Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTN21N100

IXTN21N100

MOSFET N-CH 1000V 21A SOT227B

IXYS
2,605 -

RFQ

IXTN21N100

Технические

Tube MegaMOS™ Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) 10V 550mOhm @ 500mA, 10V 4.5V @ 500µA 250 nC @ 10 V ±20V 8400 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
VM0550-2F

VM0550-2F

MOSFET N-CH 100V 590A MODULE

IXYS
2,418 -

RFQ

Bulk HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 590A (Tc) - 2.1mOhm @ 500mA, 10V - 2000 nC @ 10 V - 50000 pF @ 25 V - 2200W - Chassis Mount
IXTA1N100P

IXTA1N100P

MOSFET N-CH 1000V 1A TO263

IXYS
3,347 -

RFQ

IXTA1N100P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTY8N70X2

IXTY8N70X2

MOSFET N-CHANNEL 700V 8A TO252

IXYS
2,793 -

RFQ

IXTY8N70X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 500mOhm @ 500mA, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 10 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFY8N65X2

IXFY8N65X2

MOSFET N-CH 650V 8A TO252AA

IXYS
2,416 -

RFQ

IXFY8N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 8A (Tc) 10V 450mOhm @ 4A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 790 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP4N70X2M

IXTP4N70X2M

MOSFET N-CH 700V 4A TO220

IXYS
2,306 -

RFQ

IXTP4N70X2M

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 850mOhm @ 2A, 10V 4.5V @ 250µA 11.8 nC @ 10 V ±30V 386 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFY4N85X

IXFY4N85X

MOSFET N-CH 850V 3.5A TO252

IXYS
2,309 -

RFQ

IXFY4N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP12N50P

IXFP12N50P

MOSFET N-CH 500V 12A TO220AB

IXYS
131 -

RFQ

IXFP12N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 1mA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTU8N70X2

IXTU8N70X2

MOSFET N-CH 700V 8A TO251-3

IXYS
3,346 -

RFQ

IXTU8N70X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 500mOhm @ 500mA, 10V 4.5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 10 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP8N70X2

IXTP8N70X2

MOSFET N-CH 700V 8A TO220-3

IXYS
3,911 -

RFQ

IXTP8N70X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 500mOhm @ 500mA, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 10 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA160N04T2

IXTA160N04T2

MOSFET N-CH 40V 160A TO263

IXYS
3,180 -

RFQ

IXTA160N04T2

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 5mOhm @ 50A, 10V 4V @ 250µA 79 nC @ 10 V ±20V 4640 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT30N85XHV

IXFT30N85XHV

MOSFET N-CH 850V 30A TO268

IXYS
2,968 -

RFQ

IXFT30N85XHV

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 30A (Tc) 10V 220mOhm @ 500mA, 10V 5.5V @ 2.5mA 68 nC @ 10 V ±30V 2460 pF @ 25 V - 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA4N85X

IXFA4N85X

MOSFET N-CH 850V 3.5A TO263

IXYS
3,055 -

RFQ

IXFA4N85X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 3.5A (Tc) 10V 2.5Ohm @ 2A, 10V 5.5V @ 250µA 7 nC @ 10 V ±30V 247 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP20N50P3M

IXFP20N50P3M

MOSFET N-CH 500V 8A TO220AB

IXYS
3,565 -

RFQ

IXFP20N50P3M

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 58W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP50N20PM

IXTP50N20PM

MOSFET N-CH 200V 20A TO220

IXYS
3,872 -

RFQ

IXTP50N20PM

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP20N50P3

IXFP20N50P3

MOSFET N-CH 500V 8A TO220AB

IXYS
3,063 -

RFQ

IXFP20N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 300mOhm @ 10A, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1800 pF @ 25 V - 380W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP130N10T2

IXFP130N10T2

MOSFET N-CH 100V 130A TO220AB

IXYS
3,889 -

RFQ

IXFP130N10T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 65A, 10V 4.5V @ 1mA 130 nC @ 10 V ±20V 6600 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP16N50P3

IXFP16N50P3

MOSFET N-CH 500V 16A TO220AB

IXYS
2,338 -

RFQ

IXFP16N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 360mOhm @ 8A, 10V 5V @ 2.5mA 29 nC @ 10 V ±30V 1515 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ450P2

IXTQ450P2

MOSFET N-CH 500V 16A TO3P

IXYS
3,877 -

RFQ

IXTQ450P2

Технические

Tube PolarP2™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 330mOhm @ 8A, 10V 4.5V @ 250µA 43 nC @ 10 V ±30V 2530 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP16N60P3

IXFP16N60P3

MOSFET N-CH 600V 16A TO220

IXYS
2,070 -

RFQ

IXFP16N60P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 470mOhm @ 500mA, 10V 5V @ 1.5mA 36 nC @ 10 V ±30V 1830 pF @ 25 V - 347W (Tc) -55°C ~ 150°C (TJ) Through Hole
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