Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PSMN3R5-80PS

PSMN3R5-80PS

NOW NEXPERIA PSMN3R5-80PS - POWE

NXP USA Inc.
2,311 -

RFQ

PSMN3R5-80PS

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK9Y65-100E,115

BUK9Y65-100E,115

TRANSISTOR >30MHZ

NXP USA Inc.
3,500 -

RFQ

BUK9Y65-100E,115

Технические

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 5V 63.3mOhm @ 5A, 10V 2.1V @ 1mA 14 nC @ 5 V ±10V 1523 pF @ 25 V - 64W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN021-100YLX

PSMN021-100YLX

PSMN021-100YL - N-CHANNEL 100V

NXP USA Inc.
2,686 -

RFQ

PSMN021-100YLX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 49A (Tc) 5V, 10V 21.5mOhm @ 15A, 10V 2.1V @ 1mA 65.6 nC @ 10 V ±20V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ)
PMDPB70XPE

PMDPB70XPE

NOW NEXPERIA PMDPB70XPE - SMALL

NXP USA Inc.
3,826 -

RFQ

PMDPB70XPE

Технические

Bulk * Active - - - - - - - - - - - - - -
BUK6C3R3-75C,118

BUK6C3R3-75C,118

MOSFET N-CH 75V 181A D2PAK

NXP USA Inc.
2,092 -

RFQ

BUK6C3R3-75C,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 181A (Tc) 10V 3.4mOhm @ 90A, 10V 2.8V @ 1mA 253 nC @ 10 V ±16V 15800 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN014-80YLX

PSMN014-80YLX

PSMN014-80YL - N-CHANNEL 80V, 14

NXP USA Inc.
3,978 -

RFQ

PSMN014-80YLX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 62A (Tc) 5V, 10V 14mOhm @ 15A, 10V 2.1V @ 1mA 28.9 nC @ 5 V ±20V 4640 pF @ 25 V - 147W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R1-40PLQ

PSMN2R1-40PLQ

MOSFET N-CH 40V 150A TO220AB

NXP USA Inc.
2,939 -

RFQ

PSMN2R1-40PLQ

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 2.2mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±20V 9584 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN004-60B,118

PSMN004-60B,118

MOSFET N-CH 60V 75A D2PAK

NXP USA Inc.
2,184 -

RFQ

PSMN004-60B,118

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 1mA 168 nC @ 10 V ±20V 8300 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y29-40EX

BUK7Y29-40EX

MOSFET N-CH 40V 26A LFPAK56

NXP USA Inc.
3,466 -

RFQ

BUK7Y29-40EX

Технические

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 26A (Tc) 10V 29mOhm @ 5A, 10V 4V @ 1mA 7.9 nC @ 10 V ±20V 492 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7Y28-75B,115

BUK7Y28-75B,115

TRANSISTOR >30MHZ

NXP USA Inc.
3,386 -

RFQ

BUK7Y28-75B,115

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 35.5A (Tc) 10V 28mOhm @ 15A, 10V 4V @ 1mA 21.2 nC @ 10 V ±20V 1417 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NX138BKR

NX138BKR

NX138BK - 60 V, SINGLE N-CHANNEL

NXP USA Inc.
3,879 -

RFQ

NX138BKR

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 265mA (Ta) 2.5V, 10V 3.5Ohm @ 200mA, 10V 1.5V @ 250µA 0.49 nC @ 4.5 V ±20V 20.2 pF @ 30 V - 310mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN025-80YLX

PSMN025-80YLX

PSMN025-80YL - N-CHANNEL 80V, LO

NXP USA Inc.
2,421 -

RFQ

PSMN025-80YLX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 37A (Tc) 5V, 10V 25mOhm @ 10A, 10V 2.1V @ 1mA 17.1 nC @ 5 V ±20V 2703 pF @ 25 V - 95W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMPB48EP,115

PMPB48EP,115

MOSFET P-CH 30V 4.7A DFN2020MD-6

NXP USA Inc.
2,065 -

RFQ

PMPB48EP,115

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 50mOhm @ 4.7A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 860 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB13XNE,115

PMPB13XNE,115

MOSFET N-CH 30V 8A DFN2020MD-6

NXP USA Inc.
3,916 -

RFQ

PMPB13XNE,115

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 1.8V, 4.5V 16mOhm @ 8A, 4.5V 900mV @ 250µA 36 nC @ 4.5 V ±12V 2195 pF @ 15 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7Y7R2-60EX

BUK7Y7R2-60EX

MOSFET N-CH 60V LFPAK56

NXP USA Inc.
3,023 -

RFQ

BUK7Y7R2-60EX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V - 10V - - - ±20V - - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK662R7-55C

BUK662R7-55C

NOW NEXPERIA BUK662R7-55C - POWE

NXP USA Inc.
3,710 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK9Y104-100B,115

BUK9Y104-100B,115

TRANSISTOR >30MHZ

NXP USA Inc.
3,166 -

RFQ

BUK9Y104-100B,115

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 14.8A (Tc) 5V, 10V 99mOhm @ 5A, 10V 2.15V @ 1mA 11 nC @ 5 V ±15V 1139 pF @ 25 V - 59W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK768R1-100E,118

BUK768R1-100E,118

NOW NEXPERIA BUK768R1-100E - 100

NXP USA Inc.
2,966 -

RFQ

BUK768R1-100E,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 8.1mOhm @ 25A, 10V 4V @ 1mA 108 nC @ 10 V ±20V 7380 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9615-100E,118

BUK9615-100E,118

MOSFET N-CH 100V 66A D2PAK

NXP USA Inc.
3,312 -

RFQ

BUK9615-100E,118

Технические

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 66A (Tc) 5V, 10V 14mOhm @ 15A, 10V 2.1V @ 1mA 60 nC @ 5 V ±10V 6813 pF @ 25 V - 182W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMCPB5530X

PMCPB5530X

NOW NEXPERIA PMCPB5530X - SMALL

NXP USA Inc.
2,210 -

RFQ

PMCPB5530X

Технические

Bulk * Active - - - - - - - - - - - - - -
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1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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