Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB60R600CP

IPB60R600CP

N-CHANNEL POWER MOSFET

Infineon Technologies
6,970 -

RFQ

IPB60R600CP

Технические

Bulk * Active - - - - - - - - - - - - - -
FQU8N25TU

FQU8N25TU

MOSFET N-CH 250V 6.2A IPAK

Fairchild Semiconductor
5,629 -

RFQ

FQU8N25TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 530 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6811STRPBF-INF

IRF6811STRPBF-INF

DIRECTFET PLUS POWER MOSFET

Infineon Technologies
5,534 -

RFQ

IRF6811STRPBF-INF

Технические

Bulk DirectFET® Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) - 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQPF4N60

FQPF4N60

MOSFET N-CH 600V 2.6A TO220F

Fairchild Semiconductor
4,775 -

RFQ

FQPF4N60

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.6A (Tc) 10V 2.2Ohm @ 1.3A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 670 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N50CFTU

FQPF5N50CFTU

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor
3,499 -

RFQ

FQPF5N50CFTU

Технические

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL540A

IRL540A

MOSFET N-CH 100V 28A TO220-3

Fairchild Semiconductor
3,083 -

RFQ

IRL540A

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 5V 58mOhm @ 14A, 5V 2V @ 250µA 54 nC @ 5 V ±20V 1580 pF @ 25 V - 121W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP45N06LE

RFP45N06LE

N-CHANNEL POWER MOSFET

Harris Corporation
1,569 -

RFQ

RFP45N06LE

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD16N05_NL

RFD16N05_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,435 -

RFQ

RFD16N05_NL

Технические

Bulk PSPICE® Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76121S3S

HUF76121S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,200 -

RFQ

HUF76121S3S

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 47A (Tc) 4.5V, 10V 21mOhm @ 47A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRLZ34NSPBF

IRLZ34NSPBF

MOSFET N-CH 55V 30A D2PAK

International Rectifier
763 -

RFQ

IRLZ34NSPBF

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
UPA2201UT1M-T1-AT

UPA2201UT1M-T1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
AUIRLR2703

AUIRLR2703

MOSFET N-CH 30V 20A DPAK

International Rectifier
6,804 -

RFQ

AUIRLR2703

Технические

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) - 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP65R660CFD

IPP65R660CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
4,564 -

RFQ

IPP65R660CFD

Технические

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3991-ZK-E1-AZ

2SK3991-ZK-E1-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SK3991-ZK-E1-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
SPB04N60C3E3045A

SPB04N60C3E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

SPB04N60C3E3045A

Технические

Bulk * Active - - - - - - - - - - - - - -
N0413N-ZK-E1-AY

N0413N-ZK-E1-AY

MOSFET N-CH 40V 100A TO263

Renesas Electronics America Inc
800 -

RFQ

N0413N-ZK-E1-AY

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 10V 3.3mOhm @ 50A, 10V - 100 nC @ 10 V ±20V 5550 pF @ 25 V - 1.5W (Ta), 119W (Tc) 150°C (TJ) Surface Mount
FQPF6N60C

FQPF6N60C

MOSFET N-CH 600V 5.5A TO220F

Fairchild Semiconductor
5,642 -

RFQ

FQPF6N60C

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 810 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S23N06LE

RF1S23N06LE

23A, 60V, 0.065OHM, N-CHANNEL

Harris Corporation
2,400 -

RFQ

RF1S23N06LE

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 5V 65mOhm @ 23A, 5V 2V @ 250µA 48 nC @ 10 V ±10V 850 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ)
IRFW610BTMFP001

IRFW610BTMFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,600 -

RFQ

IRFW610BTMFP001

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 3.13W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF3N80CYDTU

FQPF3N80CYDTU

MOSFET N-CH 800V 3A TO220F-3

Fairchild Semiconductor
1,570 -

RFQ

FQPF3N80CYDTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 5V @ 250µA 16.5 nC @ 10 V ±30V 705 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
В целом 42446 Запись«Предыдущий1... 2930313233343536...2123Следующий»
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь