Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF6N40CF

FQPF6N40CF

MOSFET N-CH 400V 6A TO220F

Fairchild Semiconductor
1,300 -

RFQ

FQPF6N40CF

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP32N12V2

FQP32N12V2

MOSFET N-CH 120V 32A TO220-3

Fairchild Semiconductor
1,244 -

RFQ

FQP32N12V2

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 120 V 32A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1860 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU8580

FDU8580

MOSFET N-CH 20V 35A IPAK

Fairchild Semiconductor
7,200 -

RFQ

FDU8580

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 9mOhm @ 35A, 10V 2.5V @ 250µA 27 nC @ 10 V ±20V 1445 pF @ 10 V - 49.5W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75637P3

HUFA75637P3

MOSFET N-CH 100V 44A TO220-3

Fairchild Semiconductor
1,472 -

RFQ

HUFA75637P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 10V 30mOhm @ 44A, 10V 4V @ 250µA 108 nC @ 20 V ±20V 1700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQD630TM

FQD630TM

MOSFET N-CH 200V 7A DPAK

Fairchild Semiconductor
9,850 -

RFQ

FQD630TM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 3.5A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 550 pF @ 25 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD068AN03L

FDD068AN03L

MOSFET N-CH 30V 17A/35A TO252AA

Fairchild Semiconductor
8,203 -

RFQ

FDD068AN03L

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMB506P

FDMB506P

MOSFET P-CH 20V 6.8A 8MLP

Fairchild Semiconductor
5,268 -

RFQ

FDMB506P

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 1.8V, 4.5V 30mOhm @ 6.8A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 2960 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQB9N25CTM

FQB9N25CTM

MOSFET N-CH 250V 8.8A D2PAK

Fairchild Semiconductor
3,222 -

RFQ

FQB9N25CTM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDU068AN03L

FDU068AN03L

MOSFET N-CH 30V 17A/35A IPAK

Fairchild Semiconductor
2,514 -

RFQ

FDU068AN03L

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 60 nC @ 10 V ±20V 2525 pF @ 15 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75329D3

HUF75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor
1,792 -

RFQ

HUF75329D3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI6N50TU

FQI6N50TU

MOSFET N-CH 500V 5.5A I2PAK

Fairchild Semiconductor
1,650 -

RFQ

FQI6N50TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.5A (Tc) 10V 1.3Ohm @ 2.8A, 10V 5V @ 250µA 22 nC @ 10 V ±30V 790 pF @ 25 V - 3.13W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB3N60CTM

FQB3N60CTM

MOSFET N-CH 600V 3A D2PAK

Fairchild Semiconductor
1,376 -

RFQ

FQB3N60CTM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3A (Tc) 10V 3.4Ohm @ 1.5A, 10V 4V @ 250µA 14 nC @ 10 V ±30V 565 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP44N08

FQP44N08

MOSFET N-CH 80V 44A TO220-3

Fairchild Semiconductor
1,147 -

RFQ

FQP44N08

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 44A (Tc) 10V 34mOhm @ 22A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 127W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76639P3

HUFA76639P3

MOSFET N-CH 100V 51A TO220-3

Fairchild Semiconductor
973 -

RFQ

HUFA76639P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI15P12TU

FQI15P12TU

MOSFET P-CH 120V 15A I2PAK

Fairchild Semiconductor
901 -

RFQ

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 120 V 15A (Tc) 10V 200mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 3.75W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
SFP9530

SFP9530

MOSFET P-CH 100V 10.5A TO220-3

Fairchild Semiconductor
762 -

RFQ

SFP9530

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) - 300mOhm @ 5.3A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1035 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD6690S

FDD6690S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,500 -

RFQ

FDD6690S

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) 10V 16mOhm @ 10A, 10V 3V @ 1mA 24 nC @ 10 V ±20V 2010 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF19N20T

FQPF19N20T

11.8A, 200V, 0.15OHM, N CHANNEL

Fairchild Semiconductor
2,000 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 11.8A (Tc) 10V 150mOhm @ 5.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCU5N60TU

FCU5N60TU

4.6A, 600V, 0.95OHM, N-CHANNEL

Fairchild Semiconductor
1,688 -

RFQ

FCU5N60TU

Технические

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.6A (Tc) 10V 950mOhm @ 2.3A, 10V 5V @ 250µA 16 nC @ 10 V ±30V 600 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ)
FQU8N25TU

FQU8N25TU

MOSFET N-CH 250V 6.2A IPAK

Fairchild Semiconductor
5,629 -

RFQ

FQU8N25TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 6.2A (Tc) 10V 550mOhm @ 3.1A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 530 pF @ 25 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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