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AOTF66613L

AOTF66613L

MOSFET N-CH 60V 44.5A/90A TO220F

Alpha & Omega Semiconductor Inc.
3,694 -

RFQ

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 44.5A (Ta), 90A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 8.3W (Ta), 34.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
AOT66613L

AOT66613L

MOSFET N-CH 60V 44.5A/120A TO220

Alpha & Omega Semiconductor Inc.
3,288 -

RFQ

Tube AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 44.5A (Ta), 120A (Tc) 8V, 10V 2.5mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 8.3W (Ta), 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R380E6XKSA1

IPP60R380E6XKSA1

MOSFET N-CH 600V 10.6A TO220-3

Infineon Technologies
500 -

RFQ

IPP60R380E6XKSA1

Технические

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 3.5V @ 320µA 32 nC @ 10 V ±20V 700 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP093N06N3GXKSA1

IPP093N06N3GXKSA1

MOSFET N-CH 60V 50A TO220-3

Infineon Technologies
2,546 -

RFQ

IPP093N06N3GXKSA1

Технические

Tube OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 9.3mOhm @ 50A, 10V 4V @ 34µA 36 nC @ 10 V ±20V 2900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
STU7NF25

STU7NF25

MOSFET N-CH 250V 8A IPAK

STMicroelectronics
3,361 -

RFQ

STU7NF25

Технические

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 420mOhm @ 4A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 500 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
FKV550N

FKV550N

MOSFET N-CH 50V 50A TO220F

Sanken
2,941 -

RFQ

FKV550N

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Ta) 10V 15mOhm @ 25A, 10V 4.2V @ 250µA - ±20V 2000 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
TSM7NC65CF C0G

TSM7NC65CF C0G

MOSFET N-CH 650V 7A ITO220S

Taiwan Semiconductor Corporation
2,623 -

RFQ

TSM7NC65CF C0G

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.35Ohm @ 2A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 1169 pF @ 50 V - 44.6W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK10A50D(STA4,Q,M)

TK10A50D(STA4,Q,M)

MOSFET N-CH 500V 10A TO220SIS

Toshiba Semiconductor and Storage
2,291 -

RFQ

TK10A50D(STA4,Q,M)

Технические

Tube π-MOSVII Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Ta) 10V 720mOhm @ 5A, 10V 4V @ 1mA 20 nC @ 10 V ±30V 1050 pF @ 25 V - 45W (Tc) 150°C (TJ) Through Hole
AOT190A60L

AOT190A60L

MOSFET N-CH 600V TO220-3

Alpha & Omega Semiconductor Inc.
3,585 -

RFQ

AOT190A60L

Технические

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 170mOhm @ 7.6A, 10V 4.6V @ 250µA 34 nC @ 10 V ±20V 1935 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMFSC2D9N08H

NTMFSC2D9N08H

T8 80V DFN8 5X6 DUAL COOL

onsemi
3,051 -

RFQ

NTMFSC2D9N08H

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 80 V 23A (Ta), 154A (Tc) 6V, 10V 2.9mOhm @ 50A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 4380 pF @ 40 V - 3.8W (Ta), 166W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA4N80P-TRL

IXTA4N80P-TRL

MOSFET N-CH 800V 3.6A TO263

IXYS
2,499 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3.4Ohm @ 1.8A, 10V 5.5V @ 100µA 14.2 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1N100P-TRL

IXTA1N100P-TRL

MOSFET N-CH 1000V 1A TO263

IXYS
3,344 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMNH45M7SCT

DMNH45M7SCT

MOSFET N-CH 40V 220A TO220AB

Diodes Incorporated
3,224 -

RFQ

DMNH45M7SCT

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 6mOhm @ 20A, 10V 3V @ 250µA 64.7 nC @ 10 V ±20V 4043 pF @ 20 V - 240W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTMFS5C430NLT3G

NTMFS5C430NLT3G

MOSFET N-CH 40V 200A 5DFN

onsemi
2,088 -

RFQ

NTMFS5C430NLT3G

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 1.5mOhm @ 50A, 10V 2V @ 250µA 70 nC @ 10 V ±20V 4300 pF @ 20 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB90N06S404ATMA2

IPB90N06S404ATMA2

MOSFET N-CH 60V 90A D2PAK

Infineon Technologies
2,766 -

RFQ

IPB90N06S404ATMA2

Технические

Tape & Reel (TR),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 10V 4mOhm @ 90A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM40012EL-GE3

SUM40012EL-GE3

MOSFET N-CH 40V 150A TO263

Vishay Siliconix
2,133 -

RFQ

SUM40012EL-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 4.5V, 10V 1.67mOhm @ 30A, 10V 2.5V @ 250µA 195 nC @ 10 V ±20V 10930 pF @ 20 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA029N06NM5SXKSA1

IPA029N06NM5SXKSA1

MOSFET N-CH 60V 87A TO220

Infineon Technologies
950 -

RFQ

IPA029N06NM5SXKSA1

Технические

Bulk,Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 87A (Tc) 6V, 10V 2.9mOhm @ 87A, 10V 3.3V @ 36µA 74 nC @ 10 V ±20V 5300 pF @ 30 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
AOWF160A60

AOWF160A60

MOSFET N-CH 600V 24A TO262F

Alpha & Omega Semiconductor Inc.
3,565 -

RFQ

AOWF160A60

Технические

Tube aMOS5™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 160mOhm @ 12A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 2340 pF @ 100 V - 27.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
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