Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ZVN4206GVTC

ZVN4206GVTC

MOSFET N-CH 60V 1A SOT223

Diodes Incorporated
2,569 -

RFQ

ZVN4206GVTC

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1A (Ta) 5V, 10V 1Ohm @ 1.5A, 10V 3V @ 1mA - ±20V 100 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4210ASTOB

ZVN4210ASTOB

MOSFET N-CH 100V 450MA E-LINE

Diodes Incorporated
2,159 -

RFQ

ZVN4210ASTOB

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 450mA (Ta) 5V, 10V 1.5Ohm @ 1.5A, 10V 2.4V @ 1mA - ±20V 100 pF @ 25 V - 700mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4210GTC

ZVN4210GTC

MOSFET N-CH 100V 800MA SOT223

Diodes Incorporated
3,087 -

RFQ

ZVN4210GTC

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 800mA (Ta) 5V, 10V 1.5Ohm @ 1.5A, 10V 2.4V @ 1mA - ±20V 100 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4306ASTOA

ZVN4306ASTOA

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
2,961 -

RFQ

ZVN4306ASTOA

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306ASTOB

ZVN4306ASTOB

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
3,541 -

RFQ

ZVN4306ASTOB

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306ASTZ

ZVN4306ASTZ

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
2,825 -

RFQ

ZVN4306ASTZ

Технические

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306AVSTOA

ZVN4306AVSTOA

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
3,500 -

RFQ

ZVN4306AVSTOA

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306AVSTOB

ZVN4306AVSTOB

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
3,023 -

RFQ

ZVN4306AVSTOB

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306AVSTZ

ZVN4306AVSTZ

MOSFET N-CH 60V 1.1A E-LINE

Diodes Incorporated
2,618 -

RFQ

ZVN4306AVSTZ

Технические

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4306GTC

ZVN4306GTC

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated
2,021 -

RFQ

ZVN4306GTC

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4306GVTC

ZVN4306GVTC

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated
2,249 -

RFQ

ZVN4306GVTC

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4310ASTOB

ZVN4310ASTOB

MOSFET N-CH 100V 900MA E-LINE

Diodes Incorporated
3,182 -

RFQ

ZVN4310ASTOB

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 900mA (Ta) 5V, 10V 500mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IXTA06N120P

IXTA06N120P

MOSFET N-CH 1200V 600MA TO263

IXYS
606 -

RFQ

IXTA06N120P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) 10V 32Ohm @ 300mA, 10V 4.5V @ 50µA 13.3 nC @ 10 V ±20V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R045CFD7XTMA1

IPT60R045CFD7XTMA1

MOSFET N-CH 600V 52A 8HSOF

Infineon Technologies
2,191 -

RFQ

IPT60R045CFD7XTMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 52A (Tc) 10V 45mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 270W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP600N25N3GXKSA1

IPP600N25N3GXKSA1

MOSFET N-CH 250V 25A TO220-3

Infineon Technologies
2,042 -

RFQ

IPP600N25N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 25A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 90µA 29 nC @ 10 V ±20V 2350 pF @ 100 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP4768PBF

IRFP4768PBF

MOSFET N-CH 250V 93A TO247AC

Infineon Technologies
3,635 -

RFQ

IRFP4768PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 93A (Tc) 10V 17.5mOhm @ 56A, 10V 5V @ 250µA 270 nC @ 10 V ±20V 10880 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFA4N100Q

IXFA4N100Q

MOSFET N-CH 1000V 4A TO263

IXYS
2,051 -

RFQ

IXFA4N100Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 4.5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ZVN4310ASTZ

ZVN4310ASTZ

MOSFET N-CH 100V 900MA E-LINE

Diodes Incorporated
3,163 -

RFQ

ZVN4310ASTZ

Технические

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 900mA (Ta) 5V, 10V 500mOhm @ 3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 850mW (Ta) -55°C ~ 150°C (TJ) Through Hole
ZVN4310GTC

ZVN4310GTC

MOSFET N-CH 100V 1.67A SOT223

Diodes Incorporated
2,270 -

RFQ

ZVN4310GTC

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.67A (Ta) 5V, 10V 540mOhm @ 3.3A, 10V 3V @ 1mA - ±20V 350 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVN4424ASTOA

ZVN4424ASTOA

MOSFET N-CH 240V 260MA E-LINE

Diodes Incorporated
3,861 -

RFQ

ZVN4424ASTOA

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 240 V 260mA (Ta) 2.5V, 10V 5.5Ohm @ 500mA, 10V 1.8V @ 1mA - ±40V 200 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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