Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UMW 40N06

UMW 40N06

TO-252 MOSFETS ROHS

UTD Semiconductor
2,405 -

RFQ

UMW 40N06

Технические

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2928 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK969R3-100E,118

BUK969R3-100E,118

MOSFET N-CH 100V 100A D2PAK

NXP USA Inc.
2,962 -

RFQ

BUK969R3-100E,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 5V, 10V 8.9mOhm @ 25A, 10V 2.1V @ 1mA 94.3 nC @ 5 V ±10V 11650 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
G45P40T

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor
3,595 -

RFQ

Tube * Active - - - - - - - - - - - - - -
G300P06T

G300P06T

MOSFET, P-CH, 60V,40A,TO-220

Goford Semiconductor
3,088 -

RFQ

Tube * Active - - - - - - - - - - - - - -
UMW 50N06

UMW 50N06

TO-252 MOSFETS ROHS

UTD Semiconductor
2,655 -

RFQ

UMW 50N06

Технические

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 17mOhm @ 30A, 10V 2.5V @ 250µA 50 nC @ 10 V ±20V 2928 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
UMW 15N10

UMW 15N10

100V 15A 50W 80MR@10V,10A 2.5V@2

UTD Semiconductor
2,011 -

RFQ

UMW 15N10

Технические

Tape & Reel (TR) UMW Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4.5V, 10V 110mOhm @ 10A, 10V 3V @ 250µA 19.2 nC @ 10 V ±20V 632 pF @ 50 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7207Q

AUIRF7207Q

MOSFET P-CH 20V 5.4A 8SO

International Rectifier
2,091 -

RFQ

AUIRF7207Q

Технические

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 1.6V @ 250µA 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR3806

AUIRFR3806

MOSFET N-CH 60V 43A DPAK

International Rectifier
2,421 -

RFQ

AUIRFR3806

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 43A (Tc) 10V 15.8mOhm @ 25A, 10V 4V @ 50µA 30 nC @ 10 V ±20V 1150 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS8409TRL

AUIRFS8409TRL

MOSFET N-CH 40V 195A D2PAK

International Rectifier
3,832 -

RFQ

AUIRFS8409TRL

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH150N65F-F155

FCH150N65F-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,899 -

RFQ

FCH150N65F-F155

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFR024NTRL

AUIRFR024NTRL

MOSFET N-CH 55V 17A TO252AA

International Rectifier
3,998 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) - 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V - 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCPF380N60E

FCPF380N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,293 -

RFQ

FCPF380N60E

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF650N80Z

FCPF650N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,472 -

RFQ

FCPF650N80Z

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 4A, 10V 4.5V @ 800µA 35 nC @ 10 V ±20V 1565 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC016N03MSG

BSC016N03MSG

BSC016N03 - 12V-300V N-CHANNEL P

Infineon Technologies
2,479 -

RFQ

BSC016N03MSG

Технические

Bulk * Active - - - - - - - - - - - - - -
BSZ12DN20NS3G

BSZ12DN20NS3G

BSZ12DN20 - 12V-300V N-CHANNEL P

Infineon Technologies
3,981 -

RFQ

BSZ12DN20NS3G

Технические

Bulk * Active - - - - - - - - - - - - - -
FDN357N

FDN357N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,465 -

RFQ

FDN357N

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 60mOhm @ 2.2A, 10V 2V @ 250µA 5.9 nC @ 5 V ±20V 235 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000

2N7000

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,384 -

RFQ

2N7000

Технические

Bulk STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 250µA 2 nC @ 5 V ±18V 43 pF @ 25 V - 350mW (Ta) 150°C (TJ) Through Hole
2N7002PS115

2N7002PS115

NOW NEXPERIA 2N7002PS - SMALL SI

Nexperia USA Inc.
2,525 -

RFQ

2N7002PS115

Технические

Bulk * Active - - - - - - - - - - - - - -
IPD50N06S2-14

IPD50N06S2-14

IPD50N06 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,473 -

RFQ

IPD50N06S2-14

Технические

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 50A (Tc) 10V 14.4mOhm @ 32A, 10V 4V @ 80µA 52 nC @ 10 V ±20V 1485 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y9R9-80EX

BUK7Y9R9-80EX

TRANSISTOR >30MHZ

NXP USA Inc.
3,789 -

RFQ

BUK7Y9R9-80EX

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 89A (Tc) 10V 98mOhm @ 5A, 10V 4V @ 1mA 51.6 nC @ 10 V ±20V 498 pF @ 25 V - 195W (Tc) -55°C ~ 175°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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