Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75344P3_NL

HUF75344P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
312 -

RFQ

HUF75344P3_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA76437S3ST

HUFA76437S3ST

MOSFET N-CH 60V 71A D2PAK

Fairchild Semiconductor
9,600 -

RFQ

HUFA76437S3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI9N25CTU

FQI9N25CTU

MOSFET N-CH 250V 8.8A I2PAK

Fairchild Semiconductor
2,000 -

RFQ

FQI9N25CTU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.8A (Tc) 10V 430mOhm @ 4.4A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 710 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP70N08

FQP70N08

MOSFET N-CH 80V 70A TO220-3

Fairchild Semiconductor
797 -

RFQ

FQP70N08

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA5N90

FQA5N90

MOSFET N-CH 900V 5.8A TO3P

Fairchild Semiconductor
523 -

RFQ

FQA5N90

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Tc) 10V 2.3Ohm @ 2.9A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1550 pF @ 25 V - 185W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75842S3ST

HUF75842S3ST

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor
3,809 -

RFQ

HUF75842S3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75639S3_NL

HUF75639S3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
655 -

RFQ

HUF75639S3_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF46N15

FQPF46N15

MOSFET N-CH 150V 25.6A TO220F

Fairchild Semiconductor
6,151 -

RFQ

FQPF46N15

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 25.6A (Tc) 10V 42mOhm @ 12.8A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 66W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA6N70

FQA6N70

MOSFET N-CH 700V 6.4A TO3P

Fairchild Semiconductor
4,865 -

RFQ

FQA6N70

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 700 V 6.4A (Tc) 10V 1.5Ohm @ 3.2A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1400 pF @ 25 V - 152W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF34N20L

FQPF34N20L

MOSFET N-CH 200V 17.5A TO220F

Fairchild Semiconductor
764 -

RFQ

FQPF34N20L

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17.5A (Tc) 5V, 10V 75mOhm @ 8.75A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76437P3

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,200 -

RFQ

HUF76437P3

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75339P3

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
2,440 -

RFQ

HUFA75339P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB70N08TM

FQB70N08TM

MOSFET N-CH 80V 70A D2PAK

Fairchild Semiconductor
1,180 -

RFQ

FQB70N08TM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 70A (Tc) 10V 17mOhm @ 35A, 10V 4V @ 250µA 98 nC @ 10 V ±25V 2700 pF @ 25 V - 3.75W (Ta), 155W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDI9406_F085

FDI9406_F085

110A, 40V, 0.0022OHM, N-CHANNEL

Fairchild Semiconductor
400 -

RFQ

FDI9406_F085

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 2.2mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 7710 pF @ 25 V - 176W (Tj) -55°C ~ 175°C (TJ) Through Hole
FQP12N60

FQP12N60

MOSFET N-CH 600V 10.5A TO220-3

Fairchild Semiconductor
9,664 -

RFQ

FQP12N60

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF13N50

FQPF13N50

MOSFET N-CH 500V 12.5A TO220F

Fairchild Semiconductor
2,475 -

RFQ

FQPF13N50

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12.5A (Tc) 10V 430mOhm @ 6.25A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2300 pF @ 25 V - 56W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF6N90

FQAF6N90

MOSFET N-CH 900V 4.5A TO3PF

Fairchild Semiconductor
1,785 -

RFQ

FQAF6N90

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 4.5A (Tc) 10V 1.9Ohm @ 2.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1880 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF27N25

FQAF27N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,440 -

RFQ

FQAF27N25

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 19A (Tc) 10V 110mOhm @ 9.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDU6688

FDU6688

MOSFET N-CH 30V 84A IPAK

Fairchild Semiconductor
8,025 -

RFQ

FDU6688

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Through Hole
FQB12N60TM

FQB12N60TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
6,990 -

RFQ

FQB12N60TM

Технические

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 10.5A (Tc) 10V 700mOhm @ 5.3A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1900 pF @ 25 V - 3.13W (Ta), 180W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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