Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APT35SM70B

APT35SM70B

SICFET N-CH 700V 35A TO247-3

Microsemi Corporation
2,319 -

RFQ

APT35SM70B

Технические

Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 700 V 35A (Tc) 20V 145mOhm @ 10A, 20V 2.5V @ 1mA 67 nC @ 20 V +25V, -10V 1035 pF @ 700 V - 176W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT35SM70S

APT35SM70S

SICFET 700V 35A TO247-3

Microsemi Corporation
2,886 -

RFQ

APT35SM70S

Технические

Bulk - Obsolete - SiCFET (Silicon Carbide) 700 V 35A - - - - - - - - - Through Hole
APT5SM170B

APT5SM170B

SICFET N-CH 1700V 5A TO247-3

Microsemi Corporation
3,474 -

RFQ

APT5SM170B

Технические

Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 5A (Tc) 20V 1.25Ohm @ 2.5A, 20V 3.2V @ 500µA 21 nC @ 20 V +25V, -10V 249 pF @ 1000 V - 65W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT5SM170S

APT5SM170S

SICFET N-CH 1700V 4.6A D3PAK

Microsemi Corporation
2,713 -

RFQ

Bulk - Obsolete N-Channel SiCFET (Silicon Carbide) 1700 V 4.6A (Tc) 20V 1.2Ohm @ 2A, 20V 3.2V @ 500µA 29 nC @ 20 V +25V, -10V 325 pF @ 1000 V - 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
JANSF2N7383

JANSF2N7383

P CHANNEL MOSFET TO-257

Microsemi Corporation
2,146 -

RFQ

Bulk - Obsolete - - - 6.5A (Tc) - - - - - - - - - -
JANSR2N7261U

JANSR2N7261U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation
3,332 -

RFQ

JANSR2N7261U

Технические

Tray Military, MIL-PRF-19500/601 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 12V 185mOhm @ 8A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Surface Mount
JANSR2N7262U

JANSR2N7262U

MOSFET N-CH 200V 5.5A 18ULCC

Microsemi Corporation
2,224 -

RFQ

JANSR2N7262U

Технические

Tray Military, MIL-PRF-19500/601 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 12V 364mOhm @ 5.5A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Surface Mount
JANSR2N7268U

JANSR2N7268U

MOSFET N-CH 100V 34A U1

Microsemi Corporation
3,122 -

RFQ

JANSR2N7268U

Технические

Tray Military, MIL-PRF-19500/603 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 34A (Tc) 12V 70mOhm @ 34A, 12V 4V @ 1mA 160 nC @ 12 V ±20V - - 150W (Tc) -55°C ~ 150°C Surface Mount
JANSR2N7269

JANSR2N7269

MOSFET N-CH 200V 26A TO254AA

Microsemi Corporation
2,938 -

RFQ

JANSR2N7269

Технические

Tray Military, MIL-PRF-19500/603 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 12V 110mOhm @ 26A, 12V 4V @ 1mA 170 nC @ 12 V ±20V - - 150W (Tc) -55°C ~ 150°C Through Hole
JANSR2N7269U

JANSR2N7269U

MOSFET N-CH 200V 26A U1

Microsemi Corporation
3,324 -

RFQ

JANSR2N7269U

Технические

Tray Military, MIL-PRF-19500/603 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 12V 110mOhm @ 26A, 12V 4V @ 1mA 170 nC @ 12 V ±20V - - 150W (Tc) -55°C ~ 150°C Surface Mount
JANSR2N7380

JANSR2N7380

MOSFET N-CH 100V 14.4A TO257

Microsemi Corporation
3,807 -

RFQ

JANSR2N7380

Технические

Tray Military, MIL-PRF-19500/614 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14.4A (Tc) 12V 200mOhm @ 14.4A, 12V 4V @ 1mA 40 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANSR2N7381

JANSR2N7381

MOSFET N-CH 200V 9.4A TO257

Microsemi Corporation
3,064 -

RFQ

JANSR2N7381

Технические

Tray Military, MIL-PRF-19500/614 Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.4A (Tc) 12V 490mOhm @ 9.4A, 12V 4V @ 1mA 50 nC @ 12 V ±20V - - 2W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
JANSR2N7389

JANSR2N7389

MOSFET P-CH 100V 6.5A TO205AF

Microsemi Corporation
3,897 -

RFQ

JANSR2N7389

Технические

Tray Military, MIL-PRF-19500/630 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Through Hole
JANSR2N7389U

JANSR2N7389U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation
2,295 -

RFQ

JANSR2N7389U

Технические

Tray Military, MIL-PRF-19500/630 Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 12V 350mOhm @ 6.5A, 12V 4V @ 1mA 45 nC @ 12 V ±20V - - 25W (Tc) -55°C ~ 150°C Surface Mount
MSC280SMA120S

MSC280SMA120S

SICFET N-CH 1.2KV D3PAK

Microsemi Corporation
3,885 -

RFQ

MSC280SMA120S

Технические

Tube - Obsolete N-Channel SiCFET (Silicon Carbide) 1200 V - - - - - - - - - -55°C ~ 175°C (TJ) Surface Mount
APT6017LFLLG

APT6017LFLLG

MOSFET N-CH 600V 35A TO264

Microsemi Corporation
3,211 -

RFQ

APT6017LFLLG

Технические

Tube POWER MOS 7® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 170mOhm @ 17.5A, 10V 5V @ 2.5mA 100 nC @ 10 V ±30V 4500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT36N90BC3G

APT36N90BC3G

MOSFET N-CH 900V 36A TO247

Microsemi Corporation
2,823 -

RFQ

APT36N90BC3G

Технические

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 18A, 10V 3.5V @ 2.9mA 252 nC @ 10 V ±20V 7463 pF @ 25 V Super Junction 390W (Tc) -55°C ~ 150°C (TJ) Through Hole
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