Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3103LPBF

IRL3103LPBF

MOSFET N-CH 30V 64A TO262

Infineon Technologies
3,619 -

RFQ

IRL3103LPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004LPBF

IRL1004LPBF

MOSFET N-CH 40V 130A TO262

Infineon Technologies
2,136 -

RFQ

IRL1004LPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010NLPBF

IRF1010NLPBF

MOSFET N-CH 55V 85A TO262

Infineon Technologies
3,824 -

RFQ

IRF1010NLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103D2PBF

IRL3103D2PBF

MOSFET N-CH 30V 54A TO220AB

Infineon Technologies
2,711 -

RFQ

IRL3103D2PBF

Технические

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 54A (Tc) 4.5V, 10V 14mOhm @ 32A, 10V 1V @ 250µA 44 nC @ 4.5 V ±16V 2300 pF @ 25 V - 2W (Ta), 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48NLPBF

IRFZ48NLPBF

MOSFET N-CH 55V 64A TO262

Infineon Technologies
2,081 -

RFQ

IRFZ48NLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NLPBF

IRL2203NLPBF

MOSFET N-CH 30V 116A TO262

Infineon Technologies
2,274 -

RFQ

IRL2203NLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705NLPBF

IRL3705NLPBF

MOSFET N-CH 55V 89A TO262

Infineon Technologies
3,129 -

RFQ

IRL3705NLPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB42N20DPBF

IRFB42N20DPBF

MOSFET N-CH 200V 44A TO220AB

Infineon Technologies
2,820 -

RFQ

IRFB42N20DPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 44A (Tc) 10V 55mOhm @ 26A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3430 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQJA84EP-T1_GE3

SQJA84EP-T1_GE3

MOSFET N-CH 80V 46A PPAK SO-8

Vishay Siliconix
3,457 -

RFQ

SQJA84EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2100 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8820

FDMS8820

MOSFET N-CH 30V 28A/116A 8PQFN

onsemi
2,109 -

RFQ

FDMS8820

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 116A (Tc) 4.5V, 10V 2mOhm @ 28A, 10V 2.5V @ 250µA 88 nC @ 10 V ±20V 5315 pF @ 15 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZXMP4A16KTC

ZXMP4A16KTC

MOSFET P-CH 40V 6.6A TO252-3

Diodes Incorporated
2,171 -

RFQ

ZXMP4A16KTC

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 6.6A (Ta) 4.5V, 10V 60mOhm @ 3.8A, 10V 1V @ 250µA 29.6 nC @ 10 V ±20V 965 pF @ 20 V - 2.15W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AON7254

AON7254

MOSFET N-CH 150V 5.5A/17A 8DFN

Alpha & Omega Semiconductor Inc.
2,529 -

RFQ

AON7254

Технические

Tape & Reel (TR),Cut Tape (CT) AlphaMOS Active N-Channel MOSFET (Metal Oxide) 150 V 5.5A (Ta), 17A (Tc) 4.5V, 10V 54mOhm @ 5A, 10V 2.7V @ 250µA 20 nC @ 10 V ±20V 675 pF @ 75 V - 4.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM260P02CX6 RFG

TSM260P02CX6 RFG

MOSFET P-CHANNEL 20V 6.5A SOT26

Taiwan Semiconductor Corporation
2,134 -

RFQ

TSM260P02CX6 RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 6.5A (Tc) 1.8V, 4.5V 26mOhm @ 5A, 4.5V 1V @ 250µA 19.5 nC @ 4.5 V ±10V 1670 pF @ 15 V - 1.56W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

MOSFET N-CH 30V 16A PPAK1212-8

Vishay Siliconix
3,082 -

RFQ

SI7716ADN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 13.5mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 846 pF @ 15 V - 3.5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ479EP-T1_GE3

SQJ479EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

Vishay Siliconix
3,007 -

RFQ

SQJ479EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 32A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
DMTH6009LK3Q-13

DMTH6009LK3Q-13

MOSFET N-CH 60V 14.2A/59A TO252

Diodes Incorporated
3,791 -

RFQ

DMTH6009LK3Q-13

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14.2A (Ta), 59A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 2V @ 250µA 33.5 nC @ 10 V ±20V 1925 pF @ 30 V - 3.2W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN020-100YS,115

PSMN020-100YS,115

MOSFET N-CH 100V 43A LFPAK56

Nexperia USA Inc.
3,931 -

RFQ

PSMN020-100YS,115

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 20.5mOhm @ 15A, 10V 4V @ 1mA 41 nC @ 10 V ±20V 2210 pF @ 50 V - 106W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ZXMN10A25GTA

ZXMN10A25GTA

MOSFET N-CH 100V 2.9A SOT223

Diodes Incorporated
2,283 -

RFQ

ZXMN10A25GTA

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 2.9A (Ta) 10V 125mOhm @ 2.9A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 859 pF @ 50 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2003UPS-13

DMP2003UPS-13

MOSFET P-CH 20V 150A PWRDI5060-8

Diodes Incorporated
3,622 -

RFQ

DMP2003UPS-13

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 150A (Tc) 2.5V, 10V 2.2mOhm @ 25A, 10V 1.4V @ 250µA 177 nC @ 10 V ±12V 8352 pF @ 10 V - 1.4W -55°C ~ 150°C (TJ) Surface Mount
SISS05DN-T1-GE3

SISS05DN-T1-GE3

MOSFET P-CH 30V 29.4A/108A PPAK

Vishay Siliconix
3,261 -

RFQ

SISS05DN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 29.4A (Ta), 108A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.2V @ 250µA 115 nC @ 10 V +16V, -20V 4930 pF @ 15 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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