Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT48P20P

IXTT48P20P

MOSFET P-CH 200V 48A TO268

IXYS
3,796 -

RFQ

IXTT48P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 48A (Tc) 10V 85mOhm @ 24A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5400 pF @ 25 V - 462W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA60N20X4

IXTA60N20X4

MOSFET ULTRA X4 200V 60A TO-263

IXYS
343 -

RFQ

IXTA60N20X4

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 21mOhm @ 30A, 10V 4.5V @ 250µA 33 nC @ 10 V ±20V 2450 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT11P50

IXTT11P50

MOSFET P-CH 500V 11A TO268

IXYS
2,716 -

RFQ

IXTT11P50

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 750mOhm @ 5.5A, 10V 5V @ 250µA 130 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16N50D2

IXTT16N50D2

MOSFET N-CH 500V 16A TO268

IXYS
101 -

RFQ

IXTT16N50D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 0V 240mOhm @ 8A, 0V - 199 nC @ 5 V ±20V 5250 pF @ 25 V Depletion Mode 695W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT50N85XHV

IXFT50N85XHV

MOSFET N-CH 850V 50A TO268

IXYS
979 -

RFQ

IXFT50N85XHV

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 850 V 50A (Tc) 10V 105mOhm @ 500mA, 10V 5.5V @ 4mA 152 nC @ 10 V ±30V 4480 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX160N30T

IXFX160N30T

MOSFET N-CH 300V 160A PLUS247-3

IXYS
930 -

RFQ

IXFX160N30T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 160A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 1390W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH44N50Q3

IXFH44N50Q3

MOSFET N-CH 500V 44A TO247AD

IXYS
3,839 -

RFQ

IXFH44N50Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT16N120P

IXFT16N120P

MOSFET N-CH 1200V 16A TO268

IXYS
114 -

RFQ

IXFT16N120P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 500mA, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTX90P20P

IXTX90P20P

MOSFET P-CH 200V 90A PLUS247-3

IXYS
361 -

RFQ

IXTX90P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 10V 44mOhm @ 22A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX32N100P

IXFX32N100P

MOSFET N-CH 1000V 32A PLUS247-3

IXYS
1,240 -

RFQ

IXFX32N100P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 32A (Tc) 10V 320mOhm @ 16A, 10V 6.5V @ 1mA 225 nC @ 10 V ±30V 14200 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT2N170D2

IXTT2N170D2

MOSFET N-CH 1700V 2A TO268

IXYS
520 -

RFQ

IXTT2N170D2

Технические

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1700 V 2A (Tj) - 6.5Ohm @ 1A, 0V - 110 nC @ 5 V ±20V 3650 pF @ 25 V Depletion Mode 568W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTN102N65X2

IXTN102N65X2

MOSFET N-CH 650V 76A SOT227

IXYS
220 -

RFQ

IXTN102N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 30mOhm @ 51A, 10V 5V @ 250µA 152 nC @ 10 V ±30V 10900 pF @ 25 V - 595AW (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTX46N50L

IXTX46N50L

MOSFET N-CH 500V 46A PLUS247-3

IXYS
1,140 -

RFQ

IXTX46N50L

Технические

Tube Linear Active N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 20V 160mOhm @ 500mA, 20V 6V @ 250µA 260 nC @ 15 V ±30V 7000 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK210N30X3

IXFK210N30X3

MOSFET N-CH 300V 210A TO264

IXYS
107 -

RFQ

IXFK210N30X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 300 V 210A (Tc) 10V 5.5mOhm @ 105A, 10V 4.5V @ 8mA 375 nC @ 10 V ±20V 24200 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN132N50P3

IXFN132N50P3

MOSFET N-CH 500V 112A SOT227B

IXYS
262 -

RFQ

IXFN132N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 112A (Tc) 10V 39mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
MCB60I1200TZ

MCB60I1200TZ

1200V 90A SIC POWER MOSFET

IXYS
2,597 -

RFQ

MCB60I1200TZ

Технические

Tube * Obsolete - - - - - - - - - - - - - -
IXFH150N25X3HV

IXFH150N25X3HV

MOSFET N-CH

IXYS
3,367 -

RFQ

IXFH150N25X3HV

Технические

Tube HiPerFET™, Ultra X3 Active - - - - - - - - - - - - - -
IXTH06N220P3HV

IXTH06N220P3HV

MOSFET N-CH 2200V 600MA TO247HV

IXYS
3,248 -

RFQ

IXTH06N220P3HV

Технические

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 2200 V 600mA (Tc) 10V 80Ohm @ 300mA, 10V 4V @ 250µA 10.4 nC @ 10 V ±20V 290 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTK240N075L2

IXTK240N075L2

MOSFET N-CH 75V 240A TO264

IXYS
2,137 -

RFQ

IXTK240N075L2

Технические

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 7mOhm @ 120A, 10V 4.5V @ 3mA 546 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY1R4N60P TRL

IXTY1R4N60P TRL

MOSFET N-CH 600V 1.4A TO252

IXYS
2,347 -

RFQ

IXTY1R4N60P TRL

Технические

Tape & Reel (TR) Polar™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 9Ohm @ 700mA, 10V 5.5V @ 25µA 5.2 nC @ 10 V ±30V 140 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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