Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF3P50

FQPF3P50

MOSFET P-CH 500V 1.9A TO220F

onsemi
2,509 -

RFQ

FQPF3P50

Технические

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 500 V 1.9A (Tc) 10V 4.9Ohm @ 950mA, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76419D3ST

HUF76419D3ST

MOSFET N-CH 60V 20A TO252AA

onsemi
2,082 -

RFQ

HUF76419D3ST

Технические

Tape & Reel (TR) UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 37mOhm @ 20A, 10V 3V @ 250µA 27.5 nC @ 10 V ±16V 900 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQU2N80TU

FQU2N80TU

MOSFET N-CH 800V 1.8A IPAK

onsemi
2,880 -

RFQ

FQU2N80TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.3Ohm @ 900mA, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF2N60

FQPF2N60

MOSFET N-CH 600V 1.6A TO220F

onsemi
2,156 -

RFQ

FQPF2N60

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.6A (Tc) 10V 4.7Ohm @ 800mA, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP2N80

FQP2N80

MOSFET N-CH 800V 2.4A TO220-3

onsemi
3,000 -

RFQ

FQP2N80

Технические

Bulk,Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.4A (Tc) 10V 6.3Ohm @ 1.2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 550 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD24N08TF

FQD24N08TF

MOSFET N-CH 80V 19.6A DPAK

onsemi
2,137 -

RFQ

FQD24N08TF

Технические

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 19.6A (Tc) 10V 60mOhm @ 9.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD24N08TM

FQD24N08TM

MOSFET N-CH 80V 19.6A DPAK

onsemi
2,220 -

RFQ

FQD24N08TM

Технические

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 19.6A (Tc) 10V 60mOhm @ 9.8A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQPF4N50

FQPF4N50

MOSFET N-CH 500V 2.3A TO220F

onsemi
2,687 -

RFQ

FQPF4N50

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 2.7Ohm @ 1.15A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU2N60TU

FQU2N60TU

MOSFET N-CH 600V 2A IPAK

onsemi
2,778 -

RFQ

FQU2N60TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.7Ohm @ 1A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N50CFTU

FQPF5N50CFTU

MOSFET N-CH 500V 5A TO220F

onsemi
3,827 -

RFQ

FQPF5N50CFTU

Технические

Tube FRFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.55Ohm @ 2.5A, 10V 4V @ 250µA 24 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD2N100TF

FQD2N100TF

MOSFET N-CH 1000V 1.6A DPAK

onsemi
2,800 -

RFQ

FQD2N100TF

Технические

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.6A (Tc) 10V 9Ohm @ 800mA, 10V 5V @ 250µA 15.5 nC @ 10 V ±30V 520 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB10N20TM

FQB10N20TM

MOSFET N-CH 200V 10A D2PAK

onsemi
2,519 -

RFQ

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 10A (Tc) 10V 360mOhm @ 5A, 10V 5V @ 250µA 18 nC @ 10 V ±30V 670 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
FQP7N40

FQP7N40

MOSFET N-CH 400V 7A TO220-3

onsemi
2,195 -

RFQ

FQP7N40

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 7A (Tc) 10V 800mOhm @ 3.5A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 780 pF @ 25 V - 98W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQD5N50TM

FQD5N50TM

MOSFET N-CH 500V 3.5A DPAK

onsemi
3,417 -

RFQ

FQD5N50TM

Технические

Tape & Reel (TR) QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.8Ohm @ 1.75A, 10V 5V @ 250µA 17 nC @ 10 V ±30V 610 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2399DS-T1-GE3

SI2399DS-T1-GE3

MOSFET P-CH 20V 6A SOT23-3

Vishay Siliconix
3,328 -

RFQ

SI2399DS-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 2.5V, 10V 34mOhm @ 5.1A, 10V 1.5V @ 250µA 20 nC @ 4.5 V ±12V 835 pF @ 10 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP45H150DHE-13

DMP45H150DHE-13

MOSFET P-CH 450V 250MA SOT223

Diodes Incorporated
3,382 -

RFQ

DMP45H150DHE-13

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 450 V 250mA (Tc) 10V 150Ohm @ 50mA, 10V 4V @ 250µA 1.8 nC @ 10 V ±30V 59.2 pF @ 25 V - 13.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS138 RFG

BSS138 RFG

50V, 0.26A, SINGLE N-CHANNEL POW

Taiwan Semiconductor Corporation
2,928 -

RFQ

BSS138 RFG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 260mA (Ta) 4.5V, 10V 2.5Ohm @ 260mA, 10V 1.6V @ 250µA 2 nC @ 10 V ±20V 32 pF @ 25 V - 357mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN4020LFDE-7

DMN4020LFDE-7

MOSFET N-CH 40V 8A 6UDFN

Diodes Incorporated
2,492 -

RFQ

DMN4020LFDE-7

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 8A (Ta) 4.5V, 10V 20mOhm @ 8A, 10V 2.4V @ 250µA 19.1 nC @ 10 V ±20V 1060 pF @ 20 V - 660mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2310B-TP

SI2310B-TP

MOSFET N-CH 60V 3A SOT23

Micro Commercial Co
3,679 -

RFQ

SI2310B-TP

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tj) 4.5V, 10V 105mOhm @ 3A, 10V 1.3V @ 250µA 6 nC @ 4.5 V ±16V 247 pF @ 30 V - 1.2W -55°C ~ 150°C (TJ) Surface Mount
SI3421DV-T1-GE3

SI3421DV-T1-GE3

MOSFET P-CH 30V 8A 6TSOP

Vishay Siliconix
2,917 -

RFQ

SI3421DV-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 8A (Tc) 4.5V, 10V 19.2mOhm @ 7A, 10V 3V @ 250µA 69 nC @ 10 V ±20V 2580 pF @ 15 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь