Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STW42N60M2-EPMOSFET N-CH 600V 34A TO247 STMicroelectronics |
3,140 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ M2-EP | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 34A (Tc) | 10V | 87mOhm @ 17A, 10V | 4.75V @ 250µA | 55 nC @ 10 V | ±25V | 2370 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | Through Hole |
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STWA75N65DM6N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics |
3,484 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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STWA65N65DM2AGMOSFET N-CH 650V 60A TO247 STMicroelectronics |
3,330 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STP12N120K5MOSFET N-CH 1200V 12A TO220 STMicroelectronics |
2,721 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW68N65DM6-4AGMOSFET N-CH 650V 72A TO247-4 STMicroelectronics |
3,614 | - |
RFQ |
![]() Технические |
Tube | Automotive, AEC-Q101, MDmesh™ | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 72A (Tc) | - | 39mOhm @ 36A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5900 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STFW12N120K5MOSFET N-CH 1200V 12A ISOWATT STMicroelectronics |
2,042 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2 nC @ 10 V | ±30V | 1370 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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STW75N65DM6-4N-CHANNEL 650 V, 33 MOHM TYP., 7 STMicroelectronics |
100 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 75A (Tc) | 10V | 36mOhm @ 37.5A, 10V | 4.75V @ 250µA | 118 nC @ 10 V | ±25V | 5700 pF @ 100 V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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STFW69N65M5MOSFET N-CH 650V 58A ISOWATT STMicroelectronics |
3,724 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ V | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 58A (Tc) | 10V | 45mOhm @ 29A, 10V | 5V @ 250µA | 143 nC @ 10 V | ±25V | 6420 pF @ 100 V | - | 79W (Tc) | 150°C (TJ) | Through Hole |
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SCT1000N170HIP247 IN LINE STMicroelectronics |
3,521 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 7A (Tc) | 20V | 1.3Ohm @ 3A, 20V | 3.5V @ 1mA | 13.3 nC @ 20 V | +22V, -10V | 133 pF @ 1000 V | - | 96W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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SCTH40N120G2V-7SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
2,793 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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STW48NM60NMOSFET N-CH 600V 44A TO247 STMicroelectronics |
2,446 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 44A (Tc) | 10V | 70mOhm @ 20A, 10V | 4V @ 250µA | 124 nC @ 10 V | ±25V | 4285 pF @ 50 V | - | 330W (Tc) | 150°C (TJ) | Through Hole |
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SCTL35N65G2VTRANS SJT N-CH 650V PWRFLAT HV STMicroelectronics |
2,317 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | - | 67mOhm @ 20A, 20V | 5V @ 1mA | 73 nC @ 20 V | +22V, -10V | 1370 pF @ 400 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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STD37P3H6AGMOSFET P-CH 30V 49A DPAK STMicroelectronics |
3,195 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ H6 | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 49A (Tc) | 10V | 15mOhm @ 25A, 10V | 4V @ 250µA | 30.6 nC @ 10 V | ±20V | 1630 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SCTW40N120G2VSILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
3,332 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 100mOhm @ 20A, 18V | 4.9V @ 1mA | 61 nC @ 18 V | +22V, -10V | 1233 pF @ 800 V | - | 278W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |
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STL23NS3LLH7MOSFET N-CH 30V 92A POWERFLAT STMicroelectronics |
2,524 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | STripFET™ H7 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 92A (Tc) | 4.5V, 10V | 3.7mOhm @ 11.5A, 10V | 2.3V @ 1mA | 13.7 nC @ 4.5 V | ±20V | 2100 pF @ 15 V | - | 2.9W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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STF12N60M2MOSFET N-CH 600V 9A TO220FP STMicroelectronics |
3,552 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ M2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±25V | 538 pF @ 100 V | - | 25W (Tc) | 150°C (TJ) | Through Hole |
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STU16N60M2MOSFET N-CH 600V 12A IPAK STMicroelectronics |
2,190 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ M2 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±25V | 700 pF @ 100 V | - | 110W (Tc) | 150°C (TJ) | Through Hole |
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STFU15N80K5MOSFET N-CH 800V 14A TO220FP STMicroelectronics |
3,207 | - |
RFQ |
![]() Технические |
Tube | MDmesh™ K5 | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 14A (Tc) | 10V | 375mOhm @ 7A, 10V | 5V @ 100µA | 32 nC @ 10 V | ±30V | 1100 pF @ 100 V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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SCTL90N65G2VSILICON CARBIDE POWER MOSFET 650 STMicroelectronics |
2,902 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 40A (Tc) | 18V | 24mOhm @ 40A, 18V | 5V @ 1mA | 157 nC @ 18 V | +22V, -10V | 3380 pF @ 400 V | - | 935W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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SCTWA60N120G2-4SILICON CARBIDE POWER MOSFET 120 STMicroelectronics |
2,516 | - |
RFQ |
![]() Технические |
Tube | - | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 60A (Tc) | 18V | 52mOhm @ 30A, 18V | 5V @ 1mA | 94 nC @ 18 V | +22V, -10V | 1969 pF @ 800 V | - | 388W (Tc) | -55°C ~ 200°C (TJ) | Through Hole |