Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMXB75UPE147

PMXB75UPE147

P-CHANNEL MOSFET

NXP USA Inc.
4,088,434 -

RFQ

PMXB75UPE147

Технические

Bulk * Active - - - - - - - - - - - - - -
PMN70XP115

PMN70XP115

P-CHANNEL MOSFET

NXP USA Inc.
523,475 -

RFQ

PMN70XP115

Технические

Bulk * Active - - - - - - - - - - - - - -
PMZB200UNE315

PMZB200UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
156,850 -

RFQ

PMZB200UNE315

Технические

Bulk * Active - - - - - - - - - - - - - -
PMN70XPE,115

PMN70XPE,115

NOW NEXPERIA PMN70XPE - SC-74

NXP USA Inc.
55,858 -

RFQ

PMN70XPE,115

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.5V, 4.5V 85mOhm @ 2A, 4.5V 1.25V @ 250µA 7.8 nC @ 4.5 V ±12V 602 pF @ 10 V - 500mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN52XP115

PMN52XP115

P-CHANNEL MOSFET

NXP USA Inc.
636,000 -

RFQ

PMN52XP115

Технические

Bulk * Active - - - - - - - - - - - - - -
NX2020P1115

NX2020P1115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
262,000 -

RFQ

NX2020P1115

Технические

Bulk * Active - - - - - - - - - - - - - -
NX2020N2115

NX2020N2115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
255,000 -

RFQ

NX2020N2115

Технические

Bulk * Active - - - - - - - - - - - - - -
PMCM4401VPE084

PMCM4401VPE084

PMCM4401 SMALL SIGNAL FET

NXP USA Inc.
279,000 -

RFQ

PMCM4401VPE084

Технические

Bulk * Active - - - - - - - - - - - - - -
PMDXB550UNE/S500147

PMDXB550UNE/S500147

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
60,000 -

RFQ

PMDXB550UNE/S500147

Технические

Bulk * Active - - - - - - - - - - - - - -
PMXB75UPE/M5147

PMXB75UPE/M5147

P-CHANNEL MOSFET

NXP USA Inc.
45,000 -

RFQ

PMXB75UPE/M5147

Технические

Bulk * Active - - - - - - - - - - - - - -
PMZ290UN315

PMZ290UN315

SMALL SIGNAL FET

NXP USA Inc.
19,000 -

RFQ

PMZ290UN315

Технические

Bulk * Active - - - - - - - - - - - - - -
PMZB380XN,315

PMZB380XN,315

MOSFET N-CH 30V 930MA DFN1006B-3

NXP USA Inc.
243,343 -

RFQ

PMZB380XN,315

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 930mA (Ta) 2.5V, 4.5V 460mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.87 nC @ 4.5 V ±12V 56 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCXB1000UE147

PMCXB1000UE147

P-CHANNEL MOSFET

NXP USA Inc.
235,000 -

RFQ

PMCXB1000UE147

Технические

Bulk * Active - - - - - - - - - - - - - -
PMZB300XN,315

PMZB300XN,315

MOSFET N-CH 20V 1A DFN1006B-3

NXP USA Inc.
230,000 -

RFQ

PMZB300XN,315

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 380mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.94 nC @ 4.5 V ±12V 51 pF @ 20 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB790SN,315

PMZB790SN,315

MOSFET N-CH 60V 650MA DFN1006B-3

NXP USA Inc.
168,722 -

RFQ

PMZB790SN,315

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 650mA (Ta) 4.5V, 10V 940mOhm @ 300mA, 10V 3V @ 250µA 1.37 nC @ 10 V ±20V 35 pF @ 30 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB420UN,315

PMZB420UN,315

MOSFET N-CH 30V 900MA DFN1006B-3

NXP USA Inc.
116,752 -

RFQ

PMZB420UN,315

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 200mA, 4.5V 950mV @ 250µA 0.98 nC @ 4.5 V ±8V 65 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN45EN,135

PMN45EN,135

MOSFET N-CH 30V 5.2A 6TSOP

NXP USA Inc.
450,515 -

RFQ

PMN45EN,135

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 5.2A (Tc) - 40mOhm @ 3A, 10V 2V @ 1mA 6.1 nC @ 4.5 V 20V 495 pF @ 25 V - 1.75W (Tc) 150°C (TJ) Surface Mount
ON5257215

ON5257215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
96,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMFPB8040XP,115

PMFPB8040XP,115

MOSFET P-CH 20V 2.7A HUSON6

NXP USA Inc.
161,589 -

RFQ

PMFPB8040XP,115

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.8V, 4.5V 102mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6 nC @ 4.5 V ±12V 550 pF @ 10 V Schottky Diode (Isolated) 485mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN27XPE115

PMN27XPE115

SMALL SIGNAL FET

NXP USA Inc.
34,557 -

RFQ

PMN27XPE115

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 1.25V @ 250µA 22.5 nC @ 4.5 V ±12V 1770 pF @ 10 V - 530mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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