Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

SICFET N-CH 1200V 52A TO247-3

Infineon Technologies
3,182 -

RFQ

Bulk,Tube Automotive, AEC-Q101, CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) - 59mOhm @ 20A, 15V 5.7V @ 10mA 57 nC @ 15 V +20V, -7V 2130 pF @ 800 V - 228W (Tc) -40°C ~ 175°C (TJ) Through Hole
IXFT170N25X3HV

IXFT170N25X3HV

MOSFET N-CH 250V 170A TO268HV

IXYS
3,612 -

RFQ

IXFT170N25X3HV

Технические

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 170A (Tc) 10V 7.4mOhm @ 85A, 10V 4.5V @ 4mA 190 nC @ 10 V ±20V 13500 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTX40P50P

IXTX40P50P

MOSFET P-CH 500V 40A PLUS247-3

IXYS
2,516 -

RFQ

IXTX40P50P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 230mOhm @ 20A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R055CFD7ATMA1

IPB60R055CFD7ATMA1

MOSFET N-CH 650V 38A TO263-3-2

Infineon Technologies
3,743 -

RFQ

IPB60R055CFD7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 38A (Tc) 10V 55mOhm @ 18A, 10V 4.5V @ 900µA 79 nC @ 10 V ±20V 3194 pF @ 400 V - 178W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK170P10P

IXTK170P10P

MOSFET P-CH 100V 170A TO264

IXYS
3,169 -

RFQ

IXTK170P10P

Технические

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 100 V 170A (Tc) 10V 12mOhm @ 500mA, 10V 4V @ 1mA 240 nC @ 10 V ±20V 12600 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN180N25T

IXFN180N25T

MOSFET N-CH 250V 168A SOT227B

IXYS
2,616 -

RFQ

IXFN180N25T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 168A (Tc) 10V 12.9mOhm @ 60A, 10V 5V @ 8mA 345 nC @ 10 V ±20V 28000 pF @ 25 V - 900W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
NVBG020N090SC1

NVBG020N090SC1

SICFET N-CH 900V 9.8A/112A D2PAK

onsemi
3,573 -

RFQ

NVBG020N090SC1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 900 V 9.8A (Ta), 112A (Tc) 15V 28mOhm @ 60A, 15V 4.3V @ 20mA 200 nC @ 15 V +19V, -10V 4415 pF @ 450 V - 3.7W (Ta), 477W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFK230N20T

IXFK230N20T

MOSFET N-CH 200V 230A TO264AA

IXYS
2,017 -

RFQ

IXFK230N20T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 230A (Tc) 10V 7.5mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 1670W (Tc) - Through Hole
VS-FC420SA15

VS-FC420SA15

MOSFET N-CH 150V 400A SOT227

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

VS-FC420SA15

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 150 V 400A (Tc) 10V 2.75mOhm @ 200A, 10V 5.4V @ 1mA 250 nC @ 10 V ±20V 13700 pF @ 25 V - 909W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFK48N50

IXFK48N50

MOSFET N-CH 500V 48A TO264AA

IXYS
2,784 -

RFQ

IXFK48N50

Технические

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 100mOhm @ 24A, 10V 4V @ 8mA 270 nC @ 10 V ±20V 8400 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN360N10T

IXFN360N10T

MOSFET N-CH 100V 360A SOT-227B

IXYS
3,819 -

RFQ

IXFN360N10T

Технические

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 360A (Tc) 10V 2.6mOhm @ 180A, 10V 4.5V @ 250µA 505 nC @ 10 V ±20V 36000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IXFN180N15P

IXFN180N15P

MOSFET N-CH 150V 150A SOT-227B

IXYS
2,743 -

RFQ

IXFN180N15P

Технические

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 11mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 680W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IMW120R030M1HXKSA1

IMW120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-3

Infineon Technologies
2,258 -

RFQ

IMW120R030M1HXKSA1

Технические

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK24N100Q3

IXFK24N100Q3

MOSFET N-CH 1000V 24A TO264AA

IXYS
3,059 -

RFQ

IXFK24N100Q3

Технические

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 440mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFN64N50P

IXFN64N50P

MOSFET N-CH 500V 61A SOT227B

IXYS
2,521 -

RFQ

IXFN64N50P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 61A (Tc) 10V 85mOhm @ 32A, 10V 5.5V @ 8mA 150 nC @ 10 V ±30V 8700 pF @ 25 V - 700W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IMZ120R030M1HXKSA1

IMZ120R030M1HXKSA1

SICFET N-CH 1.2KV 56A TO247-4

Infineon Technologies
3,430 -

RFQ

IMZ120R030M1HXKSA1

Технические

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 56A (Tc) 15V, 18V 40mOhm @ 25A, 18V 5.7V @ 10mA 63 nC @ 18 V +23V, -7V 2120 pF @ 800 V - 227W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX360N15T2

IXFX360N15T2

MOSFET N-CH 150V 360A PLUS247-3

IXYS
3,588 -

RFQ

IXFX360N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 360A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTH4L040N120SC1

NTH4L040N120SC1

SICFET N-CH 1200V 58A TO247-4

onsemi
3,648 -

RFQ

NTH4L040N120SC1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 58A (Tc) 20V 56mOhm @ 35A, 20V 4.3V @ 10mA 106 nC @ 20 V +25V, -15V 1762 pF @ 800 V - 319W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVHL020N090SC1

NVHL020N090SC1

SICFET N-CH 900V 118A TO247-3

onsemi
3,476 -

RFQ

NVHL020N090SC1

Технические

Tube Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 900 V 118A (Tc) 15V 28mOhm @ 60A, 15V 4.3V @ 20mA 196 nC @ 15 V +19V, -10V 4415 pF @ 450 V - 503W (Tc) -55°C ~ 175°C (TJ) Through Hole
NVBG020N120SC1

NVBG020N120SC1

MOSFET N-CH 1200V 8.6A/98A D2PAK

onsemi
2,435 -

RFQ

NVBG020N120SC1

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel SiCFET (Silicon Carbide) 1200 V 8.6A (Ta), 98A (Tc) 20V 28mOhm @ 60A, 20V 4.3V @ 20mA 220 nC @ 20 V +25V, -15V 2943 pF @ 800 V - 3.7W (Ta), 468W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ производители
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