Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN7R8-120ESQ

PSMN7R8-120ESQ

POWER FIELD-EFFECT TRANSISTOR, 7

NXP USA Inc.
430 -

RFQ

PSMN7R8-120ESQ

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
TPIC2322LD

TPIC2322LD

SMALL SIGNAL N-CHANNEL MOSFET

Texas Instruments
330 -

RFQ

TPIC2322LD

Технические

Bulk * Active - - - - - - - - - - - - - -
2SJ263

2SJ263

POWER MOSFET FOR MOTOR DRIVERS

onsemi
6,780 -

RFQ

2SJ263

Технические

Bulk * Active - - - - - - - - - - - - - -
FDS6690

FDS6690

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
4,985 -

RFQ

FDS6690

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 3V @ 250µA 18 nC @ 5 V ±20V 1340 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD6670AL_NL

FDD6670AL_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,176 -

RFQ

FDD6670AL_NL

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3845 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
UPA2810T1L-E1-AY

UPA2810T1L-E1-AY

MOSFET P-CH 30V 13A 8DFN

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) - 12mOhm @ 13A, 10V 2.5V @ 1mA 40 nC @ 10 V - 1860 pF @ 10 V - 1.5W (Ta) 150°C (TJ) Surface Mount
FQI12N60CTU

FQI12N60CTU

MOSFET N-CH 600V 12A I2PAK

Fairchild Semiconductor
2,882 -

RFQ

FQI12N60CTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 3.13W (Ta), 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF19N20L

FQAF19N20L

MOSFET N-CH 200V 16A TO3PF

Fairchild Semiconductor
1,659 -

RFQ

FQAF19N20L

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 5V, 10V 140mOhm @ 8A, 10V 2V @ 250µA 35 nC @ 5 V ±20V 2200 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF9N50

FQAF9N50

MOSFET N-CH 500V 7.2A TO3PF

Fairchild Semiconductor
673 -

RFQ

FQAF9N50

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.2A (Tc) 10V 730mOhm @ 3.6A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
HRF3205_NL

HRF3205_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
392 -

RFQ

HRF3205_NL

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7510-55AL127

BUK7510-55AL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,769 -

RFQ

BUK7510-55AL127

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFP18N08

RFP18N08

N-CHANNEL, MOSFET

Harris Corporation
4,075 -

RFQ

RFP18N08

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 10V 100mOhm @ 9A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK1060-AZ

2SK1060-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,526 -

RFQ

2SK1060-AZ

Технические

Bulk * Active - - - - - - - - - - - - - -
RFL4N15

RFL4N15

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
1,482 -

RFQ

RFL4N15

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Tc) 10V 400mOhm @ 2A, 10V 4V @ 1mA - ±20V 850 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75343G3

HUFA75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
821 -

RFQ

HUFA75343G3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9610PBF-BE3

IRF9610PBF-BE3

MOSFET P-CH 200V 1.8A TO220AB

Vishay Siliconix
892 -

RFQ

IRF9610PBF-BE3

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) - 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75639S3ST-F085A

HUFA75639S3ST-F085A

MOSFET N-CH 100V 56A D2PAK

Fairchild Semiconductor
766 -

RFQ

HUFA75639S3ST-F085A

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) - 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP8870-F085

FDP8870-F085

MOSFET N-CH 30V 19A/156A TO220-3

Fairchild Semiconductor
291 -

RFQ

FDP8870-F085

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 156A (Tc) 4.5V, 10V 4.1mOhm @ 35A, 10V 2.5V @ 250µA 132 nC @ 10 V ±20V 5200 pF @ 15 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9620PBF-BE3

IRF9620PBF-BE3

MOSFET P-CH 200V 3.5A TO220AB

Vishay Siliconix
797 -

RFQ

IRF9620PBF-BE3

Технические

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75344S3

HUFA75344S3

MOSFET N-CH 55V 75A I2PAK

Fairchild Semiconductor
9,217 -

RFQ

HUFA75344S3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
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