Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK170N20P

IXFK170N20P

MOSFET N-CH 200V 170A TO264AA

IXYS
2,698 -

RFQ

IXFK170N20P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 14mOhm @ 500mA, 10V 5V @ 1mA 185 nC @ 10 V ±20V 11400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR44N50Q

IXFR44N50Q

MOSFET N-CH 500V 34A ISOPLUS247

IXYS
2,936 -

RFQ

IXFR44N50Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 120mOhm @ 22A, 10V 4V @ 4mA 190 nC @ 10 V ±20V 7000 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFJ26N50P3

IXFJ26N50P3

MOSFET N-CH 500V 14A TO247

IXYS
3,009 -

RFQ

IXFJ26N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 265mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
MMIX1T660N04T4

MMIX1T660N04T4

MOSFET N-CH 40V 660A 24SMPD

IXYS
2,460 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 660A (Tc) 10V 0.85mOhm @ 100A, 10V 4V @ 250µA 860 nC @ 10 V ±15V 44000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFR32N100P

IXFR32N100P

MOSFET N-CH 1000V 18A ISOPLUS247

IXYS
3,860 -

RFQ

IXFR32N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 340mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKT70N60C5-TUB

IXKT70N60C5-TUB

MOSFET N-CH 600V 68A TO268

IXYS
3,921 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 68A (Tc) - - - - - - - - - Surface Mount
IXFX80N50P

IXFX80N50P

MOSFET N-CH 500V 80A PLUS247-3

IXYS
3,801 -

RFQ

IXFX80N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 80A (Tc) 10V 65mOhm @ 40A, 10V 5V @ 8mA 197 nC @ 10 V ±30V 12700 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR230N20T

IXFR230N20T

MOSFET N-CH 200V 156A ISOPLUS247

IXYS
2,641 -

RFQ

IXFR230N20T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 156A (Tc) 10V 8mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX240N15T2

IXFX240N15T2

MOSFET N-CH 150V 240A PLUS247-3

IXYS
2,928 -

RFQ

IXFX240N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 240A (Tc) 10V 5.2mOhm @ 60A, 10V 5V @ 8mA 460 nC @ 10 V ±20V 32000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK34N80

IXFK34N80

MOSFET N-CH 800V 34A TO-264AA

IXYS
3,133 -

RFQ

IXFK34N80

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 17A, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX150N30P3

IXFX150N30P3

MOSFET N-CH 300V 150A PLUS247-3

IXYS
3,743 -

RFQ

IXFX150N30P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 150A (Tc) 10V 19mOhm @ 75A, 10V 5V @ 8mA 197 nC @ 10 V ±20V 12100 pF @ 25 V - 1300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK170N10

IXFK170N10

MOSFET N-CH 100V 170A TO-264AA

IXYS
3,618 -

RFQ

IXFK170N10

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 8mA 515 nC @ 10 V ±20V 10300 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK140N30P

IXTK140N30P

MOSFET N-CH 300V 140A TO264

IXYS
2,083 -

RFQ

IXTK140N30P

Технические

Bulk Polar Active N-Channel MOSFET (Metal Oxide) 300 V 140A (Tc) 10V 24mOhm @ 70A, 10V 5V @ 500µA 185 nC @ 10 V ±20V 14800 pF @ 25 V - - - Through Hole
IXTH58N25L2

IXTH58N25L2

MOSFET N-CH 250V 58A TO247

IXYS
2,547 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 250 V 58A (Tc) 10V 64mOhm @ 29A, 10V 4.5V @ 250µA 330 nC @ 10 V ±20V 9200 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR44N50Q3

IXFR44N50Q3

MOSFET N-CH 500V 25A ISOPLUS247

IXYS
3,991 -

RFQ

IXFR44N50Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 25A (Tc) 10V 154mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN280N07

IXFN280N07

MOSFET N-CH 70V 280A SOT-227B

IXYS
3,811 -

RFQ

IXFN280N07

Технические

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 280A (Tc) 10V 5mOhm @ 120A, 10V 4V @ 8mA 420 nC @ 10 V ±20V 9400 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTT140N075L2HV

IXTT140N075L2HV

MOSFET N-CH 75V 140A TO268HV

IXYS
3,935 -

RFQ

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4.5V @ 250µA 275 nC @ 10 V ±20V 9300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH04N300P3HV

IXTH04N300P3HV

MOSFET N-CH 3000V 400MA TO247HV

IXYS
3,164 -

RFQ

IXTH04N300P3HV

Технические

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 400mA (Tc) 10V 190Ohm @ 200mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 283 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN32N80P

IXFN32N80P

MOSFET N-CH 800V 29A SOT-227B

IXYS
2,486 -

RFQ

IXFN32N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 29A (Tc) 10V 270mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8820 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR40N90P

IXFR40N90P

MOSFET N-CH 900V 21A ISOPLUS247

IXYS
2,170 -

RFQ

IXFR40N90P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 21A (Tc) 10V 230mOhm @ 20A, 10V 6.5V @ 1mA 230 nC @ 10 V ±30V 14000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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