Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK754R0-40C,127

BUK754R0-40C,127

MOSFET N-CH 40V 100A TO220AB

NXP USA Inc.
989 -

RFQ

BUK754R0-40C,127

Технические

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) - 4mOhm @ 25A, 10V 4V @ 1mA 97 nC @ 10 V ±20V 5708 pF @ 25 V - 203W (Ta) -55°C ~ 175°C (TJ) Through Hole
PSMN8R5-100ESQ

PSMN8R5-100ESQ

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.
975 -

RFQ

PSMN8R5-100ESQ

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tj) 10V 8.5mOhm @ 25A, 10V 4V @ 1mA 111 nC @ 10 V ±20V 5512 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK954R4-40B127

BUK954R4-40B127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,000 -

RFQ

BUK954R4-40B127

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 64 nC @ 5 V ±15V 7124 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN8R5-108ES

PSMN8R5-108ES

N-CHANNEL POWER MOSFET

NXP USA Inc.
466 -

RFQ

PSMN8R5-108ES

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK754R0-55B,127

BUK754R0-55B,127

PFET, 75A I(D), 55V, 0.004OHM, 1

NXP USA Inc.
960 -

RFQ

BUK754R0-55B,127

Технические

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 86 nC @ 10 V ±20V 6776 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PH2230DLS115

PH2230DLS115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK7510-100B,127

BUK7510-100B,127

PFET, 75A I(D), 100V, 0.01OHM, 1

NXP USA Inc.
1,139 -

RFQ

BUK7510-100B,127

Технические

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 80 nC @ 10 V ±20V 6773 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK953R5-60E,127

BUK953R5-60E,127

MOSFET N-CH 60V 120A TO220AB

NXP USA Inc.
2,400 -

RFQ

BUK953R5-60E,127

Технические

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Ta) - 3.4mOhm @ 25A, 10V 2.1V @ 1mA 95 nC @ 5 V ±10V 13490 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK6E2R0-30C127

BUK6E2R0-30C127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,728 -

RFQ

BUK6E2R0-30C127

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK751R8-40E127

BUK751R8-40E127

N-CHANNEL POWER MOSFET

NXP USA Inc.
784 -

RFQ

BUK751R8-40E127

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 11340 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK9515-100A127

BUK9515-100A127

N-CHANNEL POWER MOSFET

NXP USA Inc.
8,000 -

RFQ

BUK9515-100A127

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14.4mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN7R8-120ESQ

PSMN7R8-120ESQ

POWER FIELD-EFFECT TRANSISTOR, 7

NXP USA Inc.
430 -

RFQ

PSMN7R8-120ESQ

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 70A (Tc) 10V 7.9mOhm @ 25A, 10V 4V @ 1mA 167 nC @ 10 V ±20V 9473 pF @ 60 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7510-55AL127

BUK7510-55AL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,769 -

RFQ

BUK7510-55AL127

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 10mOhm @ 25A, 10V 4V @ 1mA 124 nC @ 10 V ±20V 6280 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK753R8-80E,127

BUK753R8-80E,127

TRANSISTOR >30MHZ

NXP USA Inc.
1,749 -

RFQ

BUK753R8-80E,127

Технические

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 169 nC @ 10 V ±20V 12030 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN3R3-80ES,127

PSMN3R3-80ES,127

ELEMENT, NCHANNEL, SILICON, MOSF

NXP USA Inc.
1,415 -

RFQ

PSMN3R3-80ES,127

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 25A, 10V 4V @ 1mA 139 nC @ 10 V ±20V 9961 pF @ 40 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7C06-40AITE,118

BUK7C06-40AITE,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
3,200 -

RFQ

BUK7C06-40AITE,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 1mA 120 nC @ 10 V ±20V 4300 pF @ 25 V Current Sensing 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN1R9-40PL127

PSMN1R9-40PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,255 -

RFQ

PSMN1R9-40PL127

Технические

Bulk * Active - - - - - - - - - - - - - -
PMPB29XNE,115

PMPB29XNE,115

MOSFET N-CH 30V 5A DFN2020MD-6

NXP USA Inc.
8,996 -

RFQ

PMPB29XNE,115

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 1.8V, 4.5V 33mOhm @ 5A, 4.5V 900mV @ 250µA 18.6 nC @ 4.5 V ±12V 1150 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHB20N06T,118

PHB20N06T,118

MOSFET N-CH 55V 20.3A D2PAK

NXP USA Inc.
5,428 -

RFQ

PHB20N06T,118

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA 11 nC @ 10 V ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB18NQ10T,118

PHB18NQ10T,118

MOSFET N-CH 100V 18A D2PAK

NXP USA Inc.
1,966 -

RFQ

PHB18NQ10T,118

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 1mA 21 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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