Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTA340N04T4

IXTA340N04T4

MOSFET N-CH 40V 340A TO263AA

IXYS
228 -

RFQ

IXTA340N04T4

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.7mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY08N100D2-TRL

IXTY08N100D2-TRL

MOSFET N-CH 1000V 800MA TO252

IXYS
2,797 -

RFQ

Tape & Reel (TR) Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tj) 0V 21Ohm @ 400mA, 0V 4V @ 25µA 14.6 nC @ 5 V ±20V 325 pF @ 25 V Depletion Mode 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA4N80P-TRL

IXTA4N80P-TRL

MOSFET N-CH 800V 3.6A TO263

IXYS
2,499 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3.4Ohm @ 1.8A, 10V 5.5V @ 100µA 14.2 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA1N100P-TRL

IXTA1N100P-TRL

MOSFET N-CH 1000V 1A TO263

IXYS
3,344 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 1A (Tc) 10V 15Ohm @ 500mA, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±20V 331 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP10N80P

IXFP10N80P

MOSFET N-CH 800V 10A TO220AB

IXYS
282 -

RFQ

IXFP10N80P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 1.1Ohm @ 5A, 10V 5.5V @ 2.5mA 40 nC @ 10 V ±30V 2050 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA36N60X3

IXFA36N60X3

MOSFET ULTRA JCT 600V 36A TO263

IXYS
104 -

RFQ

IXFA36N60X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 5V @ 2.5mA 29 nC @ 10 V ±20V 2030 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH20N65X2

IXTH20N65X2

MOSFET N-CH 650V 20A TO247

IXYS
280 -

RFQ

IXTH20N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 185mOhm @ 10A, 10V 4.5V @ 250µA 27 nC @ 10 V ±30V 1450 pF @ 25 V - 290W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ50N25T

IXTQ50N25T

MOSFET N-CH 250V 50A TO3P

IXYS
274 -

RFQ

IXTQ50N25T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 60mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTY90N055T2-TRL

IXTY90N055T2-TRL

MOSFET N-CH 55V 90A TO252

IXYS
2,530 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 90A (Tc) 10V 8.4mOhm @ 25A, 10V 4V @ 250µA 42 nC @ 10 V ±20V 2770 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY2N100P-TRL

IXTY2N100P-TRL

MOSFET N-CH 1000V 2A TO252

IXYS
2,818 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 2A (Tc) 10V 7.5Ohm @ 1A, 10V 4.5V @ 100µA 24.3 nC @ 10 V ±20V 655 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ26P20P

IXTQ26P20P

MOSFET P-CH 200V 26A TO3P

IXYS
300 -

RFQ

IXTQ26P20P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 170mOhm @ 13A, 10V 4V @ 250µA 56 nC @ 10 V ±20V 2740 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH34N65X3

IXFH34N65X3

MOSFET 34A 650V X3 TO247

IXYS
545 -

RFQ

IXFH34N65X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5.2V @ 2.5mA 29 nC @ 10 V ±20V 2025 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA70N075T2-TRL

IXTA70N075T2-TRL

MOSFET N-CH 75V 70A TO263

IXYS
2,005 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 70A (Tc) 10V 12mOhm @ 25A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 2725 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA100N04T2-TRL

IXTA100N04T2-TRL

MOSFET N-CH 40V 100A TO263

IXYS
3,273 -

RFQ

Tape & Reel (TR) TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 7mOhm @ 25A, 10V 4V @ 250µA 25.5 nC @ 10 V ±20V 2690 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTY08N100P-TRL

IXTY08N100P-TRL

MOSFET N-CH 1000V 800MA TO252

IXYS
2,859 -

RFQ

Tape & Reel (TR) Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 800mA (Tc) 10V 20Ohm @ 400mA, 10V 4V @ 50µA 11.3 nC @ 10 V ±20V 240 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFP34N65X3

IXFP34N65X3

MOSFET 34A 650V X3 TO220

IXYS
800 -

RFQ

IXFP34N65X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) - 100mOhm @ 17A, 10V 5.2V @ 2.5mA 29 nC @ 10 V ±20V 2025 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFA34N65X3

IXFA34N65X3

MOSFET 34A 650V X3 TO263

IXYS
774 -

RFQ

IXFA34N65X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5.2V @ 2.5mA 29 nC @ 10 V ±20V 2025 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH36N60X3

IXFH36N60X3

MOSFET ULTRA JCT 600V 36A TO247

IXYS
390 -

RFQ

IXFH36N60X3

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 5V @ 2.5mA 29 nC @ 10 V ±20V 2030 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP26N50P3

IXFP26N50P3

MOSFET N-CH 500V 26A TO220AB

IXYS
139 -

RFQ

IXFP26N50P3

Технические

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 230mOhm @ 13A, 10V 5V @ 4mA 42 nC @ 10 V ±30V 2220 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N50P

IXFH30N50P

MOSFET N-CH 500V 30A TO247AD

IXYS
187 -

RFQ

IXFH30N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 4mA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
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